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    MMBFJ202

    Abstract: MBF5459 bf245b PN4303 MMBFJ201
    Text: bflE ]> • JF E T General Purpose continued H h501130 0 0 3 ^ 6 NATL SEMICOND bTO * N S C S (DISCRETE) N Channel Vp % I b Device BVoss (V) M in (V) M in M ax m (mmho) CIss Crss (PF) (PF) M ax M ax M in M ax en @ F re q Package M ax (Hz) 2N3684 50 2 5


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    PDF h501130 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MBF5457 MMBFJ202 MBF5459 bf245b MMBFJ201

    NDP705A

    Abstract: NDP706A NDP705B NDP706B
    Text: fV t^ h d r 1QQ1 Semiconductor National NDP705A/NDP705B, NDP706A/NDP706B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


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    PDF NDP705A/NDP705B, NDP706A/NDP706B 272-9S59 h501130 NDP705A NDP706A NDP705B NDP706B