GS6202
Abstract: GS6202RQQF
Text: Dual 250mA C-MOS LDO with Enable Product Description Features The GS6202 series are highly accurate, dual, low noise, CMOS LDO voltage regulators with enable function. The EN function allows the output of each regulator to be turned off independently, resulting in
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250mA
GS6202
GS6202
350mA
GS6202RQQF
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Untitled
Abstract: No abstract text available
Text: Low Dropout CMOS Voltage Regulators Product Description Features The GS2915 series are a low-dropout linear regulators. There are devices designed specifically for battery-operated systems. Ground current is very small 2A - Typ , that significantly extends battery
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GS2915
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GS5810
Abstract: No abstract text available
Text: SUPER-SMALL PACKAGE PWM CONTROL STEP-UP SWITCHING REGULATOR Product Description Features The GS5810 is a compact, high efficiency, and low voltage step-up DC/DC converter with an Adaptive Current Mode PWM control loop, includes an error amplifier, ramp generator, comparator, switch pass
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GS5810
300mA
450KHz
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Globaltech Semiconductor
Abstract: GS2905 GS2905X15 GS2905X18 GS2905Y15 GS2905Y18 GS2905Y25 GS2905Y33 GS2905Y36
Text: GS2905 500mA CMOS LDO Voltage Regulator Product Description The GS2905 series is a group of positive voltage output, three-pin regulators, that provide a high current even when the input/output voltage differential is small. Low power consumption and high accuracy is achieved through CMOS and programmable fuse
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GS2905
500mA
GS2905
OT-89
OT-223
Globaltech Semiconductor
GS2905X15
GS2905X18
GS2905Y15
GS2905Y18
GS2905Y25
GS2905Y33
GS2905Y36
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GS75232TS
Abstract: 100 20L A1 diode GS75232 GS75232S GS75232SS SOIC-20 SSOP-20 TSSOP-20
Text: GS75232 Multiple RS-232 Drivers & Receivers Product Description The GS75232 are monolithic device containing 3 independent drives and 5 receivers. These are designed to interface between date terminal equipment and date communication equipment as designed by EIA-232-D.
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GS75232
RS-232
GS75232
EIA-232-D.
EIA-232-D
RS-232-C)
GS75232TS
100 20L A1 diode
GS75232S
GS75232SS
SOIC-20
SSOP-20
TSSOP-20
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Untitled
Abstract: No abstract text available
Text: 300mA Low Step-Up Voltage PFM Boost Converter Product Description Features The GS5801 Series is a CMOS PFM-control step-up switching regulator that mainly consists of a reference voltage source, an oscillator, and a comparator enabling products with a low ripple over a wide range,
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300mA
GS5801
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GS2911
Abstract: GS2911N15 GS2911Y15 GS2911Y18 GS2911Y20 GS2911Y25 GS2911Y33 GS2911Y50 56k modem
Text: GS2911 300mA CMOS Positive LDO Voltage Regulator Product Description The GS2911 is a positive voltage output, three-pin regulator that provides a high current even when the input/output voltage differential is small. Low power consumption and high accuracy
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GS2911
300mA
GS2911
OT-89
250mA
GS2911N15
GS2911Y15
GS2911Y18
GS2911Y20
GS2911Y25
GS2911Y33
GS2911Y50
56k modem
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Untitled
Abstract: No abstract text available
Text: 1A Positive Voltage Regulator Product Description Features The GS9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic body diode to eliminate any reversed
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GS9701
OT-23-5)
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Untitled
Abstract: No abstract text available
Text: 1A Low-Voltage LDO Regulator Product Description Features The GS2610, GS2611 and GS2612 are 1A low-dropout linear voltage regulators that provide low-voltage, high-current output. The GS2610/1/2 SERIES offers extremely low dropout typically410 mV at 1A and low
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GS2610,
GS2611
GS2612
GS2610/1/2
typically410
GS2610
OT-223
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Untitled
Abstract: No abstract text available
Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM3407AS,
-30V/-2
OT-23
Lane11
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Untitled
Abstract: No abstract text available
Text: Ultra Low Capacitance 2-Line ESD Protection Array Product Description Features The GSE6V8UN is 2-channel very low capacitance ESD transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to
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OT-353
Lane11
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Untitled
Abstract: No abstract text available
Text: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4906, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM4906,
GSM4906SF
Lane11
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Untitled
Abstract: No abstract text available
Text: 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM4440,
GSM4440SF
Lane11
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Untitled
Abstract: No abstract text available
Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM3484,
0V/12A
0V/10A
O-252-2L
GSM3484DF
O-252-2L)
Lane11
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Untitled
Abstract: No abstract text available
Text: Single-Line ESD Protection Array Product Description Features The GSE0592 are designed by TVS bi-direction device that is to protect sensitive electronics from damage or latch-up due to ESD. They are designed for use in applications where board space is at a premium.
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GSE0592
OD-923
Lane11
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Untitled
Abstract: No abstract text available
Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM4936S,
GSM4936SSF
Lane11
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Untitled
Abstract: No abstract text available
Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6405TSF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM6405TSF,
-30V/-5
-30V/-4
Lane11
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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GSM2367AS,
-20V/-2
OT-23
Lane11
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Untitled
Abstract: No abstract text available
Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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GSM3402A,
OT-23
Lane11
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Untitled
Abstract: No abstract text available
Text: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM4924,
GSM4924SF
Lane11
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Untitled
Abstract: No abstract text available
Text: Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize
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GSM7002T
640mA
950mA.
Lane11
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Untitled
Abstract: No abstract text available
Text: Ultra Low Capacitance Single-Line ESD Protection Array Product Description Features The GSE9X5VU is an ESD transient voltage suppression component which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic
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IEC61000-4-2,
MILSTD-883
Lane11
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Untitled
Abstract: No abstract text available
Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM4936WS,
GSM4936WSSF
Lane11
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Untitled
Abstract: No abstract text available
Text: N-Channel Enhancement Mode MOSFET Product Description Features The GSM1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior
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