1N5391G
Abstract: 1N5392G 1N5393G 1N5395G 1N5399G
Text: 1.5A Glass Passivated Rectifiers 1N5391G – 1N5399G 1.5A Glass Passivated Rectifiers Features • • • • • Glass passivated chip junction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 260°C/10 seconds
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1N5391G
1N5399G
DO-15
DO-15
MIL-STD-202E,
1N5391G
1N5392G
1N5393G
1N5395G
1N5399G
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1605PT
Abstract: a06 transistor HER1601PT HER1608PT 50-400V
Text: HER1601PT - HER1608PT 16.0 AMPS. Glass Passivated High Efficient Rectifiers TO-3P/TO-247AD Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions
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HER1601PT
HER1608PT
O-3P/TO-247AD
O-3P/TO-247AD
MIL-STD-750
10in-lbs.
125oC
50mVp-p
0-300V
00-1000V
1605PT
a06 transistor
HER1608PT
50-400V
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Untitled
Abstract: No abstract text available
Text: ABS15J thru ABS15M Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - Glass passivated junction - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability
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ABS15J
ABS15M
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
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Untitled
Abstract: No abstract text available
Text: ABS15J thru ABS15M Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - Glass passivated junction - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability
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ABS15J
ABS15M
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
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Untitled
Abstract: No abstract text available
Text: ABS15J thru ABS15M Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - Glass passivated junction - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability
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ABS15J
ABS15M
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
D1404010
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Untitled
Abstract: No abstract text available
Text: HERAF1601G thru HERAF1606G Taiwan Semiconductor CREAT BY ART Isolated Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - High efficiency, Low VF - High surge current capability - High current capability - High reliability
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HERAF1601G
HERAF1606G
E-326243
ITO-220AC
2011/65/EU
2002/96/EC
JESD22-B102
D1408007
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tj 2 94v0
Abstract: 3006PT 600-1000V a06 transistor 3004PT HER3001PT HER3008PT 3003PT
Text: HER3001PT - HER3008PT 30.0 AMPS. Glass Passivated High Efficient Rectifiers TO-3P/TO-247AD Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions
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HER3001PT
HER3008PT
O-3P/TO-247AD
O-3P/TO-247AD
MIL-STD-750.
10in-lbs.
125oC
0-300V
00-1000V
0-400V
tj 2 94v0
3006PT
600-1000V
a06 transistor
3004PT
HER3008PT
3003PT
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byw228
Abstract: MIL-STD-750 METHOD 2026 1N4949 RG3A DO-204AP BYw22 RG4M 1N4245 1N4249 1N5059
Text: GLASS PASSIVATED RECTIFIERS 0.2 AMPERE TO 3.0 AMPERES 50 VOLTS TO 1600 VOLTS INTRODUCTION TO GLASS RECTIFIERS The glass passivated rectifier is a hermetically sealed, cavity free, diffused junction rectifier with unsurpassed operating and surge capabilities at high temperature. An extremely pure specially developed glass applied in direct contact with the
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1N5415
1N5416
1N5550
1N5417
BYW73
1N5551
1N5552
1N5418
BYW74
1N5419
byw228
MIL-STD-750 METHOD 2026
1N4949
RG3A
DO-204AP
BYw22
RG4M
1N4245
1N4249
1N5059
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1N5614
Abstract: 1N5616 1N5618 1N5620 1N5622
Text: Certificate TH97/10561QM 1N5614 - 1N5622 Certificate TW00/17276EM GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * Glass passivated chip High forward surge current capability High reliability
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TH97/10561QM
1N5614
1N5622
TW00/17276EM
DO-41
UL94V-O
MIL-STD-202,
1N5616
1N5618
1N5620
1N5622
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diode 1n5624
Abstract: 1N5624 1N5625 1N5626 1N5627
Text: Certificate TH97/10561QM Certificate TW00/17276EM 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability
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TH97/10561QM
TW00/17276EM
1N5624
1N5627
UL94V-O
MIL-STD-202,
50mVp-p
diode 1n5624
1N5625
1N5626
1N5627
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m1a transistor
Abstract: data sheet m1a transistor 1N3611 1N3612 1N3613 1N3614 1N3657 prv200
Text: Certificate TH97/10561QM 1N3611 - 1N3614 1N3657 Certificate TW00/17276EM GLASS PASSIVATED JUNCTION SILICON RECTIFIERS M1A PRV : 200 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated chip High forward surge current capability High reliability
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TH97/10561QM
1N3611
1N3614
1N3657
TW00/17276EM
UL94V-O
MIL-STD-202,
m1a transistor
data sheet m1a transistor
1N3612
1N3613
1N3614
1N3657
prv200
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GBPC 50 DATA SHEET
Abstract: GBPC6005 GBPC610
Text: Certificate TH97/10561QM GBPC6005 - GBPC610 GLASS PASSIVATED SINGLEPHASE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes BR6 0.445 11.30 0.405 (10.30) 0.158 (4.00) 0.142 (3.60) FEATURES : * * * * * * * * Certificate TW00/17276EM Glass passivated chip
