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    Text: Preliminary Datasheet H5N2522FP-E0-E 250V - 12A - MOS FET High Speed Power Switching R07DS0862EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


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    PDF H5N2522FP-E0-E R07DS0862EJ0100 PRSS0003AG-A O-220FP)