GTO THYRISTOR 4500V 4000A Search Results

GTO thyristor 4500V 4000A

Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
Contextual Info: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA

power IGBT MOSFET transistor GTO SCR di

Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
Contextual Info: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power

GTO thyristor

Abstract: GTO thyristor 4500V 4000A reverse-conducting thyristor MITSUBISHI GATE TURN-OFF THYRISTOR gto 4500v diode 4000v mitsubishi package coding THYRISTOR GTO gto mitsubishi GTO thyristor datasheet
Contextual Info: MITSUBISHI HIGH POWER SEMICONDUCTORS ORDERING INFORMATION ORDERING INFORMATION Mitsubishi semiconductors may be ordered using the following simplified alphanumeric codes which define the major ratings and specifications of the products. FG 4000 C X 90 D A

schematic thyristor based inverter

Abstract: HIGH VOLTAGE DIODE 6kv Thyristor 6kV GTO MODULE mitsubishi inverter fr schematic power GCT Thyristor 6kV 500a gct thyristor GTO thyristor 4500V 4000A DIODE 6kv
Contextual Info: A 6KV/5KA REVERSE CONDUCTING GCT Y. Yamaguchi*, K. Oota*, K. Kurachi*, F. Tokunoh*, H. Yamaguchi*, H. Iwamoto*, J. Donlon*, E. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan

toshiba gto

Abstract: SGR3000GXH28 GTO thyristor 4500V 4000A GTO 100A 500V 4500V 900A 100a 1000v GTO GTO 10A 500V
Contextual Info: TOSHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • • • • • • • Repetitive Peak Off-State Voltage VDRM —4500V Note 1 R.M.S On-State Current lT ( R M S ) = 1200A(Tf=77°C)

Contextual Info: T O S H IB A SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 INVERTER APPLICATION • Unit in mm Repetitive Peak Off-State Voltage Vd r m = 4500V Note 1 R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C) R.M.S Reverse Current

Contextual Info: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1)

40A GTO thyristor

Abstract: GTO thyristor 4500V 4000A G4000EC450 GTO thyristor GTO thyristor datasheet THYRISTOR GTO FT40
Contextual Info: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1)

toshiba gto

Abstract: GTO 100A 500V gto 100A GTO thyristor SGR3000GXH26 300a 1500v thyristor 300a 1000v thyristor 100a 1000v GTO GTO thyristor 4500V 4000A
Contextual Info: TOSHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM —4500V Note 1 R.M.S On-State Current It (RMS)= 1200A (Tf = 77°C) R.M.S Reverse Current I r (RMS) —900A (Tf = 77°C)

toshiba gto

Abstract: sgr3000gxh26
Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR SGR3000GXH26 T n C U ID A • w w ■I I TECHNICAL DATA REVERSE CONDUCTING TYPE SGR3000GXH26 INVERTER APPLICATION U n it in mm 2-03,5+0.2 • R ep etitive Peak Off-State Voltage : Vd • R .M .S On-State C u rren t

DSF21545SV

Contextual Info: DSF21545SV DSF21545SV Fast Recovery Diode DS4153- JXO\ LN31805

DG858BW

Abstract: GTO thyristor 4500V 4000A 200a gto preliminary AN4506 AN4839 AN4853 DSF21545SV DSF21545SV45
Contextual Info: DSF21545SV DSF21545SV Fast Recovery Diode Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter

SGRB000GXH26

Abstract: 4500V 900A GTO thyristor 4500V 4000A
Contextual Info: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)

sgr3000gxh28

Abstract: 4500V 900A
Contextual Info: TO SHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • Repetitive Peak Off-State Voltage : VDRM“ 4500V Note 1 • R.M.S On-State Current : lT(RMS) = 1200A(Tf=77°C) • R.M.S Reverse Current ; I r (RMS) —900A (Tf=77°C)

DG858BW45

Abstract: DG858BW
Contextual Info: DG858BW45 DG858BW45 Gate Turn-off Thyristor DS4096-5 July 2014 LN31733 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability ● Fault Protection Without Fuses

AN4506

Abstract: AN4839 DG858BW45 GTO thyristor 10A
Contextual Info: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT AV dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ●

GTO thyristor 4500V 4000A

Abstract: DS4303-1 AN4506 AN4839 AN4853 DF685
Contextual Info: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability