RAYTHEON
Abstract: RMBA09500-58
Text: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and
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RMBA09500-58
RMBA09500
RAYTHEON
RMBA09500-58
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GSM/GSM module circuit diagram
Abstract: GRM36COG470J50 Murata switchplexer DCS1800 GSM900 MMM5063 PCS1900
Text: Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Advance Information MMM5063/D Rev. 0.2, 09/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc.
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MMM5063/D
MMM5063
MMM5063
GSM900/DCS1800/
PCS1900
GSM/GSM module circuit diagram
GRM36COG470J50
Murata switchplexer
DCS1800
GSM900
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MURATA GSM FILTER
Abstract: No abstract text available
Text: Advance Information MMM5063/D Rev. 0.1, 07/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5063 See Figure 25 Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/
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MMM5063/D
MMM5063
MMM5063
GSM900/DCS1800/
PCS1900
GSM900
DCS1800
MMM5063/D
MURATA GSM FILTER
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Untitled
Abstract: No abstract text available
Text: RMPA0913C 3.5V AMPS/CDMA Power Amplifier General Description Features The RMPA0913C is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip matching
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RMPA0913C
RMPA0913C
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1895 ic
Abstract: schematics for a PA amplifier class d neohm resistor DCS1800 GSM900 MMM5062 PCS1900 MURATA GSM FILTER Murata switchplexer b 332 k
Text: Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Technical Data MMM5062/D Rev. 3.2, 09/2003 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc.
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MMM5062/D
MMM5062
MMM5062
GSM850/GSM900/
DCS1800/PCS1900
1895 ic
schematics for a PA amplifier class d
neohm resistor
DCS1800
GSM900
PCS1900
MURATA GSM FILTER
Murata switchplexer
b 332 k
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DCS1800
Abstract: GSM900 MMM5062 PCS1900
Text: Freescale Semiconductor, Inc. Technical Data MMM5062/D Rev. 3.2, 09/2003 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device
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MMM5062/D
MMM5062
MMM5062
GSM850/GSM900/
DCS1800/PCS1900
DCS1800
GSM900
PCS1900
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TRANSISTOR 1383
Abstract: gsm crosstalk mesfet datasheet by motorola motorola gsm range power amplifier module DCS1800 GSM900 MMM5062 PCS1900
Text: Technical Data MMM5062/D Rev. 1, 06/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/
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MMM5062/D
MMM5062
MMM5062
GSM850/GSM900/
DCS1800/PCS1900
GSM850/900
DCS1800
TRANSISTOR 1383
gsm crosstalk
mesfet datasheet by motorola
motorola gsm range power amplifier module
GSM900
PCS1900
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Sn92
Abstract: 9553 3M BA09 fan 7073 RAYTHEON raytheon ref RMBA09500-58 1008HS-390TKBC
Text: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and
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RMBA09500-58
RMBA09500
Sn92
9553 3M
BA09
fan 7073
RAYTHEON
raytheon ref
RMBA09500-58
1008HS-390TKBC
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GRM706COG4R3C
Abstract: MAX2216 MAX2216EVKIT ammeter
Text: 19-2193; Rev 0; 10/01 MAX2216 Evaluation Kit Features ♦ Easy Evaluation of MAX2216 ♦ All Peripheral Components Included ♦ Tuned for European GSM and DCS Bands ♦ Fully Assembled and Tested Ordering Information PART TEMP RANGE MAX2216EVKIT -40°C TO +85°C
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MAX2216
MAX2216
MAX2216EVKIT
100pF
GRM36COG101J050A
GRM36X7R103K016A
GRM36COG070B050A
GRM706COG4R3C
MAX2216EVKIT
ammeter
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Untitled
Abstract: No abstract text available
