GT40T Search Results

GT40T Price and Stock

Filter by Manufacturer


ROHM Semiconductor RGT40TM65DGC9 IGBT TRNCH FLD 650V 17A TO220NFM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT40TM65DGC9	Tube	875		1,000	1 - 10 - 100 - 1000 $1.50077 10000 $1.50077	Buy Now
Avnet Americas	RGT40TM65DGC9	Tube			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	RGT40TM65DGC9		947			1 $4.13 10 $2.72 100 $1.92 1000 $1.46 10000 $1.45	Buy Now
Ameya Holding Limited	RGT40TM65DGC9		20		1	1 $2.9792 10 $2.5284 100 $2.1462 1000 $1.4602 10000 $1.4602	Buy Now
Avnet Silica	RGT40TM65DGC9			25 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip1Stop	RGT40TM65DGC9	Tube	50			1 $3.79 10 $2.5 100 $2.31 1000 $2.31 10000 $2.31	Buy Now
CoreStaff Co Ltd	RGT40TM65DGC9		50			1 $0.642 10 $0.624 100 $0.601 1000 $0.597 10000 $0.597	Buy Now
ROHM Semiconductor RGT40TS65DGC13 IGBT TRENCH FS 650V 40A TO247G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT40TS65DGC13	Tube	600		1	1 $10.03 10 $10.03 100 $5.933 1000 $4.61749 10000 $4.61749	Buy Now
Avnet Americas	RGT40TS65DGC13	Tube			600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	RGT40TS65DGC13		588			1 $7.56 10 $7.42 100 $4.81 1000 $4.61 10000 $4.5	Buy Now
Newark	RGT40TS65DGC13	Bulk	30		1	1 $6.31 10 $5.81 100 $4.8 1000 $4.8 10000 $4.8	Buy Now
TTI	RGT40TS65DGC13	Tube			600	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Ameya Holding Limited	RGT40TS65DGC13		30		1	1 $7.76 10 $7.02 100 $6.26 1000 $4.86 10000 $4.47	Buy Now
Chip1Stop	RGT40TS65DGC13	Tube	120			1 $5.82 10 $5.59 100 $4.14 1000 $4.14 10000 $4.14	Buy Now
CoreStaff Co Ltd	RGT40TS65DGC13		30			1 $7.358 10 $2.167 100 $1.647 1000 $1.609 10000 $1.609	Buy Now
ROHM Semiconductor RGT40TS65DGC11 IGBT 650V 40A 144W TO-247N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT40TS65DGC11	Tube	456		1	1 $3.96 10 $3.96 100 $2.17433 1000 $1.49159 10000 $1.335	Buy Now
Avnet Americas	RGT40TS65DGC11	Tube			450	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	RGT40TS65DGC11		473			1 $3.28 10 $2.5 100 $1.62 1000 $1.33 10000 $1.33	Buy Now
Ameya Holding Limited	RGT40TS65DGC11		40		1	1 $2.69457 10 $2.51493 100 $2.15566 1000 $1.79638 10000 $1.79638	Buy Now
Chip1Stop	RGT40TS65DGC11	Bulk	30			1 $2.62 10 $2 100 $2 1000 $2 10000 $2	Buy Now

