7d graphic
Abstract: No abstract text available
Text: Control Systems Serial and Parallel Communications NULL MODEM: A simple device or set of connectors that switches the receive and transmit lines a 3-wire RS-232C connector. PARITY: An RS-232C error detection scheme that can detect an odd number of transmission errors.
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RS-232C
IEEE-488
RS-232C,
7d graphic
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13N06
Abstract: 8N06 13N06E 13-N06 13n0 4N20 ldo25 3N06E smd marking QTA me4n20
Text: SELECTOR GUIDE Products Type Case Style + TO-25 1 ID 4 ME4N20 ME4N20-F* 4 ME6NlO MEGNlO-F* 6 ME8N06E ME8NOGE-F* 8 ME1 3N06E ME13NOGE-F* 13 VDSS RDS(on w 63 -d i ~ ~ ~ 4 PD w9 Page 0.7 20 4 100 0.25 20 8 60 0.15 20 12 60 0.12 1.75 ’ Ta=25OC I 16 60 0.6
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ME4N20
ME4N20-F*
ME8N06E
O-252*
3N06E
ME13NOGE-F*
ME4P06
ME4P06-F*
ME8P06
ME8P06-F*
13N06
8N06
13N06E
13-N06
13n0
4N20
ldo25
smd marking QTA
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RT8152B
Abstract: rt8152 G995P1U 95A hall effect sensor UP6111AQDD RT9025 ic AH44 95A sensor hall VSS210 Atheros ar9
Text: 1 2 3 PCB STACK UP 4 5 6 7 8 BU3 Block Diagram LAYER 1 : TOP LAYER 2 : GND1 LAYER 3 : IN1 A LAYER 4 : GND PENRYN-SFF LAYER 5 : VCC 478P uFCPGA LAYER 6 : IN2 A P3,4 FSB LAYER 7 : GND2 FSB 667/800/1066MHZ DDR SYSTEM MEMORY LAYER 8 : BOT DDRIII-SODIMM1 DDRIII-SODIMM2
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667/800/1066MHZ)
PCI-Ex16
CK505
AO3404
AO4468
UPI6111A
RT9025
TPS51116
RT8152B
rt8152
G995P1U
95A hall effect sensor
UP6111AQDD
ic AH44
95A sensor hall
VSS210
Atheros ar9
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rt8152
Abstract: WPCE775CA0DG UP6111AQDD TPS51116REGR ME2N7002E ah44 hall 4506 gen WPCE775 RT8152B SLG8
Text: 1 2 3 PCB STACK UP 4 5 6 7 8 BU3 Block Diagram LAYER 1 : TOP LAYER 2 : GND1 LAYER 3 : IN1 A LAYER 4 : GND PENRYN-SFF LAYER 5 : VCC 478P uFCPGA LAYER 6 : IN2 A P3,4 FSB LAYER 7 : GND2 FSB 667/800/1066MHZ DDR SYSTEM MEMORY LAYER 8 : BOT DDRIII-SODIMM1 DDRIII-SODIMM2
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667/800/1066MHZ)
PCI-Ex16
CK505
AO3404
AO4468
UPI6111A
RT9025
TPS51116
rt8152
WPCE775CA0DG
UP6111AQDD
TPS51116REGR
ME2N7002E
ah44 hall
4506 gen
WPCE775
RT8152B
SLG8
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Untitled
Abstract: No abstract text available
Text: Tactile Switches Product Selection Guide Series KMT2 KMT0 KMR2-4 Size on PCB L x W mm 3 X 2,6 3 X 2,6 4,2 x 2,8 4,2 x 3,55 5,2 x 5,2 B Total Height (mm) 0,65 0,65 1,9 2,5 1,42 0,8 and 1,5 Tactile Switches Surface Mount Travel (mm) 0,15 0,15 0,2 to 0,35 0,25 to 0,3
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wpc8763ldg
Abstract: RTM875T-606 CX20561 toshiba satellite l50 WPC8763 fds8884 OZ129T winbond wpce775 isl88731 CX20561-12Z
Text: 1 2 3 4 5 6 7 8 TE1 Block Diagram PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND A HDMI HDMI Transmitter Sil1392 Page 21 LAYER 3 : IN1 Azalia CLOCK GENERATOR Intel CK505 ICS9LPR363 Page 21 Merom LAYER 4 : IN2 Page 2 A 35W CRT Page 20 LAYER 5 : VCC Page 3,4 LAYER 6 : BOT
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Sil1392
CK505
ICS9LPR363
667/800MHZ)
OZ129T)
RJ45/USB
CX20561)
wpc8763ldg
RTM875T-606
CX20561
toshiba satellite l50
WPC8763
fds8884
OZ129T
winbond wpce775
isl88731
CX20561-12Z
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CX20561
Abstract: cx20561-12z toshiba satellite c655 toshiba satellite c640 cx2056 wpc8763ldg 31TE1MB01N0 intel 4965AG g909 WPCE775
Text: 1 2 3 4 5 6 7 8 VER : E3D Description 31TE1MB0010 TE1M MB PM45/RB/MS WO CPU 31TE1MB0120 TE1M MB(PM45/MAIN/RB/HDMI/CIR)WO CPU 31TE1MB0130 TE1M MB(GM45/EXP/NO CIR/MS)WO CPU 31TE1MB0140 TE1M MB(GM45/GS/EXP/MS)WO CPU 31TE1MB0170 TE1M MB(GM45/GS/EXP/LC)WO CPU PENRYN
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31TE1MB0010
31TE1MB0120
31TE1MB0130
31TE1MB0140
PM45/RB/MS
PM45/MAIN/RB/HDMI/CIR
