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    GT20D201 Search Results

    GT20D201 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT20D201 Unknown P-channel iso-gate bipolar transistor (MOS technology) Scan PDF
    GT20D201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT20D201 Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT Scan PDF
    GT20D201 Toshiba P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS) Scan PDF
    GT20D201O Toshiba Silicon P-Channel IGBT - High Power Amplifier Apps Scan PDF
    GT20D201Y Toshiba Silicon P-Channel IGBT - High Power Amplifier Apps Scan PDF

    GT20D201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    transistor d 4515

    Abstract: Transistor 4515 2-21F1C GT20D101
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201


    OCR Scan     		PDF GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101

    T20D201

    Abstract: gt20d201
    Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101


    OCR Scan     		PDF GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201

    Untitled

    Abstract: No abstract text available
    Text: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)


    OCR Scan     		PDF T0T72SG GT20D201 -250V GT20D101 0017SSB GT2QD201

    GT20D101

    Abstract: GT20D201 pc180
    Text: 45E D • TCH7250 0017ÔS1 TOSM T ■ TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR - GT20D201 SILICON P CHANNEL TYPE TOSHIBA D IS C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance I Yfe I =10S (TYP.)


    OCR Scan     		PDF TDT72S0 0017AS1 GT20D101 -250V GT20D201 T-39-31 GT20D101 GT20D201 pc180

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D201 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P C HANN EL TYPE GT2QD201 HIGH POWER AM PLIFIER APPLICATIO N • • • • High Breakdown Voltage : V q e S “ —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D10i


    OCR Scan     		PDF GT20D201 GT2QD201 --250V GT20D10i

    GT20D101

    Abstract: No abstract text available
    Text: SILICON N CHANNEL IGBT GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 20 5 MAX : Vc£g=250V MIN. # 3.3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode *\ - 2.5


    OCR Scan     		PDF GT20D101 GT20D201 100mA GT20D101

    IGBT gt20d201

    Abstract: No abstract text available
    Text: SILICON N CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage VCES=-250V MIN. . High Forward Transfer Admittance I Yfe I =10S (TYP.) 20.5M A X ¿ 3 .3 ± 0 .2 . Complementary to GT20D101 . Enhancement-Mode 2.5 3.0 + 2.5


    OCR Scan     		PDF GT20D201 GT20D101 -250V -250V, -100yA, -100mA IGBT gt20d201

    toshiba gt20d201

    Abstract: GT20D201
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL GT20D201 DATA SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH POWER AMPLIFIER APPLICATION. • • • • High Breakdown Voltage : VGEg = —250V (MIN.) High Forward Transfer Admittance : |Yfe| = 10S (TYP.)


    OCR Scan     		PDF GT20D201) GT20D201 --250V GT20D101 GT20D201 toshiba gt20d201

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    GT20D101

    Abstract: toshiba gt20d101 toshiba gt20d201 GT20D201 a 3050 c
    Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • 2 0.5 MAX. , & 3.3 ±0.2 High Breakdown Voltage : VCES~ —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.)


    OCR Scan     		PDF GT20D201 -250V GT20D101 GT20D101 toshiba gt20d101 toshiba gt20d201 GT20D201 a 3050 c

    IGBT gt20d201

    Abstract: p channel igbt GT20D201
    Text: GT20D201 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm 20.5M AX. • High Breakdown Voltage • High Forward Transfer Admittance : |Yfe| = 10S Typ. • Complementary to GT20D101


    OCR Scan     		PDF GT20D201 --250V GT20D101 IGBT gt20d201 p channel igbt GT20D201

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    Toshiba gt20d101

    Abstract: No abstract text available
    Text: 45E D • TCH7250 0017ÔS1 T ■ TOSHIBA IN S U LA T ED G ATE B IP O LA R T R A N S IS TO R TOS M - SILICO N P C H A N N E L T Y P E TOSHIBA GT20D201 DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance


    OCR Scan     		PDF GT20D101 -250V GT20D201 T-39-31 Toshiba gt20d101

    GT20D201

    Abstract: GT20D101 10S0V
    Text: TOSHIBA GT20D101 insulated Gate Bipolar Transistor Unit in mm Silicon N Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - v c e s = 2 5 0 V M in • High Forward Transfer Admittance - Yfs = 10S0VP-) • Complementary to GT20D201


    OCR Scan     		PDF GT20D101 10S0VP-) GT20D201 GT20D201 GT20D101 10S0V

    gt20d201

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE P T ^ n n ^ fM GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm [Si : VcES=~250V MIN. . Complementary to GT20D101 ) oin esi < <1 1 2.5 3.0 + 2.5 1.0-0.25 MAXIMUM RATINGS (Ta=25°C) 5 .4 5 ± 0 .1 5


    OCR Scan     		PDF GT20D201 GT20D101 gt20d201

    J3302

    Abstract: No abstract text available
    Text: GT20D201 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION • • • • High Breakdown Voltage : VCES= —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.)


    OCR Scan     		PDF GT20D201 --250V GT20D101 J3302

    t20d

    Abstract: GT20D201
    Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH POWER AM PLIFIER APPLICATION • H igh B reakdow n V o ltag e : V c E g = - 2 5 0 V Min. • H igh F orw ard T ran sfe r A d m ittan ce : |Yfe | = 1 0 S (T y p .)


    OCR Scan     		PDF GT20D201 t20d GT20D201

    TOSH18A

    Abstract: No abstract text available
    Text: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 HIGH POWER AM PLIFIER APPLICATION • • • • H igh Breakdown Voltage : V cE S —250V Min.; H igh Forward Transfer Adm ittance : |Yfe|= 10S(Typ. Complementary to GT20D201


    OCR Scan     		PDF GT20D101 --250V GT20D201 TOSH18A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION • • • • High Breakdown Voltage : VCES= —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D101


    OCR Scan     		PDF GT20D201 GT20D101

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe|= 10S(Typ.) Complementary to GT20D201


    OCR Scan     		PDF GT20D101 GT20D201

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    Mark Alexander A Current Feedback Audio Power Amp

    Abstract: npn transistor RCA 467 RCA 4136 Audio Power Amplifier MOSFET TOSHIBA SSM2131 cross reference DIM-100 Scans-0082255 SSM2131 Helitrim 2N5551 equivalent
    Text: AN-211 APPLICATION NOTE ANALOG ► DEVICES ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 The Alexander Current-Feedback Audio Power Amplifier* by Mark Alexander This application note was w ritten b y M ark Alexander,


    OCR Scan     		PDF AN-211 2SC2682; 2SC2238B. 2SA1142; 2SA968B. Mark Alexander A Current Feedback Audio Power Amp npn transistor RCA 467 RCA 4136 Audio Power Amplifier MOSFET TOSHIBA SSM2131 cross reference DIM-100 Scans-0082255 SSM2131 Helitrim 2N5551 equivalent