CoreStaff Co Ltd	RGT40TS65DGC11		332			1 $0.928 10 $0.903 100 $0.869 1000 $0.863 10000 $0.863	Buy Now
Amphenol Industrial Operations GT40TF MIL-5015 GT/ACA-B BAYONET CAP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT40TF	Bag	7		1	1 $87.48 10 $71.318 100 $62.8876 1000 $62.8876 10000 $62.8876	Buy Now
Newark	GT40TF	Bulk			8	1 $125.28 10 $96.82 100 $67.76 1000 $65.96 10000 $65.96	Buy Now
RS	GT40TF	Bulk		19 Weeks	1	1 $83.85 10 $83.85 100 $83.85 1000 $83.85 10000 $83.85	Get Quote
Onlinecomponents.com	GT40TF					1 $81.14 10 $58.03 100 $36.28 1000 $34.86 10000 $34.86	Buy Now
Interstate Connecting Components	GT40TF					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol Industrial Operations GT40TV CAP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT40TV	Bulk			1	1 $110.25 10 $110.25 100 $110.25 1000 $110.25 10000 $110.25	Buy Now
Newark	GT40TV	Bulk			8	1 - 10 $84.23 100 $73.83 1000 $71.23 10000 $71.23	Buy Now
RS	GT40TV	Bulk		19 Weeks	1	1 $86.65 10 $86.65 100 $86.65 1000 $86.65 10000 $86.65	Get Quote
Onlinecomponents.com	GT40TV					1 $83.85 10 $59.97 100 $37.47 1000 $35.13 10000 $35.13	Buy Now
Interstate Connecting Components	GT40TV					1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more GT40T price and stock on Findchips.com

GT40T Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
GT40T101	Toshiba	Discrete IGBTs	Original	PDF
GT40T101	Toshiba	N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)	Original	PDF
GT40T101	Toshiba	Discrete IGBTs	Original	PDF
GT40T101	Toshiba	Insulated Gate Bipolar Transistor Silicon N Channel MOS Type	Scan	PDF
GT40T301	Toshiba	TRANS IGBT CHIP N-CH 1500V 40A 3(2-21F2C)	Original	PDF
GT40T301	Toshiba	Insulated Gate Bipolar Transistor Silicon N Channel IGBT	Original	PDF
GT40T301	Toshiba		Original	PDF
GT40T301	Toshiba	Discrete IGBTs	Original	PDF
GT40T301	Toshiba	Discrete IGBTs	Original	PDF
GT40T301(Q)	Toshiba	TRANS IGBT CHIP N-CH 1500V 40A 3(2-21F2C)	Original	PDF
GT40T321	Toshiba	GT40T321 - TRANSISTOR 40 A, 1500 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor	Original	PDF
GT40TF	Amphenol	Connector Accessories Clamp	Original	PDF

GT40T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l Enhancement−Mode l High Speed : tf = 0.4 µs Max. (IC = 40 A) l Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)	Original	PDF	GT40T101 2-21F2C
Parallel resonance inverter Abstract: TOSHIBA IGBT DATA BOOK GT40T301 GT40 Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	PDF	GT40T301 Parallel resonance inverter TOSHIBA IGBT DATA BOOK GT40T301 GT40
GT40T102 Abstract: No abstract text available Text: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)	Original	PDF	GT40T102 2-21F2C GT40T102
GT40T301 Abstract: No abstract text available Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 40 A)	Original	PDF	GT40T301 GT40T301
Parallel resonance inverter Abstract: GT40T302 Text: GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf = 0.23 s typ. (IC = 40 A)	Original	PDF	GT40T302 Parallel resonance inverter GT40T302
Untitled Abstract: No abstract text available Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed	Original	PDF	GT40T321
Untitled Abstract: No abstract text available Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	PDF	GT40T301 2-21F2C
40t321 Abstract: GT40T321 gt40t Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed	Original	PDF	GT40T321 40t321 GT40T321 gt40t
GT40T301 Abstract: No abstract text available Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	PDF	GT40T301 GT40T301
GT40T302 Abstract: IC401 Text: GT40T302 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT40T302 ○ 並列共振スイッチング用単位: mm • 高速ダイオードを内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。	Original	PDF	GT40T302 2-21F2C 20070701-JA GT40T302 IC401
GT40T301 Abstract: MMA 200 IGBT Parallel resonance inverter Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	PDF	GT40T301 GT40T301 MMA 200 IGBT Parallel resonance inverter
gt40t101 Abstract: bipolar power transistor data toshiba 2-21F2C Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement−Mode High Speed : tf = 0.4 µs Max. (IC = 40 A) Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)	Original	PDF	GT40T101 2-21F2C gt40t101 bipolar power transistor data toshiba 2-21F2C
40t321 Abstract: GT40T321 ic401 Text: GT40T321 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT40T321 ○ 民生用 ○ 電圧共振インバータスイッチング専用 ○ 第６世代単位: mm • 高速 FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。	Original	PDF	GT40T321 2-16C1C 40t321 GT40T321 ic401
Untitled Abstract: No abstract text available Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT40T301 High Power Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs)	Original	PDF	GT40T301

