GFB50N03 Search Results

Contextual Info: GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 13mΩ ID 50A H C N ct E ET u R d T NF ro P New GE TM D TO-263AB G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. S D Mounting Pad Layout 0.320 (8.13)

GFB50N03

Contextual Info: GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 13mΩ ID 50A D G TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14) G PIN D S 0.055 (1.39) 0.066 (1.68)

GFB50N03

Contextual Info: GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves T A = 25°C unless otherwise noted Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 80 60 5.0V VGS=10V VDS = 10V 50 60 ID - Drain Current (A) ID - Drain Source Current (A)

t009

Contextual Info: GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 13mΩ ID 50A H C N t E ET c u R d T NF ro P GE New D TM TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.42 (10.66) 0.21 (5.33) Min. D 0.320 (8.13) 0.360 (9.14)

Contextual Info: GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 13mΩ ID 50A H C N ct E ET u R d T NF ro P New GE TM D TO-263AB G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.055 (1.40) 0.245 (6.22) Min. S D 0.320 (8.13) 0.360 (9.14) G PIN

GFB50N03

Contextual Info: ^fX, G e n e r a l v GFB50N03 S em ic o n d u c t o r N-Channel Enhancement-Mode MOSFET V d s 30V R d S ON 13mQ Id 50A ft« TO-263AB 0.380 ( 9 . 65) 0.420 ( 10. 67) 0 .160 ( 4 .06) 0.190 ( 4 .83 ) 0 . 0 4 5 ( 1. 14) 0. 0 5 5 ( 1.40 ) 0.21 (5 . 33) \ + - Min. “ ►]

GFB50N03

Contextual Info: GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 13mΩ ID 50A H C N ct E ET u R d T NF ro P New GE TM D TO-263AB G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.055 (1.40) 0.245 (6.22) Min. S D 0.320 (8.13) 0.360 (9.14) G PIN

GFB50N03

Contextual Info: GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 13mΩ ID 50A H C N t E ET c u R d T ENF ro P G New D TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14)

50n03

Abstract: 6030L 70N03 P transistor Comparison Tables 70N03
Contextual Info: Optim ization of the Performance of Power Supply Circuits That Use Low Voltage, Low On-Resistance M O SFETs By F. luan Hshieh, Sydney So, Jeff Chuc Low Voltage, Low On-Resistance Trench MOSFET Design Abstract A typical discrete double-diffused MOSFET or DMOS tran­

1N914 SOT-23

Abstract: BC337 SOT-23 BAT48 zener 1N4148 SOD323 BC337 sot23 gfp50n
Contextual Info: G e n e r a l Semiconductor Diodes and Transistors Visit General SemiconductorÕs Website at www.gensemi.com GENFETª Power MOSFETs Small Signal Switching Diodes Mfr.Õs Type N-Channel MOSFETs Leaded Mfr.Õs Type TO-220 TO-252 TO-263 Ñ Ñ Ñ Ñ Ñ Ñ Ñ Ñ

C549B

Abstract: C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Semiconductor’s part numbers, along with the Data Book in which they appear. For MOSFET page references, see the MOSFET Device Index on pages 5 in this book. 1 5KA6.8 thru 1.5KA43A .Zener/TVS

8SS138

Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
Contextual Info: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T