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    f5210s

    Abstract: No abstract text available
    Text: International IOR Rectifier pd-9.i 4o5b IR F5210S preliminary HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated


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    PDF F5210S -100V 4A55452 00253fci f5210s