Text: Advance Information MMM5063/D Rev. 0, 12/2002 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5063 See Figure 25 Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/
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MMM5063/D
MMM5063
MMM5063
GSM900/DCS1800/
PCS1900
GSM900
DCS1800
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GSM/GSM module circuit diagram
Abstract: GRM36COG470J GRM36X7R103K25 Murata switchplexer motorola gsm range power amplifier module GRM36X7R104K25 142-0711-821 GRM36COG3R9J50 gsm block diagram DCS1800
Text: Advance Information MMM5063/D Rev. 0, 12/2002 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5063 See Figure 25 Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/
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MMM5063/D
MMM5063
MMM5063
GSM900/DCS1800/
PCS1900
GSM900
DCS1800
PCS1900
GSM/GSM module circuit diagram
GRM36COG470J
GRM36X7R103K25
Murata switchplexer
motorola gsm range power amplifier module
GRM36X7R104K25
142-0711-821
GRM36COG3R9J50
gsm block diagram
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COILCRAFT XFL4020
Abstract: XFL4020-152MEC ISL8033EVAL2Z CR0402-16W C2012X5R0J226M ISL8033 ROHS panasonic ERJ2RKF1003 ERJ-2RKF1243X ISL8033EVAL2ZREVAPCB
Text: Application Note 1611 ISL8033EVAL2Z Dual 3A Low Quiescent Current, High Efficiency, Synchronous Buck Regulator Description Recommended Equipment The ISL8033EVAL2Z kit is intended for use by individuals with requirements for Point-of-Load applications sourcing from 2.85V to 6V. The
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ISL8033EVAL2Z
ISL8033
229in2.
1-888-INTERSIL
AN1611
COILCRAFT XFL4020
XFL4020-152MEC
CR0402-16W
C2012X5R0J226M
ROHS panasonic
ERJ2RKF1003
ERJ-2RKF1243X
ISL8033EVAL2ZREVAPCB
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GSM/GSM module circuit diagram
Abstract: DCS1800 GSM900 MMM5063 PCS1900 C12C18
Text: Freescale Semiconductor, Inc. Advance Information MMM5063/D Rev. 0.2, 09/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device
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MMM5063/D
MMM5063
MMM5063
GSM900/DCS1800/
PCS1900
GSM/GSM module circuit diagram
DCS1800
GSM900
C12C18
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BR 11052
Abstract: GRM36cog IS136 TRF1500 A 3 11052 lownoise t20 amphenol 24- 28 pf BR+11052
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of
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TRF1500
SLWS041A
IS136)
48-Pin
TRF1500
800-MHz
1900-MHz
BR 11052
GRM36cog
IS136
A 3 11052
lownoise t20
amphenol 24- 28 pf
BR+11052
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SWITCHPLEXER
Abstract: motorola gsm range power amplifier module PCB GSM ANTENNA DCS1800 GSM900 MMM5062 PCS1900 GRM36X7R103K25 GRM36X7R331K50 824 mosfet
Text: Technical Data MMM5062/D Rev. 3, 9/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/
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MMM5062/D
MMM5062
MMM5062
GSM850/GSM900/
DCS1800/PCS1900
GSM850/900
DCS1800
SWITCHPLEXER
motorola gsm range power amplifier module
PCB GSM ANTENNA
GSM900
PCS1900
GRM36X7R103K25
GRM36X7R331K50
824 mosfet
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RAYTHEON
Abstract: RMBA09501 RMBA09501-58
Text: RMBA09501-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09501 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and
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RMBA09501-58
RMBA09501
RAYTHEON
RMBA09501-58
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0603HS-10NTJBC
Abstract: 0603HS-68NTJBC GRM36COG470J IS136 TRF1500 LNA T20 GRM36cog GRM36COG100D
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041 – DECEMBER 1997 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of
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TRF1500
SLWS041
IS136)
48-Pin
TRF1500
800-MHz
1900-MHz
0603HS-10NTJBC
0603HS-68NTJBC
GRM36COG470J
IS136
LNA T20
GRM36cog
GRM36COG100D
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GRM36COG470J50
Abstract: AWT921 AWT921S11 SSOP-28 ferrite sheet panasonic A2 RFC 8-pin TX30D ATC100A110JW150X
