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    GHZ POWER FET Search Results

    GHZ POWER FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    GHZ POWER FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC2896

    Abstract: gm 8562 TC289 TC1806
    Text: TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz


    Original     		TC2896 TC2896 TC1806 gm 8562 TC289 PDF

    TIM1414-4A

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-4A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1414-4A ITIM1414-4A MW50290196 TIM1414-4A PDF

    TIM4951-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM4951-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4951-8 2-11D1B) MW50570196 TIM4951-8 PDF

    TIM1011-10

    Abstract: No abstract text available
    Text: TOSHIBA TIM1011-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G1dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM1011-10 2-11C1B) MW50140196 TIM1011-10 PDF

    TIM6472-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM6472-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM6472-4 2-11D1B) MW50840196 TIM6472-4 PDF

    TIM4450-16

    Abstract: TPM4450-16
    Text: TOSHIBA TIM4450-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4450-16 2-16G1B) MW50530196 TPM4450-16 TIM4450-16 PDF

    TIM4450-8

    Abstract: TPM4450-8
    Text: TOSHIBA TIM4450-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.5 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4450-8 2-11D1B) MW50510196 TPM4450-8 TIM4450-8 PDF

    TIM1414-5

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1414-5 MW50300196 Tim1414-5 PDF

    TIM3742-16

    Abstract: TPM3742-16
    Text: TOSHIBA TIM3742-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM3742-16 2-16G1B) MW50460196 TPM3742-16 TIM3742-16 PDF

    TPM3742-8

    Abstract: TIM3742-8
    Text: TOSHIBA TIM3742-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 10.0 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM3742-8 2-11D1B) MW50440196 TPM3742-8 TIM3742-8 PDF

    TIM5359-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM5359-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM5359-4 2-11D1B) MW50650196 TIM5359-4 PDF

    TIM1414-2

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM1414-2 MW50270196 TIM1414-2 PDF

    TIM4951-16

    Abstract: No abstract text available
    Text: TOSHIBA TIM4951-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 9.0 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4951-16 2-16G1B) MW50580196 TIM4951-16 PDF

    TIM4951-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM4951-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 10.0 dB at 4.9 GHz to 5.10 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4951-4 2-11D1B) MW50560196 TIM4951-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM1011-8 MW50120196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G 1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM0910-2 TransconductaMW50010196 MW50010196 TIM0910-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power ' PidB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G-|dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM4951-8 MW50570196 D02S405 TIM4951-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - ldB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM1213-8 2-11C1A) MW50250196 TCH725G G2231S TDT7250 TIM1213-8L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P-idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - GldB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM5964-8A 2-11D1B) TCH725D QQ22500 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM8596-8 2-11C1B) MW51190196 1EH725D PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM1414-4 MW50280196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM1011-5 MW50110196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM1112-4 MW50190196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM0910-10 2-11C1B) MW50050196 PDF