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    GT10 Price and Stock

    ROHM Semiconductor 2SC5876U3HZGT106Q

    TRANS NPN 60V 0.5A UMT3
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    DigiKey 2SC5876U3HZGT106Q Digi-Reel 18,755 1
    • 1 $0.65
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    2SC5876U3HZGT106Q Cut Tape 18,755 1
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    2SC5876U3HZGT106Q Reel 15,000 3,000
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    Avnet Silica 2SC5876U3HZGT106Q 16 Weeks 3,000
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    Chip One Stop 2SC5876U3HZGT106Q Cut Tape 800
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    CoreStaff Co Ltd 2SC5876U3HZGT106Q 822
    • 1 $0.671
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    • 100 $0.159
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    Hirose Electric Co Ltd GT10R-2022SCF

    CONN SOCKET CENTER TERMINAL CRIM
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    DigiKey GT10R-2022SCF Digi-Reel 5,709 1
    • 1 $0.48
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    • 100 $0.3192
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    GT10R-2022SCF Cut Tape 5,709 1
    • 1 $0.39
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    GT10R-2022SCF Reel 3,000 3,000
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    Mouser Electronics GT10R-2022SCF
    • 1 $0.39
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    • 100 $0.238
    • 1000 $0.21
    • 10000 $0.167
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    ROHM Semiconductor 2SA2088U3HZGT106Q

    TRANS PNP 60V 0.5A UMT3
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    DigiKey 2SA2088U3HZGT106Q Digi-Reel 3,457 1
    • 1 $0.8
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    2SA2088U3HZGT106Q Cut Tape 3,457 1
    • 1 $0.8
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    2SA2088U3HZGT106Q Reel 3,000 3,000
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    Avnet Silica 2SA2088U3HZGT106Q 16 Weeks 3,000
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    Chip One Stop 2SA2088U3HZGT106Q Cut Tape 550
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    CoreStaff Co Ltd 2SA2088U3HZGT106Q 3,656
    • 1 $0.699
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    • 100 $0.163
    • 1000 $0.111
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    2SA2088U3HZGT106Q 1,698
    • 1 $0.699
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    • 1000 $0.111
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    ROHM Semiconductor 2SCR544PHZGT100

    TRANS NPN 30V 2A SOT-89
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    DigiKey 2SCR544PHZGT100 Cut Tape 1,868 1
    • 1 $1.06
    • 10 $0.663
    • 100 $1.06
    • 1000 $0.3348
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    2SCR544PHZGT100 Digi-Reel 1,868 1
    • 1 $1.06
    • 10 $0.663
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    • 1000 $0.3348
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    Newark 2SCR544PHZGT100 Cut Tape 818 1
    • 1 $0.738
    • 10 $0.592
    • 100 $0.394
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    Ameya Holding Limited 2SCR544PHZGT100 850 1
    • 1 $0.90846
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    Avnet Silica 2SCR544PHZGT100 16 Weeks 1,000
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    Chip One Stop 2SCR544PHZGT100 Cut Tape 515
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    CoreStaff Co Ltd 2SCR544PHZGT100 890
    • 1 $1.23
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    • 100 $0.236
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    ROHM Semiconductor 2SAR502U3HZGT106

    TRANS PNP 30V 0.5A UMT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SAR502U3HZGT106 Digi-Reel 1,493 1
    • 1 $0.28
    • 10 $0.185
    • 100 $0.28
    • 1000 $0.0834
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    Newark 2SAR502U3HZGT106 Cut Tape 2,645 5
    • 1 $0.291
    • 10 $0.192
    • 100 $0.104
    • 1000 $0.086
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    TME 2SAR502U3HZGT106 1
    • 1 $0.1796
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    • 100 $0.0626
    • 1000 $0.0405
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    Avnet Silica 2SAR502U3HZGT106 16 Weeks 3,000
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    CoreStaff Co Ltd 2SAR502U3HZGT106 1,715
    • 1 $0.197
    • 10 $0.148
    • 100 $0.069
    • 1000 $0.039
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    Find more GT10 price and stock on Findchips.com

