GN1010 Search Results

gn1015

Abstract: GN1021 GN1041 GN101
Contextual Info: GaAs MMIC Microwave Monolithic IC # For Amplifiers Type No. NF (dB) PG (dB) Measuring Condition Q -— >D i Application • U/V CATV Wide Band Amp. Buffer Amp. SHF IF Amp. Idd (mA) Circuit Construction Package f(MHz) No. GN1010 2.0 9 3 25 100 - 2000 FET one-stage amp. (with band control pin)

GN01010

Contextual Info: GaAs MMICs GN01010 GN1010 GaAs N-Channel MES IC Unit: mm 2.9+0.2 –0.05 1.9±0.1 For high-output high-gain amplification 0.16+0.1 –0.06 (0.95) (0.95) 5° M Di ain sc te on na tin nc ue e/ d R(0.5) 2.8+0.2 –0.3 • General-use wide-band amplifier • Low noise

GN01010

Abstract: GN1010 3PD200
Contextual Info: GaAs MMICs GN01010 GN1010 GaAs N-Channel MES IC Unit: mm 2.9+0.2 –0.05 1.9±0.1 For high-output high-gain amplification 5° R(0.5) (0.8) 7° Rating Unit VDS 6 V VGS −4 V ID 45 mA Gate current IG 3 mA Allowable power dissipation PD 200 mW Channel temperature

k3025

Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
Contextual Info: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8

Contextual Info: GaAs MMICs GN01010 GN1010 GaAs N-Channel MES IC Unit: mm 2.9+0.2 –0.05 1.9±0.1 VGS Drain current ID Gate current IG Allowable power dissipation PD Channel temperature Tch Storage temperature Tstg Unit 6 V −4 V 45 mA 3 mA 200 mW 150 °C −55 to +150

Contextual Info: Panasonic GaAs MMICs GN1010 GaAs N-Channel MES IC Unit : mm For high-output high-gain amplification • Features • General-use wide-band amplifier • Low noise • With bandwidth control pin ■ Absolute Maximum Ratings Parameter Power supply voltage Drain current

Contextual Info: MMICs GN1010 G N 1010 Package Dimensions GaAs N Channel MES Type 1C For high-output high-gain amplification • Features •General-purpose wide bandwidth amplifier •Low noise •With bandwidth control terminal ■ Absolute Maximum Ratings Ta=25°C Item

GN01010

Abstract: GN1010
Contextual Info: GaAs MMICs GN01010 GN1010 GaAs N-Channel MES IC Unit: mm 2.9+0.2 –0.05 1.9±0.1 For high-output high-gain amplification 0.16+0.1 –0.06 (0.95) (0.95) Unit 6 V VGS −4 V ID 45 mA Gate current IG 3 mA Allowable power dissipation PD 200 mW Channel temperature

cc 27pf

Abstract: GN1010 FS21
Contextual Info: GN1010 GaAs MMICs GN1010 GaAs N-Channel MES IC Unit : mm For high-output high-gain amplification +0.2 2.8 –0.3 +0.2 0.65±0.15 1.5 –0.3 0.65±0.15 • Features Parameter Symbol Rating VDS 6 Power supply voltage 2 +0.1 0.8 0.4±0.2 Unit 1 : Source 2 : Drain

GN2011

Contextual Info: GaAs MMIC Microwave Monolithic IC # GaAs MMIC for Mobile Communication Use Block Type No. Functions Main Characteristics Applications Package No. Low noise amplifier with AGC, small current PG: 18dB, Id = 7mA NF: 2.3dB ACG: 30dB GSM Analog PDC GN01032N Low noise amplifier + mixer with local amplifier,

8893 single chip tv processor

Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Contextual Info: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

GN1010

Contextual Info: Panasonic G aA s M M IC s GN1 01 0 GaAs N-Channel MES IC Unit : mm For high-output high-gain amplification • Features • General-use wide-band amplifier • Low noise • With bandwidth control pin ■ Absolute Maximum Ratings Ta = 25°C Param eter Symbol

3SK184

Abstract: 3SK192 3sk220 3SK139 h024 3sk200 3sk169 GN1043 4 pin hall 3SK14
Contextual Info: —5/ Mini Type 4-pin Package • Outline U n it I mm Diodes 2 -8 ‘ o 3 0 .6 5 t Q 1 5, a w rn 15 — ,0 .6 5 t 0 . 1 5 m - 5 -8 1 (4 • > '« . A, it it i* á 7 ^ r- y T \ r „ iS h £ £ ¥ CM CM <*> ‘ o |o o l ÒK t t S t ? n £ ' M J CD 7 ^ M 'U * - v - y 7 \

GN2011

Abstract: GN1017 N4003 GN2012 AGN01019B
Contextual Info: GaAs MMIC Microwave Monolithic IC # GaAs MMIC for Mobile Communication Use Block Type No. Functions Main Characteristics Applications Package No. Low noise amplifier, single positive power supply, high gain, with diversity antenna change-over switch PC,: 15dB, NF: 3dB,

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030