Text: AWT921 Integrated High Power Amp 900 MHz PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • • • • • • High output power levels High Efficiency True Surface Mount Package with Integrated Heat Slug Internal Bias Circuit Requiring Nominal Input Voltages +10%
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AWT921
SSOP-28
AWT921
GRM36COG470J50
AWT921S11
SSOP-28
ferrite sheet panasonic
A2 RFC 8-pin
TX30D
ATC100A110JW150X
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RAYTHEON
Abstract: LL1608-FH5N6S RMPA0913C-58
Text: R aytheon Commercial E lectronics RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier Description The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/ CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip
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RMPA0913C-58
RMPA0913C-58
RAYTHEON
LL1608-FH5N6S
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an1522
Abstract: erj2rkf1003 ISL9104IRUNEVAL1Z L1207C1R0MPWS SMD BERG header smd capacitor pinout ISL9104 ISL9104A ISL9104IRUBEVAL1Z ISL9104IRUFEVAL1Z
Text: Application Note 1522 ISL9104xxxxEVAL1Z, ISL9104AxxxxEVAL1Z Evaluation Board Application Manual Description The ISL9104 evaluation kit provides a test platform for the ISL9104 4.3MHz low quiescent current, high efficiency integrated step-down regulator. The ISL9104 is
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ISL9104xxxxEVAL1Z,
ISL9104AxxxxEVAL1Z
ISL9104
500mA
AN1522
erj2rkf1003
ISL9104IRUNEVAL1Z
L1207C1R0MPWS
SMD BERG header
smd capacitor pinout
ISL9104A
ISL9104IRUBEVAL1Z
ISL9104IRUFEVAL1Z
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Untitled
Abstract: No abstract text available
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of
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TRF1500
SLWS041A
IS136)
48-Pin
TRF1500
800-MHz
1900-MHz
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C3225X5R1C476M
Abstract: SMD Transistor 070 R AC adapter 19V liteon smd transistor ea 1P smd transistor transistor smd 12p transistor 12p smd schematic liteon adapter notebook EA Q4 SMD transistor transistor panasonic vertical preset 10k
Text: ISL85001EVAL1Z: 1A Regulator Standard Buck PWM Application Note December 1, 2008 AN1443.0 Description Recommended Equipment The ISL85001EVAL1Z REV A kit is intended for use by individuals with requirements for Point-of-Load applications sourcing from 4.5V to 25V. The ISL85001EVAL1Z evaluation
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ISL85001EVAL1Z:
AN1443
ISL85001EVAL1Z
ISL85001
425in2
ISL85001EVAL1Z
C3225X5R1C476M
SMD Transistor 070 R
AC adapter 19V liteon
smd transistor ea
1P smd transistor
transistor smd 12p
transistor 12p smd
schematic liteon adapter notebook
EA Q4 SMD transistor transistor
panasonic vertical preset 10k
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Untitled
Abstract: No abstract text available
Text: Technical Data MMM5062/D Rev. 2, 07/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/
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MMM5062/D
MMM5062
MMM5062
GSM850/GSM900/
DCS1800/PCS1900
GSM850/900
DCS1800
PCS1900
MMM5062/D
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tzbx4n100bc110
Abstract: MA2810-1 tz03p450fr LQH3NR27M92 kf 470 replacements transistors RPE110COG2R2C100V LQH3N220K04 DE1410E 1022R DE7100F222MVA1-KC
Text: DESIGN ENGINEERING KITS ★ KIT-GRM39 CAPACITORS— CHIB M O N O LITH IC • ■ ■ ■ ■ ■ muFfntn Part No. Miniature size Wide capacitance, TC, voltage and tolerance range Industry standard sizes 8mm and 12mm tape and reel for auto-placements Barrier layer termination systems for wave, reflow or vapor phase solder
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KIT-GRM39
KIT-GRM36
GRM36COG0R5C5Â
3500K
3900K
4250K
4050K
3650K
4100K
4200K
tzbx4n100bc110
MA2810-1
tz03p450fr
LQH3NR27M92
kf 470 replacements transistors
RPE110COG2R2C100V
LQH3N220K04
DE1410E
1022R
DE7100F222MVA1-KC
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