GM23C4100 Search Results

GM23C410

Contextual Info: @ LG Semicon. Co. LTD. Description Pin Configuration The GM28C4100A high performance read only memory is organized as 524,288 x 8 bit Byte Mode or as 262,144 x 16 bit (Word Mode) followed by BHE mode select. The GM23C4100A offers automatic power down controlled by

GM23C4100B

Abstract: ORD 1114 GM23C4100B-15 GM23C4100B-12
Contextual Info: @ LG Semicon. Co. LTD Description The GM23C4100B high performance read only memory is organized either as 524,288 x 8 bits byte mode or 262,144 x 16 b its (w ord m ode) fo llo w e d by BH E m ode s e le c t. The GM23C4100B offers automatic power down controlled by the make

Contextual Info: GOLDSTAR T E C H N O L O G Y INC/ 4?E D • H D 2 Û 7 S ? 0 D D 3 b Q E t. ■ GoldStar_ mT-Vé-i3-IS GM23C4100 512KX 8 /2 5 6 K x 16 BIT CMOS MASK ROM Description The GM 23C4100 high performance read only memory is organized either as 524,288 x 8 bit Byte

4170A

Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Contextual Info: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL

Contextual Info: G M 23C 4100A LG Semicon Co.,Ltd. 512K x 8 / 256K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM28C4100A high performance read only memory is organized as 524,288 x 8 bit Byte Mode or as 262,144 x 16 bit (Word Mode) followed by BHE mode select.

GoldStar

Contextual Info: \ 49k G M 23C 4100 GoldStar 512K x 8 / 256K x 16 BIT GOLDSTAR ELECTRON CO., LTD. CMOS MASK ROM D escrip tio n The G M 23C 4100 high perform ance read only m em ory is organized either as 524,288 x 8 bit Byte Mode or as 2 6 2 ,1 4 4 x 1 6 bit (Word Mode) fol­