Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR GN1G TECHNICAL DATA Surface Mount Glass Passivated Rectifier FEATURES ・Plastic package has Underwriters Laboratory flammability Classification 94V-0. ・For surface mounted aplications. ・Low profile package. ・Built-in strain relief, ideal for automated placement.
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E140
Abstract: SMA E140
Text: SEMICONDUCTOR GN1G TECHNICAL DATA Surface Mount Glass Passivated Rectifier FEATURES Plastic package has Underwriters Laboratory flammability Classification 94V-0. B For surface mounted aplications. 2 E Low profile package. A Glass passivated chip junction.
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50mVp-p
013mm)
E140
SMA E140
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GN1G
Abstract: SMA Package E140
Text: SEMICONDUCTOR GN1G MARKING SPECIFICATION SMA 1 PACKAGE 1. Marking method Laser Marking 2. Marking E140 1 2 3 No. Item Marking Polarity Device Name Lot No. 2006. 6. 21 Revision No : 2 Description Bar Cathode E140 GN1G 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR GN1G TECHNICAL DATA Surface Mount Glass Passivated Rectifier FEATURES Plastic package has Underwriters Laboratory flammability Classification 94V-0. B For surface mounted aplications. 2 E Low profile package. A D Built-in strain relief, ideal for automated placement.
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50mVp-p
013mm)
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xxww
Abstract: a1r8 CMM2321 WH SO-8 PIN
Text: CMM2321 Preliminary Product Information April 1997 1 of 4 2.4 to 2.5 GHz 1 Watt Power Amplifier Features ❏ 48% Power Added Efficiency ❏ 31.5 dBm Output Power ❏ Low Distortion ❏ Low Cost SO-8 Surface Mount Package Functional Block Diagram Applications
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CMM2321
CMM2321
xxww
a1r8
WH SO-8 PIN
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gn1j
Abstract: GN1M
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. GPSM-101-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP SURFACE MOUNT RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES GN1A - GN1M Low profile package - designed for surface mount applications
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GPSM-101-1A
OC/10
DO214AC
013mm)
gn1j
GN1M
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com GN1A - GN13 GLASS PASSIVATED JUNCTION
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DO-214AC)
UL94V-O
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GN1K
Abstract: No abstract text available
Text: GN1A-S thru GN1M-S 1.0 Amp. Surface Mount Glass Passivated Rectifiers Voltage Range 50 to 1000 Volts Forward Current 1.0 Ampere Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low profile package
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260oC/10
MIL-STD-750,
125oC
GN1K
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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GN1M
Abstract: GN13 GN1G
Text: GN1A - GN13 GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT PRV : 50 - 1300 Volts Io : 1.0 Ampere SMA DO-214AC * * * * * 4.5 ± 0.15 5.0 ± 0.15 FEATURES : Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
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DO-214AC)
UL94V-O
GN1M
GN13
GN1G
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GN1M
Abstract: 100 Amp current 1300 volt diode GN13
Text: GN1A - GN13 GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT PRV : 50 - 1000 Volts Io : 1.0 Ampere SMA DO-214AC 5.0 ± 0.15 * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop 0.2 ± 0.07 1.2 ± 0.2
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DO-214AC)
UL94V-O
GN1M
100 Amp current 1300 volt diode
GN13
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GN1M
Abstract: GN13 GN1D
Text: GN1A THRU GN1M, GN13 SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1300 Volts Forward Current - 1.0 Ampere Features For surface mounted applications Low profile package Built-in strain relief Easy pick and place Plastic package has Underwriters Laboratory
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MIL-STD-750,
MIL-STD-750D
013mm
GN1M
GN13
GN1D
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glass passivated rectifiers
Abstract: GN1M gn1j GN1K GN1D GN1G
Text: GN1A thru GN1M Surface Mount Glass Passivated Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 1.0 Ampere Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low profile package
