H A 431 TRANSISTOR Search Results

2-7D101A

Abstract: 2SA1431
Contextual Info: TOSHIBA 2SA1431 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hjrjr; Linearity : h p E ( l ) = 100-320 ( V c e = - 2 V , I c = -0 .5 A )

2N3442

Abstract: E271 2n4347
Contextual Info: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment

LM431ACM3

Abstract: LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43
Contextual Info: & Semiconductor LM 431 A d ju s ta b le Precision Z e n e r S h u n t R e g u la to r Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range ot operation. The output voltage may be set at any

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

h a 431 transistor

Abstract: LH 431 IC 431 1N3913 431 transistors
Contextual Info: CÂ \X y . Series PTC 430, PTC 431 , V- /? % - High Voltage NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators

Transistor PJ 431

Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

TFK u 116

Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
Contextual Info: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW

Philips diode tFR

Abstract: BY328 BY-328
Contextual Info: SLE ]> PHILIPS INTERNATIONAL 711DÔ2b 0040441 bbT • PHIN BY328 SbE D T -O t ' 1 7 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television

transistor c 6073

Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
Contextual Info: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005

h a 431 transistor

Abstract: transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t
Contextual Info: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity

transistor 431t

Abstract: h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet a 431 transistor TRANSISTOR 431 431D 431 transistor
Contextual Info: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity

BO241C

Abstract: BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135
Contextual Info: N PN Power transistors « Epitaxial Base » L F amplifier and switching » Transistors de puissance « Base épitaxiée » Amplification et commutation B F Type Compì. Case Boîtier Ptot W VcEO (V) *C (A) *21 E max min / 'C 1 (A) Tease 25 0 C iiC V c E sa t

MGF4919

Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A

sot-23 MARKING CODE 431

Abstract: h a 431 transistor sot 23 marking code 431 839 transistor transistor c 839 transistor marking code 431 431 marking code sot marking 431 sot-23 a 431 transistor transistor w 431
Contextual Info: Central" CMPTA27 Semiconductor Corp. SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA27 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

2SC2673

Abstract: 2SC4040 2sa881
Contextual Info: / I ransistors Is "7 2SC 2673 2S C 4040 2SC2673/2SC4040 Power Amp. Epitaxial Planar NPN Silicon Transistors • W Fi \fi± |H /D im en sio n s Unit : mm 1) Pc =600m W 2) VCE(sat)=150m V Typ (at Ic / I b = 500mA/50mA) ¿r iS l'o 3) 2SA881 /2SA15601 =l > Z f') „

smd transistor 2T

Abstract: transistor smd code marking 431 transistor 431 smd transistor smd marking 431 K TRANSISTOR SMD MARKING CODE 2t transistor smd marking 431 SMD TRANSISTOR MARKING 2T smd transistor A1 sot-23 TRANSISTOR SMD MARKING CODE 2.T 431 SMD SOT-23 CODE MARKING
Contextual Info: LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized package 4-Bump micro SMD using National’s micro SMD package technology. The output voltage may be set at any level

2SC2673

Abstract: 2sa881 HM431
Contextual Info: ROHM CO LTD 40E D 7ÖSäcn ci QGÜS7ST 7 BRHil //Transistors 2SC2673/2SC4040 T - 2 7 - iÇ - — 2 S C 2 3 7 3 2 S v 4 v 4 0 v '^ > h 7 > y 7 ^ 4 ,tt^JiH lIiffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistors 1ftffivfi& Ej/Pim ensions Unit : mm

transistor buv 90

Abstract: BUV18
Contextual Info: rz7 Ä 7# SCS-THOMSON BUV18 BUV19 NPN HIGH CURRENT SWITCHING TRANSISTORS • HIGH EFFICIENCY SW ITCHING ■ VERY LOW SATURATION VOLTAGE AT 40A ■ FAST TURN-OFF AND TURN-ON T O -3 D E S C R IP T IO N High current, high speed transistors suited for low voltage applications : high efficiency converters,

BF451

Abstract: BF450 transistor BF451 Bp451
Contextual Info: N AMER PHILIPS/DISCRETE b'ÏE D 1^53^31 □G E 7 b tì4 STS J BF450 BF451 HF SILICON PLANAR EPITAXIALTRANSISTORS PNP transistors in a plastic envelope intended fo r HF and IF applications in radio receivers, especially fo r m ixer stages in AM receivers and IF stages in AM /FM receivers w ith negative earth.

Contextual Info: bbS3T31 0033530 b88 Philips Semiconductors APX Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N AnER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL MAX. UNIT drain-source voltage

IRF 3302

Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
Contextual Info: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited

ESM5045D

Contextual Info: N AMER P H IL IP S /D IS C R E T E b'lE ]> bbS3T31 0D2flb0b 053 H A P X ESM5045D V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives,