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    GSM1012 Search Results

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    GSM1012 Price and Stock

    igus Inc GSM-1012-10

    iglidur G bearing, 10mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GSM-1012-10 Bulk 1
    • 1 $2.47
    • 10 $2.47
    • 100 $0.57
    • 1000 $0.57
    • 10000 $0.57
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    TME GSM-1012-10 68 1
    • 1 $0.639
    • 10 $0.511
    • 100 $0.48
    • 1000 $0.48
    • 10000 $0.48
    		Buy Now

    igus Inc GSM-1012-20

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 20mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-20 152 1
    • 1 $1.51
    • 10 $1.21
    • 100 $1.14
    • 1000 $1.14
    • 10000 $1.14
    		Buy Now

    igus Inc GSM-1012-14

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 14mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-14 38 1
    • 1 $2.74
    • 10 $2.19
    • 100 $2.05
    • 1000 $2.05
    • 10000 $2.05
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    igus Inc GSM-1012-15

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 15mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-15 16 1
    • 1 $2.74
    • 10 $2.19
    • 100 $2.05
    • 1000 $2.05
    • 10000 $2.05
    		Buy Now

    igus Inc GSM-1012-05

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 5mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-05 9 1
    • 1 $2.68
    • 10 $2.16
    • 100 $2.02
    • 1000 $2.02
    • 10000 $2.02
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    Find more GSM1012 price and stock on Findchips.com

    GSM1012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode MOSFET Product Description Features The GSM1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		GSM1012 Lane11 PDF

    Untitled

    Abstract: No abstract text available
    Text: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and


    Original     		GSM1012E, OT-523 Lane11 PDF