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250oC/10
DO-214AC
MIL-STD-750,
glass passivated rectifiers
GN1M
gn1j
GN1K
GN1D
GN1G
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GN1M
Abstract: GN13 gn1j
Text: GN1A - GN13 GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT PRV : 50 - 1300 Volts Io : 1.0 Ampere SMA DO-214AC * * * * * 4.5 ± 0.15 5.0 ± 0.15 FEATURES : Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
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DO-214AC)
UL94V-O
GN1M
GN13
gn1j
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IC 7017 Unit COUNTER
Abstract: HM62256 sram transistor 91 330 H8/330 HD63140 j1 3003 OMC932723278 Hitachi DSA0044 APS330-3002
Text: OMC932723278 H8/330 Application Notes On-Chip Supporting Modules Preface The H8/330 is an original Hitachi high-performance single-chip microcontroller with a high-speed H8/300 CPU core and a set of on-chip peripheral functions optimized for industrial embedded
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OMC932723278
H8/330
H8/300
IC 7017 Unit COUNTER
HM62256 sram
transistor 91 330
HD63140
j1 3003
OMC932723278
Hitachi DSA0044
APS330-3002
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hxn mh
Abstract: hxn wh a2r2c sgx64ig hy02 5X62 whm02 CMM1321 PB-CMM1321 HM02
Text: CMM1321 Preliminary Product Information November 1996 1 of 5 1.85 to 1.91 GHz 5V, 28.5 dBm, PCS Power Amplifier Features ❏ 30% Linear Power Added Efficiency ❏ 28.5 dBm Output Power (ANSI J-STD-018 CDMA) ❏ 24 dB Gain ❏ Tested Under Digital Modulation
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CMM1321
J-STD-018
CMM1321
hxn mh
hxn wh
a2r2c
sgx64ig
hy02
5X62
whm02
PB-CMM1321
HM02
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GN1M
Abstract: No abstract text available
Text: GN1A thru GN1M 1.0 Amp. Surface Mount Glass Passivated Rectifiers Voltage Range 50 to 1000 Volts Forward Current 1.0 Ampere Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low profile package
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250oC/10
DO-214AC
MIL-STD-750,
125oC
GN1M
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Untitled
Abstract: No abstract text available
Text: PHTX-8710-ph30-DD 11/19/99 5:15 PM Page 29 MICROPROCESSOR BASED COMPACT pH/ORP TRANSMITTER Model PHTX-8710 $ 438 Electronics Only SPECIFICATIONS PH pH Range: 0 to 14 pH PHTX-8710 Transmitter with PH-2720-PA Pre-Amplifier and PHE-3271 pH Electrode DISPLAY RANGES
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PHTX-8710-ph30-DD
PHTX-8710
PH-2720-PA
PHE-3271
4X/IP65
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77 GHz VCO
Abstract: bosch pump isdb-S bosch 0 261 200 261 8PSK BLOCK DIAGRAM bosch vp ISDB-S NIM receiver 8psk schematic diagram Tornado 2.2 varicap 915 210
Text: Specificatio n, V ersion 2 .0 1, 2 004-02-05 TUA6120 ’TORNADO’ Gain controlled I/Q Mixer for d i g i t a l Q P S K o r 8PSK Sat Signa ls Wireless Components N e v e r s t o p t h i n k i n g . Edition 2004-02-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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TUA6120
D-81541
77 GHz VCO
bosch pump
isdb-S
bosch 0 261 200 261
8PSK BLOCK DIAGRAM
bosch vp
ISDB-S NIM
receiver 8psk schematic diagram
Tornado 2.2
varicap 915 210
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. GPSM-101-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES GN1A - GN1M Low profile package - designed for surface mount applications
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GPSM-101-1A
OC/10
DO214AC
013mm)
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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GN1G
Abstract: No abstract text available
Text: SE M IC O N D U C TO R GN1G TECHNI CAL DATA Surface M ount G lass Passivated Rectifier FEATURES • Plastic package has Underwriters Laboratory flammability Classification 94V-0. • For surface mounted aplications. JJZ • Low profile package. • Built-in strain relief, ideal for autom ated placement.
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Untitled
Abstract: No abstract text available
Text: Glass passivated rectifier diodes. 1 Amp. to 3 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max.Recurrent Repetitive Peak Forward Forward Rectified Reverse T Y PE Current Current Voltage If av Ta V rrm I fr m (A) Axial Lead | S.M.D.
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4007G
BY133G
1N5391G/GNOA
DO-41/SMA
1N5391G
1NS392G
1NS393G
1NS394G
1NS39SG
1N5396G
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