Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    H02N60S Search Results

    H02N60S Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H02N60S Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60SE Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60SF Hi-Sincerity Mocroelectronics N-channel High Voltage MOSFET Original PDF
    H02N60SI Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60SJ Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF

    H02N60S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET MARK y2

    Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
    Text: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab


    Original     		PDF MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749