GLASS PASSIVATED RECTIFIERS Search Results
GLASS PASSIVATED RECTIFIERS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CMG03A |
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General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT |
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CRG09A |
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General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT |
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CRG11B |
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General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT |
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CRG10A |
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General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT |
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CRG04A |
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General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT |
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GLASS PASSIVATED RECTIFIERS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1N5391G
Abstract: 1N5392G 1N5393G 1N5395G 1N5399G
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1N5391G 1N5399G DO-15 DO-15 MIL-STD-202E, 1N5391G 1N5392G 1N5393G 1N5395G 1N5399G | |
Contextual Info: INTRODUCTION TO GLASS PASSIVATED DIE LEVEL RECTIFIERS General Semiconductor’s GPP glass passivated pellet type rectifiers utilize a glass passivation on the chip level to enhance its devices performance. The difference is that the glass is applied to the wafer prior to die cutting to |
OCR Scan |
AMPG06X-ZZZ O-220 | |
diode marking t34
Abstract: BYG70J T34 rectifier BYG70 BYG70D BYG70G
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OCR Scan |
BYG70 DO-214AC DO-214AC; OD106) diode marking t34 BYG70J T34 rectifier BYG70D BYG70G | |
BYG60G
Abstract: BYG60 BYG60D BYG60J BYG60K BYG60M
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OCR Scan |
BYG60 DO-214AC msa474 DO-214AC; OD106) 711002b 010453b BYG60G BYG60D BYG60J BYG60K BYG60M | |
1B046
Abstract: voltage t
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OCR Scan |
MIL-S-19500 1B046 voltage t | |
1605PT
Abstract: a06 transistor HER1601PT HER1608PT 50-400V
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HER1601PT HER1608PT O-3P/TO-247AD O-3P/TO-247AD MIL-STD-750 10in-lbs. 125oC 50mVp-p 0-300V 00-1000V 1605PT a06 transistor HER1608PT 50-400V | |
Contextual Info: ABS15J thru ABS15M Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - Glass passivated junction - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability |
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ABS15J ABS15M J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 | |
Contextual Info: ABS15J thru ABS15M Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - Glass passivated junction - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability |
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ABS15J ABS15M J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 | |
Contextual Info: ABS15J thru ABS15M Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - Glass passivated junction - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability |
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ABS15J ABS15M J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1404010 | |
Contextual Info: HERAF1601G thru HERAF1606G Taiwan Semiconductor CREAT BY ART Isolated Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - High efficiency, Low VF - High surge current capability - High current capability - High reliability |
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HERAF1601G HERAF1606G E-326243 ITO-220AC 2011/65/EU 2002/96/EC JESD22-B102 D1408007 | |
tj 2 94v0
Abstract: 3006PT 600-1000V a06 transistor 3004PT HER3001PT HER3008PT 3003PT
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HER3001PT HER3008PT O-3P/TO-247AD O-3P/TO-247AD MIL-STD-750. 10in-lbs. 125oC 0-300V 00-1000V 0-400V tj 2 94v0 3006PT 600-1000V a06 transistor 3004PT HER3008PT 3003PT | |
byw228
Abstract: MIL-STD-750 METHOD 2026 1N4949 RG3A DO-204AP BYw22 RG4M 1N4245 1N4249 1N5059
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1N5415 1N5416 1N5550 1N5417 BYW73 1N5551 1N5552 1N5418 BYW74 1N5419 byw228 MIL-STD-750 METHOD 2026 1N4949 RG3A DO-204AP BYw22 RG4M 1N4245 1N4249 1N5059 | |
1N5614
Abstract: 1N5616 1N5618 1N5620 1N5622
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TH97/10561QM 1N5614 1N5622 TW00/17276EM DO-41 UL94V-O MIL-STD-202, 1N5616 1N5618 1N5620 1N5622 | |
diode 1n5624
Abstract: 1N5624 1N5625 1N5626 1N5627
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TH97/10561QM TW00/17276EM 1N5624 1N5627 UL94V-O MIL-STD-202, 50mVp-p diode 1n5624 1N5625 1N5626 1N5627 | |
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GBPC 50 DATA SHEET
Abstract: GBPC6005 GBPC610
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TH97/10561QM GBPC6005 GBPC610 TW00/17276EM UL94V-O GBPC 50 DATA SHEET GBPC610 | |
Contextual Info: HER301G thru HER308G Taiwan Semiconductor CREAT BY ART Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency |
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HER301G HER308G 2011/65/EU 2002/96/EC DO-201AD AEC-Q101 JESD22-B102 D1405022 | |
Contextual Info: EGP30A thru EGP30M Glass Passivated Junction High Efficiency Rectifiers Reverse Voltage 50 to 1000V FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction |
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EGP30A EGP30M MIL-S-19500 DO-210AD MIL-STD-750, DO-201ADç D0-201AD | |
Contextual Info: BA157G thru BA159G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency |
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BA157G BA159G 2011/65/EU 2002/96/EC DO-204AL DO-41) AEC-Q101 JESD22-B102 | |
diode bridge 2504
Abstract: LOW FORWARD VOLTAGE DROP DIODE BRIDGE diode bridge 2506 2501 BRIDGE BR50 GBPC25005 GBPC2510
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TH97/10561QM GBPC25005 GBPC2510 TW00/17276EM diode bridge 2504 LOW FORWARD VOLTAGE DROP DIODE BRIDGE diode bridge 2506 2501 BRIDGE BR50 GBPC2510 | |
Contextual Info: BA157G thru BA159G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency |
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BA157G BA159G 2011/65/EU 2002/96/EC DO-204AL DO-41) AEC-Q101 JESD22-B102 | |
diode RGP 30D
Abstract: diode RGP 30M RGP30A RGP30M
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RGP30A RGP30M MIL-S-19500 DO-201AD, 50mVp-p DO-201AD diode RGP 30D diode RGP 30M RGP30M | |
Contextual Info: BA157G thru BA159G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency |
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BA157G BA159G 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 D1312026 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. 1.FEATURES RGP30A thru RGP30M * Plastic package has Underwriters Laboratory Glass Passivated Junction Fast Switching Rectifiers Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction |
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RGP30A RGP30M MIL-S-19500 DO-201AD, DO-41 DO-15 DO-201AD 26/tape DO-201ADç DO-201AD | |
MB10S
Abstract: MB2S MB10S bridge
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MB10S 260oC/10 MIL-STD-750, MB10S MB2S MB10S bridge |