GM45/EXP/NO
GM45/GS/EXP/MS
GM45/GS/EXP/LC
GM45/HDMI/EXP/MS
CX20561
cx20561-12z
toshiba satellite c655
toshiba satellite c640
cx2056
wpc8763ldg
31TE1MB01N0
intel 4965AG
g909
WPCE775
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IT8502E
Abstract: tps51125 intel g41 crb isl6251 isl6251ahaz inventec TPS51610 RTS5159 ALC269X BAP31
Text: 5 4 3 2 1 THIS DRAWING AND SPECIFICATIONS, HEREIN, ARE THE PROPERTY OF INVENTEC CORPORATION AND SHALL NOT BE REPODUCED, COPIED, OR USED IN WHOLE OR IN PART AS THE BASIS FOR THE MANUFACTURE OR SALE OF ITEMS WITHOUT WRITTEN PERMISSION, INVENTEC CORPORATION, 2009 ALL RIGHT RESERVED.
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BAP31U
D-CS-1310A2264501-ALG
LMBT3904LT1G
200mA
OT-23
-1/16W-0402
100pF
IT8502E
tps51125
intel g41 crb
isl6251
isl6251ahaz
inventec
TPS51610
RTS5159
ALC269X
BAP31
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IT8502E
Abstract: RTM875T-606-VD-GRT G9091-180T11U intel g41 crb isl6251 ITE8502 tps51125 schematic intel g41 ITE8502F TPS51610
Text: 5 4 3 2 1 D D ACER_SJM31 C C MAIN BOARD 2009.05.04 B B A A EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE Monday, May 04, 2009 DATE 2009-ECO-006989 CHANGE NO. 5 SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX A REV 4 3 2 TITLE INVENTEC ACER_SJM31 VER:
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SJM31
2009-ECO-006989
D-CS-1310A22752-0-ALG
05VS/1
Latch/1U101
-1/16W-0402
1000pF
LMBT3904LT1G
200mA
IT8502E
RTM875T-606-VD-GRT
G9091-180T11U
intel g41 crb
isl6251
ITE8502
tps51125
schematic intel g41
ITE8502F
TPS51610
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LT1012A
Abstract: No abstract text available
Text: LT1012A/LT1012 Picoamp Input Current, Microvolt Offset, Low Noise Op Amp DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ OP-07 Type Performance: at 1/8th of OP-07’s Supply Current at 1/20th of OP-07’s Bias and Offset Currents Guaranteed Offset Voltage: 25µV Max
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LT1012A/LT1012
OP-07
OP-07â
1/20th
100pA
114dB
LT1012
LT1012A
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allen bradley potentiometer type j
Abstract: TRANSISTOR 2N3609 OP07S LT1012A 2N3609 LT1012 allen bradley 10k pot LT1012S8 OP-07 10k resistor array SIP
Text: LT1012A/LT1012 Picoamp Input Current, Microvolt Offset, Low Noise Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ OP-07 Type Performance: at 1/8th of OP-07’s Supply Current at 1/20th of OP-07’s Bias and Offset Currents Guaranteed Offset Voltage: 25µV Max
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LT1012A/LT1012
OP-07
1/20th
100pA
114dB
LT1012
allen bradley potentiometer type j
TRANSISTOR 2N3609
OP07S
LT1012A
2N3609
LT1012
allen bradley 10k pot
LT1012S8
10k resistor array SIP
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TRANSISTOR 2N3609
Abstract: SN1012 2N3609 allen bradley potentiometer type j OP07S LM11 op amp LT1012A allen bradley 10k pot LT1012 allen bradley potentiometer type j 1k
Text: LT1012A/LT1012 Picoamp Input Current, Microvolt Offset, Low Noise Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ OP-07 Type Performance: at 1/8th of OP-07’s Supply Current at 1/20th of OP-07’s Bias and Offset Currents Guaranteed Offset Voltage: 25µV Max
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LT1012A/LT1012
OP-07
1/20th
100pA
114dB
LT1012
TRANSISTOR 2N3609
SN1012
2N3609
allen bradley potentiometer type j
OP07S
LM11 op amp
LT1012A
allen bradley 10k pot
LT1012
allen bradley potentiometer type j 1k
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GS 069 LF
Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Text: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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BUK637-500A
BUK637-500B
BUK637-500C
BUK637
-500A
-500B
-500C
T-39-15
GS 069 LF
HCA-120
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S3V 09
Abstract: S3V 03