    GT10 Datasheets (191)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT-10 Greenlee Textron Equipment - Electrical Testers, Current Probes, Test and Measurement, CUBE POLARITY Original PDF
    GT-10 MCE / KDI ATTENUATOR, PIN DIODE Original PDF
    GT-100 GlobTek 100 Watts, Switchmode Power Supply, Single Output, Enclosed, Universal Input Original PDF
    GT100 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT1000-10000A-000 Stellar Technology Pressure Sensor: Transducer: 0 to 10000psi Range: Absolute Type Original PDF
    GT1000-10000G-000 Stellar Technology Pressure Sensor: Transducer: 0 to 10000psi Range: Sealed Gage Type Original PDF
    GT1000-1000A-000 Stellar Technology Pressure Sensor: Transducer: 0 to 1000psi Range: Absolute Type Original PDF
    GT1000-1000G-000 Stellar Technology Pressure Sensor: Transducer: 0 to 1000psi Range: Sealed Gage Type Original PDF
    GT1000-100A-000 Stellar Technology Pressure Sensor: Transducer: 0 to 100psi Range: Absolute Type Original PDF
    GT1000-10G-000 Stellar Technology Pressure Sensor: Transducer: 0 to 10psi Range: Sealed Gage Type Original PDF
    GT1000-15000A-000 Stellar Technology Pressure Sensor: Transducer: 0 to 15000psi Range: Absolute Type Original PDF
    GT1000-15000G-000 Stellar Technology Pressure Sensor: Transducer: 0 to 15000psi Range: Sealed Gage Type Original PDF
    GT1000-1500A-000 Stellar Technology Pressure Sensor: Transducer: 0 to 1500psi Range: Absolute Type Original PDF
    GT1000-15G-000 Stellar Technology Pressure Sensor: Transducer: 0 to 15psi Range: Sealed Gage Type Original PDF
    GT1000-1A-000 Stellar Technology Pressure Sensor: Transducer: 0 to 1psi Range: Absolute Type Original PDF
    GT1000-1G-000 Stellar Technology Pressure Sensor: Transducer: 0 to 1psi Range: Sealed Gage Type Original PDF
    GT1000-20000A-000 Stellar Technology Pressure Sensor: Transducer: 0 to 20000psi Range: Absolute Type Original PDF
    GT1000-20000G-000 Stellar Technology Pressure Sensor: Transducer: 0 to 20000psi Range: Sealed Gage Type Original PDF
    GT1000-2000G-000 Stellar Technology Pressure Sensor: Transducer: 0 to 2000psi Range: Sealed Gage Type Original PDF
    GT1000-200A-000 Stellar Technology Pressure Sensor: Transducer: 0 to 200psi Range: Absolute Type Original PDF
    ...

    GT10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)


    Original     		GT10J303 PDF

    stm 64 laser diode

    Abstract: 10 gb laser diode 32-PIN GT10-1005LD STM-64 laser driver, STM-64 GT10-100
    Text: GT10-1005LD GT10-1005LD SPECIFICATIONS PERFORMANCE CHARACTERISTICS in transmitter modules for fiber optic transmission systems such as SONET OC-192 PARAMETER SYMBOL and SDH STM-64. The laser driver IC has optional clocking enable, duty cycle control, output


    Original     		GT10-1005LD OC-192 STM-64. 750mW STM-64 10Gb/s 150mV stm 64 laser diode 10 gb laser diode 32-PIN GT10-1005LD STM-64 laser driver, STM-64 GT10-100 PDF

    KF1502-GT10A

    Abstract: KF50-HDA thermal printhead
    Text: KF1502-GT10A Printheads Compact low voltage thick film thermal printhead 6dots / mm KF1502-GT10A These compact, lightweight printheads have low power requirements and are intended for ECR and mobile applications. Drawing 7.2V, a maximum print speed of 2 inches per second is possible.


