DG858BW Search Results

Contextual Info: @ M ITEL DG858BW45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4096 - 2.1 DS4096 - 2.2 APPLICATIONS March 1998 KEY PARAMETERS • Variable speed A.C. motor drive inverters VSD-AC . 'tc m 3 °°°A ■ Uninterruptable Power Supplies

Contextual Info: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.

AN4506

Abstract: AN4839 DG858BW45 GTO thyristor 10A
Contextual Info: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT AV dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ●

Contextual Info: MARCH 1995 DG858BW45 DS4096-2.1 DG858BW45 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A 1000V/µs dVD/dt diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies ■ High Voltage Converters.

Contextual Info: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.

DG858BW45

Contextual Info: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●

Contextual Info: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●

DG858BW45

Abstract: DG858BW
Contextual Info: DG858BW45 DG858BW45 Gate Turn-off Thyristor DS4096-5 July 2014 LN31733 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability ● Fault Protection Without Fuses

DG858BW45

Contextual Info: M ITEL DG858BW45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4096 - 2.1 DS4096 - 2.2 March 1998 KEY PARAMETERS APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . 't c m 3° ° ° A ■ Uninterruptabie Power Supplies

DSF21545SV

Abstract: DSF21545SV45
Contextual Info: DSF21545SV DSF21545SV Fast Recovery Diode Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter

Contextual Info: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●

Contextual Info: JANUARY 1996 DSF21545SV DS4153-3.0 DSF21545SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.

Contextual Info: GEC PLESSEY w . S E M I C O N D U C T O R S DS4096-2.2 DG858BW45 GATE TURN-OFF THYRISTOR KEY PARAMETERS 4000A 3000A V 4500V DRM 1180A 1000V/HS W jd t dl/dt 300A/|is APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . ■ Uninterruptable Power Supplies

DG858BW

Abstract: 300a 1000v thyristor Gate Turn-Off Thyristors DG858BW45
Contextual Info: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●

DG858BW

Abstract: GTO thyristor 4500V 4000A 200a gto preliminary AN4506 AN4839 AN4853 DSF21545SV DSF21545SV45
Contextual Info: DSF21545SV DSF21545SV Fast Recovery Diode Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter

AN4839

Abstract: RC5327230 Honeywell v3
Contextual Info: GDU 90 20722 GDU 90-20722 Gate Drive Unit Replaces March 1998 version, DS4568-3.1 DS4568-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON

AN4839

Contextual Info: GDU 90-20721 GDU 90-20721 Gate Drive Unit Replaces March 1998 version, DS4567-3.1 DS4567-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DYNEx

Abstract: DG306AE
Contextual Info: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500

SG600EX21

Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
Contextual Info: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

Contextual Info: GDUJULY 90 20722 1996 DS4568 - 2.0 GDU 90 20722 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching

DCR370T

Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches

DCR2950W

Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half