Text: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P idB = 24 dBm at f = 8 GHz • High gain - G idB = 8 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8835
JS8911-AS
S3V 09
S3V 03
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Untitled
Abstract: No abstract text available
Text: PD-9.1358D International IQR Rectifier IRLZ24NS/L HEXFET Power M O S F E T • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRLZ24NS • Low-profilethrough-hole(IRLZ24NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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1358D
IRLZ24NS/L
IRLZ24NS)
IRLZ24NL)
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IRFZ44NS
Abstract: No abstract text available
Text: International ^Rectifier PD91315 IRFZ44NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier
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IRFZ44NS
4BS5452
IRFZ44NS
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BUK637-600A
Abstract: BUK637-600B BUK637-600C BUK637
Text: N AMER P H I L I P S / D I S C R E T E SSE D • ^ 5 3 = 1 3 1 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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BUK637-600A
BUK637-600B
BUK637-600C
BUK637
-600A
-600B
-600C
1E-01
1E-03
1E-04
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IRG4PC40FD
Abstract: No abstract text available
Text: International l O R Rectifier PD 9.1464A IRG4PC40FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4PC40FD
O-247AC
IRG4PC40FD
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f5210s
Abstract: No abstract text available
Text: International IOR Rectifier pd-9.i 4o5b IR F5210S preliminary HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated
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F5210S
-100V
4A55452
00253fci
f5210s
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TRANSISTOR noise figure measurements
Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
Text: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER
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2N6680
HFET-1101)
HFET-1102
2N6680)
HFET-1102)
HFET-1102
TRANSISTOR noise figure measurements
Hewlett-Packard application note 970
et1102
14CL 40
HFET-1101
2N6680
D5880
application note Hewlett-Packard 970
line AMPLIFIER satellite
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MACH5-128/68-7/10/12/15
Abstract: No abstract text available
Text: COM’L: -7/10/12/15 PRELIMINARY AMD£I IND: -10/12/15/20 The MACH5-128 MACH5-128/68-7/10/12/15/20 MACH5-128/104-7/10/12/15/20 MACH5-128/120-7/10/12/15/20 Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture
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MACH5-128
MACH5-128/68-7/10/12/15/20
MACH5-128/104-7/10/12/15/20
MACH5-128/120-7/10/12/15/20
16-038-PQR-1
PQR144
MACH5-128/XXX-7/10/12/15
PQR160
160-Pin
16-038-PQR-1
MACH5-128/68-7/10/12/15
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731 tico
Abstract: tico 731 marking caa TQFP Package AMD tico 731 103 mach 1 family amd
Text: Zi PRELIMINARY The MACH 5 Value Plus Family Advanced Micro Devices Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture — 5-V devices will not overdrive 3-V inputs safe for mixed voltage — Safe for hot socketing
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25752b
0D3bD23
731 tico
tico 731
marking caa
TQFP Package AMD
tico 731 103
mach 1 family amd
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S3 TRIO 64
Abstract: AY 5 4007 0062g GS 069 HF
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF136 MRF136Y The RF M OSFET Line RF P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode M OSFETs 15 W, 30 W 2-400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed fo r w id e b a n d large-signal a m p lifie r and o scilla to r app licatio n s in the 2 to
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MRF136
MRF136Y
MRF136
MRF136Y
S3 TRIO 64
AY 5 4007
0062g
GS 069 HF
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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