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    GM71C18160AJ7

    Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
    Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I


    OCR Scan     		PDF GM71C1000B-60 GM71C 1OO0BJ-60 1000BZ-60 100OBL-6O 1000BLJ-60 GM71C1000BLZ-60 GM71C18160AJ7 GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15

    Untitled

    Abstract: No abstract text available
    Text: GM71V18160A GM71VS18160AL LG S em icon C o.,L td . 1,048,576 W ORDS x 16 BIT CMOS DYNAMIC RAM Description Features The G M 71V 18I60A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM 71V18160A has realized higher density, higher performance and various functions by utilizing


    OCR Scan     		PDF GM71V18160A GM71VS18160AL 18I60A 71V18160A

    GM71V18160AT8

    Abstract: C12N GM71V18160AJ-8
    Text: @ LG Semicon. Co. LTD. Description Features The GM71V18160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V18160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.


    OCR Scan     		PDF GM71V18160A GM71V18160AT8 C12N GM71V18160AJ-8