GTO 5000 V Search Results

FG600AH

Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
Contextual Info: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 Sept. 07 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1

Contextual Info: V RRM I F AV I F(RMS I FSM V F0 rF = = = = = = 5000 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V m 5SDD 33L5500 Doc. No. 5SYA1168-00 Aug 10 • Patented free-floating silicon technology  Very low on-state losses  Optimum power handling capability

Contextual Info: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1)

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

5sya2020

Abstract: 5SDD40H4000
Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1

thyristor lifetime

Contextual Info: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link

abb phase control thyristors

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 4275 A = 6715 A = 60x103 A = 0.95 V = 0.13 mΩ Phase Control Thyristor 5STP 38Q4200 Doc. No. 5SYA1051-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

diode vrrm 8000 if 7000

Abstract: 5SDD31H6000
Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3246 5099 40x103 0.894 0.166 Rectifier Diode V A A A V mΩ 5SDD 31H6000 Doc. No. 5SYA1183-02 May 09 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values 1) Parameter

5SDD31H6000

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

gto 2400 capacitor

Abstract: PTC 8750 B25856-K1405-K003 KA 1400 capacitor 2200 uF siemens gto 2400 B25856K2104K003
Contextual Info: Capacitors for Power Electronics Series/Type: B25856 The following products presented in this data sheet are being withdrawn. Ordering Code B25856K2155K003 B25856K2104K003 B25856K3505K003 B25856K3105K003 B25856K3504K003 B25856K3204K003 B25856K7305K003 B25856K7155K003

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 25H2501 Doc. No. 5SYA1206-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode

IEC61071

Abstract: gto 2400 capacitor
Contextual Info: APPLICATION • LOW-MEDIUM VOLTAGE DRIVES  GTO SNUBBER  GCT SNUBBER        CHARACTERISTICS LOW ESR LOW INDUCTANCE EXCELLENT VIBRATION HANDLING HIGH AC VOLTAGE CAPABILITY HIGH DV/DT MINIMAL CORONA PARTIAL DISCHARGE EFFECTS IEC61071 COMPLIANT

DG648BH45

Contextual Info: DG648BH45 DG648BH45 Gate Turn-off Thyristor DS4093-4 July 2014 LN31736 APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 4500V 745A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies

abb phase control thyristors

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 3960 A = 6230 A = 60x103 A = 0.95 V = 0.13 mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA1012-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

4n33 4n25

Abstract: MOC1005 MOC1200 transistor collector diode protection MOC100 Optical Couplers protection couplers 4N25 4N27 4N28
Contextual Info: Optical Couplers/Isolators Couplers are designed to provide isolation protection fro m high-voltage transients, surge voltage or low level noise th a t w ould otherwise damage the inp u t or generate erroneous inform ation. They allow interfacing systems o f d iffe ren t logic levels, d iffe ren t grounds, etc., th a t w ould otherwise be incom patible.

RC snubber diode

Abstract: DC009 100a 1000v GTO
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 281 S 60 T ø3,5+0,1 deepth = 4±0,2 on both sides C A 4. August 1998 D 281 S 60 T Vorläufige Daten Preliminary Data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties

Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

1419

Abstract: capacitor abb
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24x103 2.2 0.6 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: KSD1589 NPN SILICON DARLINGTON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO-220F • Complement to KSB1098 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC

A881B

Abstract: 4500v
Contextual Info: A881B 77mm Fast Recovery DIODE 4500V / 1950Arms The A881B fast recovery diode is designed as parallel mate for 3000A IT Q M GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge