GUNN EFFECT Search Results

AN5205

Abstract: Gunn Diode at power supply circuit gunn diode radar gunn diodes Gunn Diode gunn diode oscillator diode gunn gunn diode radar module radar gunn diode AN5205-2
Contextual Info: AN5205 AC2001 - 77 GHz Gunn Oscillator Module Application Note AN5205-2.0 July 1999 Electric field breakdown of a Gunn diode is related to the 'nl' product of the device doping level multiplied by the active length . The Gunn diode used in the AC2001 is normally operated at about 5 to 7V, whereas voltage

10GHz oscillator

Abstract: CXY13D CXY13E gunn effect
Contextual Info: GUNN EFFECT DEVICES CXYI3D CXYI3E TENTATIVE DATA Gallium arsenide bulk effect devices employing the Gunn effect to produce CW oscillations at microwave frequencies. Each device is encapsulated in a varactor type pill package suitable for mounting in various types of

diode b34

Abstract: Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator
Contextual Info: NEW JAPAN RA D I O CO LTD MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POW ER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw or pulsed mode osillators. These Gunn diodes utilizing the bulk negative resistance effect can be easily obtained microwave

Gunn Diode

Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
Contextual Info: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property

gunn diode generator

Contextual Info: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.

gunn diodes

Abstract: gunn 4411 gunn diode 10.5 ghz
Contextual Info: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw

CXY11C

Abstract: gunn effect gunn diode 10.5 ghz CXY11a Gunn Diode CXY11B CXY11 10 GHz gunn diode Mullard CXY11B cxyiia
Contextual Info: GUNN EFFECT DEVICES CXYIIA CXYIIB CXYMC T E N T A T IV E D A T A G allium a rsen id e bulk effect devices em ploying the Gunn effect to produce CW oscillatio n s at m icrow ave fre q u e n c ie s. Each device is encapsulated in a v a ra c to r type p ill package suitable for m ounting in v a rio u s types of cavity.

gunn diode datasheet

Abstract: gunn diodes gunn diode marconi Marconi gunn Gunn Diode marcon DC1251F DC1251G DC1251H DC1251J
Contextual Info: High Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 40 GHz * Low cost * High reliability * Custom devices available Minimum Typical Typical operating operating Frequency output band power voltage current Outline

gunn diode datasheet

Abstract: MARCONI DC1201C Gunn Diode DC1201A marcon DC1203B DC1201E gunn diode marconi DC1203A DC1203C
Contextual Info: Low Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 26 GHz * Low cost * Low operating current * Custom devices available Minimum Typical Typical operating Frequency output operating band power voltage current

gunn effect

Abstract: Mullard
Contextual Info: 803CXY/A 803CXY/B 803CXY/C G U N N EFFECT DEVICE Dev. Nos. DEVELOPMENT SAMPLE DATA Gallium arsenide bulk effect devices employing the Gunn effect to produce CW oscillations at microwave frequencies. Each device is encapsulated in a varactor type pill package suitable for mounting in various types of cavity.

ML4911

Contextual Info: M L 4000 SERIES MEDIUM AND HIGH POWER CW GUNN DIODES The ML 4900 Series o f G unn diodes is designed to operate using the bulk negative resistive effect and features low fm and am noise characteristics while accom plishing a one-step conversion from dc to microwave energy using a single

GUNN DIODE plessey

Abstract: plessey 10 Gunn oscillator plessey 10 GHz Gunn oscillator DC1230 DC1252 DC1280 Gunn Diode DC1281F
Contextual Info: 37bfl522 GDIÖS'm b3b « P L S B Si GEC PLESSEY S E M I C O N D U C T O R S DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The DC1250 Series are gallium arsenide bulk effect devices for the generation of CW microwave power in the range 4GHz to18GHz depending on the cavity and diodes

GUNN DIODE

Abstract: 10 GHz gunn diode gunn diodes Diode jx4 NJX4404 X-Band Motion Detector Gunn Diode e band gunn diode oscillator gunn effect diode case
Contextual Info: ne:id JAPAN RADI O M5E D CO LTD WM b5bclfla3 0001180 ObS « N J R C MEDIUM POW ER GUNN DIODES p R C l — I ii " " P O I-M N J X400 2 4403 4404 • Description NJX4402, 4403, 4404 are medium power G unn diodes designed for in X -band cw oscillators. These G unn diodes util­

Contextual Info: P ^p i GEC P L E S S E Y DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The D C 1250 S eries are gallium arsenide bulk effect d e vice s fo r the g e nera tion of C W m icrow ave po w e r in the range 4 G H z to 1 8 G H z d e pend ing on the cavity and diodes

Contextual Info: LORAL m C R O ü J A VE-FS I SIE D • S S aD 13 a O D D D 4 t ä 44b "T - 0-7 -1 1 HIGH POWER POSITIVE BIAS PLATED HEATSINK GUNN DIODES DESCRIPTION APPLICATIONS T he FSI S e m ico n d u cto r Plated H eatsin k d io d e chip consists o f a silver h eat sink chem ically b o n d e d t o th e b u lk se m ico n d u ctor

gunn diodes

Abstract: VSA-9210 gunn diode varian x-band gunn diode n34 zener diagram of gunn diode Gunn diode x band gunn diode gunn diode x band radar yig oscillator 002
Contextual Info: FEATURES • LOW FM AND AM NOISE • LOW VOLTAGE OPERATION • OPERATION TO 60 GHz • HIGH RELIA BILITY DESCRIPTION V a ria n G unn-effect diodes a re g a lliu m -arsen id e d ev ices fo r con verting low -voltage d -c pow er d ire c tly to m icrow ave frequency pow er. They

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

gunn diode x band amplifier

Abstract: RS-8960 gunn diode x band radar X-band doppler radar module 308-017 rs gunn diode radar module RS8960 Gunn Diode at power supply circuit microwave intruder alarm diagram of gunn diode
Contextual Info: E/F3598 Issued July 1985 Doppler module Stocknumber 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave

MA87937

Abstract: 10 GHz gunn diode Gunn oscillator GaAs x band gunn diode
Contextual Info: Varactor Controlled Oscillator 21.15 - 23.63 GHz MA87937 V3.00 Features ● ● ● ● ● ● 0.670 MOLEX 22-01-3027 0.335 Broadband Electronic Tuning Allows for Center Frequency Setting to Done Electronically, Alleviating the Need for “On Site” Mechanical Adjustments.

X-band doppler radar module

Abstract: RS-8960 308-017 rs metal detector using 555 timer diagram of gunn diode Gunn Diode at power supply circuit 747 opamp gunn diode radar gunn diode radar module gunn diode x band amplifier
Contextual Info: Issued March 1997 232-2324 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.

10 GHz gunn diode

Abstract: backward diode "backward diode" CXY19 impatt diode x band gunn diode gunn effect Gunn Diode AEY17 Gunn Diode diode gunn SA
Contextual Info: Microwave solid state backward diodes book 1 part 8 a> c Type No. Description _« 1 £ 3 O o*1 s Frequency Range GHz Typical Tangential Sensitivity Idbm) Min. Figure of Merit Typical Video Impedance (O) A E Y 17 Germanium bonded backward diode for use at X band

RS-8960

Abstract: diagram of gunn diode RS Microwave Company 747 opamp X-band doppler radar module metal detector using 555 timer gunn diode radar module radar gunn diode 308-017 rs s band doppler mixer
Contextual Info: Issued July 1985 003-598 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.

Microwave oscillator

Abstract: microwave
Contextual Info: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description

FMCW

Contextual Info: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 60 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description