Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
|
Original
|
38H5000
5SYA1177-00
CH-5600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 Sept. 07 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
|
Original
|
40H4000
5SYA1176-00
CH-5600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V RRM I F AV I F(RMS I FSM V F0 rF = = = = = = 5000 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V m 5SDD 33L5500 Doc. No. 5SYA1168-00 Aug 10 • Patented free-floating silicon technology Very low on-state losses Optimum power handling capability
|
Original
|
33L5500
5SYA1168-00
CH-5600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1)
|
Original
|
G4000EC450
G4000EC450
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
|
Original
|
48H3200
5SYA1182-00
CH-5600
|
PDF
|
5sya2020
Abstract: 5SDD40H4000
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
|
Original
|
40H4000
5SYA1176-01
CH-5600
5sya2020
5SDD40H4000
|
PDF
|
thyristor lifetime
Abstract: No abstract text available
Text: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.
|
Original
|
703-996-8200x105.
DE-FG0207ER84712,
thyristor lifetime
|
PDF
|
14h45
Abstract: Abb diode 14H4505 a3700 5sdf14h4505
Text: Key Parameters VRRM = 4500 IFAVM = 1400 IFRMS = 2200 IFSM = 25 VF0 = 1.20 rF = 0.32 VDClink = 2200 V A A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 July 98 •Patented free-floating silicon technology •Low on-state and switching losses
|
Original
|
14H4505
CH-5600
14h45
Abb diode
14H4505
a3700
5sdf14h4505
|
PDF
|
gto 2400 capacitor
Abstract: Siemens matsushita capacitor B25855C1305K004 ISO 4035 B25855-C7106-K004 B25855C3105 B25855C3155K004 siemens CAPACITOR 40/085/56 B25855C8106K004 B25855C8205K004
Text: MKV AC Capacitors GTO Snubbering and Clamping B 25 855 High rate of voltage rise High peak-current capability Extremely low inductance Construction ● ● ● ● ● ● ● ● Self-healing Plastic dielectric Oil-impregnated tubular windings no PCB Metal-sprayed end faces ensure reliable
|
Original
|
B25855-C2255-K004
gto 2400 capacitor
Siemens matsushita capacitor
B25855C1305K004
ISO 4035
B25855-C7106-K004
B25855C3105
B25855C3155K004
siemens CAPACITOR 40/085/56
B25855C8106K004
B25855C8205K004
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link
|
Original
|
14H4505
5SYA1110-02
CH-5600
|
PDF
|
abb phase control thyristors
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 4275 A = 6715 A = 60x103 A = 0.95 V = 0.13 mΩ Phase Control Thyristor 5STP 38Q4200 Doc. No. 5SYA1051-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
|
Original
|
38Q4200
5SYA1051-02
38Q4200
CH-5600
abb phase control thyristors
|
PDF
|
diode vrrm 8000 if 7000
Abstract: 5SDD31H6000
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3246 5099 40x103 0.894 0.166 Rectifier Diode V A A A V mΩ 5SDD 31H6000 Doc. No. 5SYA1183-02 May 09 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values 1) Parameter
|
Original
|
31H6000
5SYA1183-02
CH-5600
diode vrrm 8000 if 7000
5SDD31H6000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static
|
Original
|
40L4502
40L4502
CH-5600
|
PDF
|
5SDD31H6000
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
|
Original
|
31H6000
5SYA1183-00
CH-5600
5SDD31H6000
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 25H2501 Doc. No. 5SYA1206-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode
|
Original
|
25H2501
5SYA1206-01
CH-5600
|
PDF
|
press pack thyristor 10000 VDRM
Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
|
Original
|
40L4501
5SYA1208-02
CH-5600
press pack thyristor 10000 VDRM
LS 7313 S
5SGA40L4501
LS 7313 - S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 2.10 rT = 0.58 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
|
Original
|
40L4501
CH-5600
|
PDF
|
PTC 8750
Abstract: B25856-K1405-K003 B25856-K7255-K003 gto 2400 capacitor B25856K0155K003 B25856-K4105-K003 B25856-K3104-K003 B25856K2405K003 VDE0560 B25856K0205K003
Text: MKV AC Capacitors GTO Snubbering and Clamping B 25 856 High dielectric strength High peak-current capability Extremely low inductance Construction Self-healing Plastic dielectric Oil-impregnated tubular windings no PCB Metal-sprayed end faces ensure reliable
|
Original
|
|
PDF
|
25H2501
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA1206-01 Dec. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
|
Original
|
25H2501
5SYA1206-01
CH-5600
25H2501
|
PDF
|
20H2501
Abstract: 5sga20h2501
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode
|
Original
|
20H2501
5SYA1205-01
CH-5600
20H2501
5sga20h2501
|
PDF
|
FG600AH
Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
Text: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC
|
OCR Scan
|
00D1A53
80ation
MAX/10
FG600AH
FG1800AH
FG600AV
FG1000AL
FG1000A
fg2000av
FG1000AH
|
PDF
|
7,5 kw mitsubishi inverter
Abstract: gto 100A 100A GTO GTO peak reverse test mitsubishi ODC20 GTO switching test mitsubishi
Text: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FG R3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Voltage class Parameter Symbol Unit 90DA Repetitive peak off-state voltage*
|
OCR Scan
|
R3000FX-90DA
7,5 kw mitsubishi inverter
gto 100A
100A GTO
GTO peak reverse test mitsubishi
ODC20
GTO switching test mitsubishi
|
PDF
|
GTO switching test
Abstract: 100A GTO gto mitsubishi GTO peak reverse test mitsubishi FGR3000FX-90DA GTO switching test mitsubishi dv 700 inverter M1037 GTO 5000 V mitsubishi gto
Text: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FGR3000FX-90DA • Itq rm Repetitive controllable on-state current. 3 0 0 0 A • lT AV A v e ra g e o n -s ta te c u r r e n t . 7 8 0 A
|
OCR Scan
|
R3000FX-90
FGR3000FX-90DA
GTO switching test
100A GTO
gto mitsubishi
GTO peak reverse test mitsubishi
FGR3000FX-90DA
GTO switching test mitsubishi
dv 700 inverter
M1037
GTO 5000 V
mitsubishi gto
|
PDF
|
GTO ABB
Abstract: ABB GTO abb drives YS55010 YSG14-01 YSG14-21 YSG35-01 YSG35-21 YSG6-01 ABB thyristors
Text: A B B DRIVES A B B 'w iit o « ; - :- — - •-■— - 24E D ■ — t- 7 — - . - . - .- —- - DDlbflSS ODDG □ o .- -
|
OCR Scan
|
YSG6-01
550101-XX
YSG14-01
570101-XX
YSG35-01
580101-XX
YS550102-XX
YSG14-21
YS570102-XX
YSG35-21
GTO ABB
ABB GTO
abb drives
YS55010
YSG14-21
YSG35-21
ABB thyristors
|
PDF
|
