H11F Search Results

Contextual Info: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET

TRANSISTOR R46

Abstract: H11F1
Contextual Info: H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 DESCRIPTION The H11F_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The

H11F1

Abstract: H11F3 H11F2
Contextual Info: Optoelectronics Products Bilateral Analog FET Output; DC Sensing Input RDS Ω VBR(V) I46(nA) tON/tOFF(µs) ON Max OFF Min Min Max Max VISOACRMS (kV) 1 minute H11F1 200 300M 30 50 25/25 5.3 H11F2 330 300M 30 50 25/25 5.3 H11F3 470 300M 15 50 25/25 5.3 Part Number

Contextual Info: Product Specifications H11FB-302 3­1/8 in EIA Female Flange with gas barrier for 4 in HJ11­50 air dielectric cable CHARACTERISTICS General Specifications Interface 3­1/8 in EIA Female Flange Body Style Straight Brand

HJ1150

Abstract: HJ11-50
Contextual Info: Product Specifications H11FB-302 3­1/8 in EIA Female Flange with gas barrier for 4 in HJ11­50 air dielectric cable CHARACTERISTICS General Specifications Interface 3­1/8 in EIA Female Flange Body Style Straight Brand

Contextual Info: Product Specifications H11FB-M408 4­1/2 in IEC Female Flange with gas barrier for 4 in HJ11­50 air dielectric cable CHARACTERISTICS General Specifications Interface 4­1/2 in IEC Female Flange Body Style Straight Brand

Contextual Info: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H l l F fam ily consists o f a g allium -alum inum -arsenide in frared em itting d io d e co u pled to a sym m etrical bilateral silicon p h o to d etecto r.

H11F1

Abstract: H11F3 E91231 H11F H11F2 H11F1X R46Note
Contextual Info: H11F1X, H11F2X, H11F3X H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form DESCRIPTION The H11F_ series are optically coupled isolators

H11F1

Abstract: H11F3 data sheet book h11f1 sample E91231 H11F H11F2 TRANSISTOR R46
Contextual Info: H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 DESCRIPTION The H11F_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The

LM 8105

Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
Contextual Info: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17

H11F2 equivalent

Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
Contextual Info: PHOTO FET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 PACKAGE DIMENSIONS f l DESCRIPTION The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated

H11f1 variable resistor 500k

Abstract: H11F1 300 H11F1300W h11f1 application H11F1
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11F3

Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

Contextual Info: Product Specifications H11FB- M408 4­1/2 in IEC Female Flange with gas barrier for 4 in HJ11­50B air dielectric cable CHARACTERISTICS General Specifications Interface Body Style Gas Barrier Mounting Angle 4­1/2 in IEC Female Flange

H11f1 variable resistor 500k

Abstract: H11F1 variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F2 H11F 5v 10mA reed relay data sheet book h11f1 pin
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11F1

Abstract: H11f1 variable resistor 500k H74A1 H11F H11F2 H11F3 bv46
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11F1 HARRIS

Contextual Info: 38 75 081 G E S O L I D ST A T E 01E 19728 Optoelectronic Specifications_ HA RR IS S E M I C O N D S E C T O R 37E D H11F1, H11F2, I 4 3 Ü2 27 1 O G S T n O IHAS b H11F3 Photon Coupled Bilateral Analog FET The GE Solid State H11F family consists of a gallium arsenide infrared emitting

Contextual Info: Product Specifications H11FB- 302 3­1/8 in EIA Female Flange with gas barrier for 4 in HJ11­50B air dielectric cable CHARACTERISTICS General Specifications Interface Body Style Gas Barrier Mounting Angle 3­1/8 in EIA Female Flange

ST206D

Abstract: H11F H11F1 15v reed relay low cost H11F2 H11F3
Contextual Info: Eü PHOTO FET OPTOCOUPLERS OPTO E L E C T R O N I C S H11F1 H11F2 H11F3 PACKAGE DIMENSIONS DESCRIPTION The H11F series has a gallium-alumirtum-arsenide infrared emitting diode coupled to a symmetrica! bilateral silicon photodetector. The detector is electrically isolated

elliptical waveguide

Abstract: H11FB-M408 HJ11-50 HJ1150
Contextual Info: Product Specifications H11FB-M408 4­1/2 in IEC Female Flange with gas barrier for 4 in HJ11­50 air dielectric cable CHARACTERISTICS General Specifications Interface 4­1/2 in IEC Female Flange Body Style Straight Brand

Contextual Info: Product Specifications H11FP-M408 4­1/2 in IEC Female Flange without gas barrier for 4 in HJ11­50 air dielectric cable CHARACTERISTICS General Specifications Interface 4­1/2 in IEC Female Flange Body Style Straight

Contextual Info: Product Specifications H11FP- M408 4­1/2 in IEC Female Flange without gas barrier for 4 in HJ11­50B air dielectric cable CHARACTERISTICS General Specifications Interface Body Style Gas Barrier Mounting Angle 4­1/2 in IEC Female Flange

Contextual Info: 5 6 4 APPROVED: D A T E :_ TITLE: - 1.270 [ 32 . 25 ] - <£. Si I I H I l|H II H I ^ B -p FI 11H I I^H11FLL JiLulL 12 11 1 iù y 1 SPECIFICATIONS: Material: Insulator: PBT, glass reinforced, rated UL 94V— 0 Insulator color: Black Shield: Brass, Nickel plated

Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical