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    Toshiba America Electronic Components GT60M322(Q)

    60A, 950V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components GT60M322(Q) 47
    • 1 $19.5
    • 10 $19.5
    • 100 $18.75
    • 1000 $18.75
    • 10000 $18.75
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    GT60M Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT60M101 Toshiba Discrete IGBTs Original PDF
    GT60M101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT60M102 Toshiba Discrete IGBTs Original PDF
    GT60M102 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT60M102 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT60M103 Toshiba Discrete IGBTs Original PDF
    GT60M103 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT60M104 Toshiba Discrete IGBTs Original PDF
    GT60M104 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT60M104 Toshiba TRANS IGBT CHIP N-CH 900V 60A 3(2-21F2C) Scan PDF
    GT60M104 Toshiba Insulated Gate Bipolar Transistor Silicon N-Channel IGBT Scan PDF
    GT60M104 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) Scan PDF
    GT60M301 Toshiba Discrete IGBTs Original PDF
    GT60M301 Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    GT60M301 Toshiba N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) Scan PDF
    GT60M301 Toshiba TRANS IGBT CHIP N-CH 900V 60A 3(2-21F2C) Scan PDF
    GT60M302 Toshiba Discrete IGBTs Original PDF
    GT60M302 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel MOS Type Scan PDF
    GT60M302 Toshiba N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) Scan PDF
    GT60M303 Toshiba Discrete IGBTs Original PDF

    GT60M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GT60M101

    Abstract: No abstract text available
    Text: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0


    OCR Scan     		GT60M101 --15V GT60M101 PDF

    GT60M303

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.


    OCR Scan     		GT60M303 25//s GT60M303 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL MOS TYPE GT60M301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq BT tf=0.25/¿s Typ.


    OCR Scan     		GT60M301 PDF

    GT60M302

    Abstract: P channel 600v 20a IGBT
    Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.22/¿s TYP. FRD trr —0.7/¿s (TYP.)


    OCR Scan     		GT60M302 GT60M302 P channel 600v 20a IGBT PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD


    OCR Scan     		GT60M303 25//s PDF

    GT60M323

    Abstract: No abstract text available
    Text: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60M323 GT60M323 PDF

    GT60M303

    Abstract: GT60M303 application GT60M303 circuit
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		GT60M303 GT60M303 GT60M303 application GT60M303 circuit PDF

    GT60M301

    Abstract: 20A igbt
    Text: TOSHIBA GT60M301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N C HANNEL M O S TYPE GT60M301 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. • • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode H igh sp eed IGBT : tf= 0.25/^s TYP.


    OCR Scan     		GT60M301 GT60M301 20A igbt PDF

    GT60M303 application

    Abstract: GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)


    Original     		GT60M303 GT60M303 application GT60M303 PDF

    GT60M303 application

    Abstract: GT60M303 circuit igbt failure rate
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.


    Original     		GT60M303 GT60M303 application GT60M303 circuit igbt failure rate PDF

    GT60M322

    Abstract: No abstract text available
    Text: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A)


    Original     		GT60M322 GT60M322 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT60M104 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4//s Max. Low Saturation Voltage : V q e (sat)~^-?V (Max.) Enhancement-Mode


    OCR Scan     		GT60M104 S5J12 PDF

    transistor fc 1013

    Abstract: No abstract text available
    Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS U nit in mm 03.3 + 0.2 20.5MM. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode •


    OCR Scan     		GT60M302 transistor fc 1013 PDF

    S5J12

    Abstract: IC60N gt60m104
    Text: SILICON N CHANNEL MOS TYPE GT60M104 U n i t in n m HIGH POWER SWITCHING APPLICATIONS. 0 3 .3 ± 0 .2 2 0 .5 MAX . H i g h Inp u t I m p e d a n c e . High Speed : tf=0.4us Max„ . Low Saturation Voltage : Vc£(s a t)*3.7V(Max.) • H ^ L «12 M ■ . Enhancement-Mode


    OCR Scan     		GT60M104 S5J12 S5J12 IC60N gt60m104 PDF

    GT60M323

    Abstract: No abstract text available
    Text: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60M323 120HIBA GT60M323 PDF

    GT60M323

    Abstract: No abstract text available
    Text: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed • • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector


    Original     		GT60M323 GT60M323 PDF

    GT60M303

    Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		GT60M303 GT60M303 GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303 PDF

    GT60M301

    Abstract: HEI100
    Text: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M301 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed :GBT tf= 0.25¿¿s Typ.


    OCR Scan     		GT60M301 GT60M301 HEI100 PDF

    GT60M322

    Abstract: No abstract text available
    Text: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • • • • • Unit: mm Enhancement mode type High speed : tf = 0.15 s typ. (IC = 60 A)


    Original     		GT60M322 GT60M322 PDF

    GT60M301

    Abstract: No abstract text available
    Text: TOSHIBA GT60M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT6QM3Q1 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.25,«s Typ.


    OCR Scan     		GT60M301 GT60M301 PDF

    VQE 22

    Abstract: sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • • The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq b T : tf=0.25/*s TYP.


    OCR Scan     		GT60M303 VQE 22 sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M PDF

    GT60M101

    Abstract: X10V
    Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE GT60M101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX . 0 3 .3 ± 0 .2 . High Input Impedance . High Speed : tf = 0. l\is Max. . Low Saturation Voltage : VCE(sat) • OV(Max.) . Enhancement-Mode


    OCR Scan     		GT60M101 GT60M101 X10V PDF

    GT8G101

    Abstract: 2BLC 27F2C 2-21F2C GT60M302
    Text: TOSHIBA GT60M302 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL M O S TYPE GT60M302 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm ¿0 .5 M A X. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode


    OCR Scan     		GT60M302 GT8G101 GT8G101 2BLC 27F2C 2-21F2C GT60M302 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • • • • • Unit: mm Enhancement mode type High speed : tf = 0.15 µs typ. (IC = 60 A)


    Original     		GT60M322 PDF