GTO 600V Search Results

GT1482

Abstract: NCL capacitor GT1635 GT1812 GT1635 norfolk capacitors g-t1636 NCL capacitor GT1807 GT1636 GT1508
Contextual Info: Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page GTO Protection Capacitors ~ tables Next Page 1800V - 2000V - 2500V - 2600V - 3300V - 3600V - 4000V - 4500V - 6000V - 7200V

Contextual Info: INTRODUCTION Toshiba is one of the world leader in high power semiconductors, today. Since 1972, we have been making great efforts on developing and producing high power GTOs. The first production type of high power GTO was 600V/200A. Since then, the ratings and characteristics of GTO, such as switching perform­

GTO catalogue

Abstract: SG1000EX23 toshiba gto
Contextual Info: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,

Igbt wafer

Abstract: dynex 600V 100A THYRISTORS IGBT 6500v
Contextual Info: introduction Dynex Semiconductor in Lincoln has 40 years experience in power electronics rectifier diodes, fast turn-off thyristors, GTO thyristors and custom heatsink power assemblies. Dynex Semiconductor is one of the foremost suppliers of pow er se m ic o n d u c to r

power IGBT MOSFET transistor GTO SCR di

Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
Contextual Info: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power

fairchild Igbts

Abstract: PCG3N60C3W
Contextual Info: PCG3N60C3W PRELIMINARY 6A, 600V, UFS Series N-Channel IGBTs January 2002 Features Symbol C • 6A, 600V at TC = 25oC • 600V Switching SOA Capability G Formerly developmental type TA49113. E Electrical Specifications TC = 25oC, Unless Otherwise Specified

Contextual Info: PCG3N60C3W PRELIMINARY 6A, 600V, UFS Series N-Channel IGBTs December 1997 Features Symbol C • 6A, 600V at TC = 25oC • 600V Switching SOA Capability G Formerly developmental type TA49113. E Electrical Specifications TC = 25oC, Unless Otherwise Specified

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DCR2950W

Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DCR2950W

Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Contextual Info: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

SSS7N60B

Abstract: SSS7N60B equivalent SSP7N60B 28A-600
Contextual Info: SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

FFPF10UP60S

Contextual Info: FFPF10UP60S Features • Ultrafast with soft recovery @ IF = 1A , < 40ns • Reverse Voltage, 600V • Forward Voltage (@ TC = 60°C), < 2V • Enhanced Avalanche Energy TO-220F-2L Applications • • • • 1 2 General purpose Switching mode power supply

Contextual Info: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

RURG3040CC

Abstract: RURG3060CC
Contextual Info: RURG3040CC, RURG3060CC Data Sheet Title UR 040 , RG 60C bt A, 0V 0V rafa Dual odes utho rpoon, minctor, ache ergy ted, itch wer pes, wer itch File Number 3549.3 30A, 400V - 600V Ultrafast Dual Diodes Features RURG3040CC and RURG3060CC are ultrafast dual diodes

RURP3060

Contextual Info: RURP3060 Data Sheet January 2002 30A, 600V Ultrafast Diode Features The RURP3060 is an ultrafast diode trr < 55ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

FFPF04S60S

Abstract: FFPF04S60STU
Contextual Info: STEALTH II Rectifier FFPF04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFPF04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

TO-218AC Package

Abstract: MUR3040PT MUR3060PT RURH1540C RURH1540CC RURH1560C RURH1560CC
Contextual Info: MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC Data Sheet January 2000 File Number 2774.4 15A, 400V - 600V Ultrafast Dual Diodes Features MUR3040PT, RURH1540CC, MUR3060PT, and RURH1560CC are ultrafast dual diodes trr < 55ns with soft recovery characteristics. They have a low forward

Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: STEALTH II Rectifier FFP15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 35ns @ IF = 15A • High Reverse Voltage and High Reliability The FFP15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: FFP08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching rrt =45ns(Max. @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated The FFP08H60S is hyperfast2 rectifier (trr=45ns(Max.) @

RURU10060

Contextual Info: RURU10060 Data Sheet January 2000 File Number 3546.3 100A, 600V Ultrafast Diode Features The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial