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    Abstract: No abstract text available
    Text: IRLR/U210A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on - 1 .5 Q ■ Lower Input Capacitance lD = 2.7 A ■ Improved Gate Charge ■ Extended Safe Operating Area D -P A K ■ Lower Leakage Current : 10 |iA (M ax.) @ VOS = 200V


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    PDF IRLR/U210A GG3T224