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    GW60H65DFB Search Results

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    GW60H65DFB Price and Stock

    STMicroelectronics STGW60H65DFB-4

    IGBT
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    DigiKey STGW60H65DFB-4 Tube 596 1
    • 1 $7.46
    • 10 $5.054
    • 100 $7.46
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    Avnet Americas STGW60H65DFB-4 Tray 600
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    Mouser Electronics STGW60H65DFB-4
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    Newark STGW60H65DFB-4 Bulk 30 1
    • 1 $4.87
    • 10 $4.87
    • 100 $4.87
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    TME STGW60H65DFB-4 1
    • 1 $6.5
    • 10 $5.42
    • 100 $5.17
    • 1000 $4.49
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    Avnet Silica STGW60H65DFB-4 540 17 Weeks 30
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    EBV Elektronik STGW60H65DFB-4 21 Weeks 30
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    STMicroelectronics STGW60H65DFB

    IGBT TRENCH FS 650V 80A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STGW60H65DFB Tube 548 1
    • 1 $5.41
    • 10 $5.41
    • 100 $3.04533
    • 1000 $2.14145
    • 10000 $2.0365
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    Avnet Americas STGW60H65DFB Tube 15 Weeks 600
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    • 1000 $2.11796
    • 10000 $1.99577
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    Mouser Electronics STGW60H65DFB 672
    • 1 $5.1
    • 10 $5.1
    • 100 $2.47
    • 1000 $2.03
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    Newark STGW60H65DFB Bulk 320 1
    • 1 $4.3
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    STMicroelectronics STGW60H65DFB 672 1
    • 1 $5
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    TME STGW60H65DFB 166 1
    • 1 $5.35
    • 10 $4.46
    • 100 $4.25
    • 1000 $3.69
    • 10000 $3.18
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    Avnet Silica STGW60H65DFB 60 16 Weeks 30
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    EBV Elektronik STGW60H65DFB 16 Weeks 30
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    Win Source Electronics STGW60H65DFB 4,200
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    • 100 $2.9308
    • 1000 $2.6276
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    GW60H65DFB Datasheets Context Search

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    GW60H65DFB

    Abstract: No abstract text available
    Text: GW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB

    Untitled

    Abstract: No abstract text available
    Text: GW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365

    GW60H65DFB

    Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1
    Text: GW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original     		PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB GWT60H65DFB fieldstop igbt GW60 AM01507v1

    Untitled

    Abstract: No abstract text available
    Text: GW60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365