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TH97/10561QM
GBPC6005
GBPC610
TW00/17276EM
UL94V-O
GBPC 50 DATA SHEET
GBPC610
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Untitled
Abstract: No abstract text available
Text: HER301G thru HER308G Taiwan Semiconductor CREAT BY ART Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
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HER301G
HER308G
2011/65/EU
2002/96/EC
DO-201AD
AEC-Q101
JESD22-B102
D1405022
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Untitled
Abstract: No abstract text available
Text: EGP30A thru EGP30M Glass Passivated Junction High Efficiency Rectifiers Reverse Voltage 50 to 1000V FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction
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EGP30A
EGP30M
MIL-S-19500
DO-210AD
MIL-STD-750,
DO-201ADç
D0-201AD
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diode bridge 2504
Abstract: LOW FORWARD VOLTAGE DROP DIODE BRIDGE diode bridge 2506 2501 BRIDGE BR50 GBPC25005 GBPC2510
Text: Certificate TH97/10561QM GBPC25005 - GBPC2510 GLASS PASSIVATED SINGLEPHASE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 25 Amperes BR50 0.728 18.50 0.688(17.40) FEATURES : * * * * * * * Certificate TW00/17276EM Glass passivated junction chip High surge current capability
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TH97/10561QM
GBPC25005
GBPC2510
TW00/17276EM
diode bridge 2504
LOW FORWARD VOLTAGE DROP DIODE BRIDGE
diode bridge 2506
2501 BRIDGE
BR50
GBPC2510
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Untitled
Abstract: No abstract text available
Text: BA157G thru BA159G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
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BA157G
BA159G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
AEC-Q101
JESD22-B102
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diode RGP 30D
Abstract: diode RGP 30M RGP30A RGP30M
Text: LESHAN RADIO COMPANY, LTD. 1.FEATURES RGP30A thru RGP30M * Plastic package has Underwriters Laboratory Glass Passivated Junction Fast Switching Rectifiers Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction
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RGP30A
RGP30M
MIL-S-19500
DO-201AD,
50mVp-p
DO-201AD
diode RGP 30D
diode RGP 30M
RGP30M
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Untitled
Abstract: No abstract text available
Text: BA157G thru BA159G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
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BA157G
BA159G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1312026
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1.FEATURES RGP30A thru RGP30M * Plastic package has Underwriters Laboratory Glass Passivated Junction Fast Switching Rectifiers Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction
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RGP30A
RGP30M
MIL-S-19500
DO-201AD,
DO-41
DO-15
DO-201AD
26/tape
DO-201ADç
DO-201AD
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MB10S
Abstract: MB2S MB10S bridge
Text: MB2S thru MB10S Surface Mount Bridge Rectifiers PRODUCT SUMMARY Miniature Glass Passivated Single-Phase Reverse Voltage 200 to 1000 Volts FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated chip junctions
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MB10S
260oC/10
MIL-STD-750,
MB10S
MB2S
MB10S bridge
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Untitled
Abstract: No abstract text available
Text: INTRODUCTION TO GLASS PASSIVATED DIE LEVEL RECTIFIERS General Semiconductor’s GPP glass passivated pellet type rectifiers utilize a glass passivation on the chip level to enhance its devices performance. The difference is that the glass is applied to the wafer prior to die cutting to
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AMPG06X-ZZZ
O-220
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diode marking t34
Abstract: BYG70J T34 rectifier BYG70 BYG70D BYG70G
Text: Preliminary specification Philips Semiconductors Fast soft-recovery controlled avalanche rectifiers BYG70 series FEATURES DESCRIPTION • Glass passivated DO-214AC surface mountable package with glass passivated chip. • High maximum operating temperature
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BYG70
DO-214AC
DO-214AC;
OD106)
diode marking t34
BYG70J
T34 rectifier
BYG70D
BYG70G
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BYG60G
Abstract: BYG60 BYG60D BYG60J BYG60K BYG60M
Text: Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYG60 series FEATURES DESCRIPTION • Glass passivated DO-214AC surface mountable package with glass passivated chip. • High maximum operating temperature
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BYG60
DO-214AC
msa474
DO-214AC;
OD106)
711002b
010453b
BYG60G
BYG60D
BYG60J
BYG60K
BYG60M
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1B046
Abstract: voltage t
Text: RG4A THRU RG4J GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 50 to 600 Volts Current - 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded constructed rectifiers ♦ Glass passivated cavity-free junction
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MIL-S-19500
1B046
voltage t
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