GT40T321 Abstract: No abstract text available Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed	Original	PDF	GT40T321 GT40T321
Untitled Abstract: No abstract text available Text: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)	Original	PDF	GT40T102 2-21F2C
Untitled Abstract: No abstract text available Text: GT40T101 HIGH POWER SWITCHING APPLICATIONS. U nit in mm 80.JMAX. • Enhancement-Mode • High Speed • Low Saturation : V c e sat = 5.0V (Max.) (Ic = 40A) h * J¡ : tf=0.4^is (Max.) (Iq = 40A) ¥ , = g j \| . 1 1.5 , i r 7 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	GT40T101 2-21F2C CHARACTERISTICST40T101
Untitled Abstract: No abstract text available Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)	OCR Scan	PDF	GT40T101
Untitled Abstract: No abstract text available Text: TOSHIBA GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 U nit in mm HIGH POWER SWITCHING APPLICATIONS. • • • Enhancement-Mode High Speed : tf=0.4//s Max. (Iq = 40A) Low Saturation : (sat) = 5-0V (Max.) (Iq = 40A)	OCR Scan	PDF	GT40T101 2-21F2C 75grm
Gt40t101 Abstract: TF010 Text: TOSHIBA GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 Unit in mm HIGH POWER SWITCHING APPLICATIONS. • • • Enhancement-Mode High Speed : tf = 0.4 jus Max. (Iq = 40 A) Low Saturation : VQ3 (sat) = 5.0 V (Max.) (l£ = 40 A)	OCR Scan	PDF	GT40T101 2-21F2C Gt40t101 TF010
Untitled Abstract: No abstract text available Text: TOSHIBA GT40T101 G T 4 Q T 1 01 TO SH IBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL M O S TYPE Unit in mm HIGH POW ER SW ITCHING APPLICATIONS. Enhancement-Mode High Speed : tf=0.4/is Max. (l£ = 40A) Low Saturation : (sat) = 5.0V (Max.) (Iq = 40A)	OCR Scan	PDF	GT40T101
Untitled Abstract: No abstract text available Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH PO W ER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)	OCR Scan	PDF	GT40T101 2-21F2C
Gt40t101 Abstract: 2-21F2C Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. • • • Enhancement-Mode High Speed : tf=0.4^s Max. (l£ = 40A) Low Saturation : ( s a t ) “ 5.0V (Max.) (l£ = 40A)	OCR Scan	PDF	GT40T101 Gt40t101 2-21F2C
S5J53 Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753 Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction	OCR Scan	PDF	200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

Privacy Settings

GT40T Search Results

GT40T Price and Stock

ROHM Semiconductor RGT40TM65DGC9

ROHM Semiconductor RGT40TS65DGC13

ROHM Semiconductor RGT40TS65DGC11

Amphenol Industrial Operations GT40TF

Amphenol Industrial Operations GT40TV

GT40T Datasheets (12)

GT40T Datasheets Context Search

Untitled

Parallel resonance inverter

GT40T102

GT40T301

Parallel resonance inverter

Untitled

Untitled

40t321

GT40T301

GT40T302

GT40T301

gt40t101

40t321

Untitled

GT40T321

Untitled

Untitled

Untitled

Untitled

Gt40t101

Untitled

Untitled

Gt40t101

S5J53