    Original     		KF1502-GT10A KF1502-GT10A KF50-HDA thermal printhead PDF

    MS33649-4

    Abstract: ms33649 ms3106 MS3106-14S-2S 17-4-PH GT1000
    Text: SERIES GT1000 0-5 Vdc PRESSURE TRANSDUCER Bonded Foil Strain Gage DESCRIPTION The STI Series GT1000 is a 0-5 Vdc output, reliable rugged pressure transducer, with a high frequency response, for measuring dynamic and static pressures. Available in absolute or sealed gage zero pressure reference, the major design feature is a fully cleanable pressure cavity. Other features of


    Original     		GT1000 GT1000 B920029 MS33649-4 ms33649 ms3106 MS3106-14S-2S 17-4-PH PDF

    2-10R1C

    Abstract: GT10J303 igbt 300V 10A
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)


    Original     		GT10J303 2-10R1C GT10J303 igbt 300V 10A PDF

    gt100

    Abstract: GT100NA120UX
    Text: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227


    Original     		GT100NA120UX OT-227 E78996 2002/95/EC OT-227 11-Mar-11 gt100 GT100NA120UX PDF

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		GT100DA120U OT-227 E78996 2002/95/EC 18-Jul-08 GT100DA120U PDF

    GT100DA60U

    Abstract: No abstract text available
    Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		GT100DA60U OT-227 2002/95/EC 18-Jul-08 GT100DA60U PDF

    igbt transistor

    Abstract: No abstract text available
    Text: GT100NA120U Vishay High Power Products "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 µs short circuit capability SOT-227 • Fully isolated package


    Original     		GT100NA120U OT-227 2002/95/EC OT-227 18-Jul-08 igbt transistor PDF

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U PDF

    VS-GT100TP120N

    Abstract: No abstract text available
    Text: VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES • Low VCE sat trench IGBT technology • 10 s short circuit capability • VCE(sat) with positive temperature coefficient • Maximum junction temperature 175 °C


    Original     		VS-GT100TP120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GT100TP120N PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C


    Original     		VS-GT100TP60N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    GT100NA120UX

    Abstract: No abstract text available
    Text: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227


    Original     		GT100NA120UX OT-227 E78996 2002/95/EC 11-Mar-11 GT100NA120UX PDF

    Untitled

    Abstract: No abstract text available
    Text: GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		GT10Q301 2-16C1C PDF

    10G131

    Abstract: No abstract text available
    Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		GT10G131 10G131 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.


    OCR Scan     		GT10J301 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE G T 1 0 J3 1 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd G eneration E n h anceme nt- Mode : tf= 0.30/iS M ax. H igh Speed Low S atu ratio n V oltage : V q e (s a t )= 2.7V (M ax.)


    OCR Scan     		GT10J311 30/iS PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT10G101 T O SH IB A IN SU LA T E D GATE BIPO LA R T R A N SIST O R SILICO N N -C H A N N E L IGBT G T 1 0 G 1 01 Unit in mm STRO BE FLASH A P PL IC A T IO N S • • • • High Input Impedance Low Saturation Voltage : VcE sat = 8V (Max.) (Iq = 130A)


    OCR Scan     		GT10G101 PDF

    GT10G102

    Abstract: gt106
    Text: SILICON N CHANNEL MOS TYPE GT10G102 STROBE FLASH APPLICATIONS Unit in mm 10±0.3 . High Input Impedance 0 3.2 ±0.2 2.7 ±0.2 . Low Saturation Voltage : VcE sat = 8V(Max.)(IC“ 130A) . Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		GT10G102 GT10G102 gt106 PDF

    GT10J301

    Abstract: h0320
    Text: TOSHIBA GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT G T 1 0J301 HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The 3rd Generation. Enhancement-Mode. High Speed. : tf^O.SO/^s Max. Low Saturation Voltage. : V c e ( s a t ) “ ^ . 7 V (Max.)


    OCR Scan     		GT10J301 GT10J301 h0320 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A GT10J301 GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1 5 .9 M A X The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max. Low Saturation Voltage. : V qe (sat) = 2-7V (Max.)


    OCR Scan     		GT10J301 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V q e (sat) = 2-7V (Max.)


    OCR Scan     		GT10J311 30//s PDF

    R K J 0822

    Abstract: No abstract text available
    Text: TOSHIBA GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT fiTinnn 'w • ■ ir v w êt ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed ; tf=0t30/¿s Max, Low Saturation Voltage : Vq e (sat)~^.7V (Max.)


    OCR Scan     		GT10J311 jil25 100ii R K J 0822 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT10J303 GT10J303 T O S H IB A IN S U L A T E D G ATE BIPO LA R T R A N SISTO R SILICO N N C H A N N E L IGBT Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S • • • • • 10 ±0.3


    OCR Scan     		GT10J303 PDF