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    GF38 Price and Stock

    Taitien Electronics Co Ltd TZETADSAGF-38.400000

    XTAL OSC TCXO 38.4MHZ 3.3V SMD
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    DigiKey TZETADSAGF-38.400000 Reel 1,000 1,000
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    TZETADSAGF-38.400000 Digi-Reel 1,000 1
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    TZETADSAGF-38.400000 Cut Tape 1,000 1
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    Festo GF-3-8

    ROTARY DISTRIBUTOR
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    DigiKey GF-3-8 Bulk 1
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    Fix Supply BULK-CGF-388

    Cam and Groove Fitting - Polypro
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    Fix Supply BULK-CGF-386

    Cam and Groove Fitting - Polypro
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    DigiKey BULK-CGF-386 Bulk 1
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    OMRON Industrial Automation S82Y-FSG-F38

    S8FSG BRACKET FRONT MNT 600W
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    DigiKey S82Y-FSG-F38 Bulk 1
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    GF38 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC42V5964A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964A MGFC42V5964A Item-51]

    MGFS45V2735

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFS45V2735 MGFS45V2735 -45dBc 25deg

    MGFK44A4045

    Abstract: SCL4035
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK44A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFK44A4045 MGFK44A4045 00GHz 01GHz 20GHz14 21GHz SCL4035

    MGFC45V5964A

    Abstract: IM324
    Text: 27-March&#39;98 MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY MGFC45V5964A Notice : This is not a final specification. Some parametric limits are subject to change. 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched


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    PDF 27-March MGFC45V5964A MGFC45V5964A IM324

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V5964A 5.9 – 6.4 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC45V5964A MGFC45V5964A -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC45V3642A MGFC45V3642A -45dBc

    mgfs44v2735

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFS44V2735 MGFS44V2735 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V4450A 4.4 – 5.0 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC45V4450A MGFC45V4450A -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V4450 4.4 – 5.0 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC44V4450 MGFC44V4450 -45dBc

    MGFS45V2735

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFS45V2735 MGFS45V2735 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC45V6472A MGFC45V6472A -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC44V3642 MGFC44V3642 -42dBc

    MGFC50G

    Abstract: No abstract text available
    Text: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2


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    PDF MGFC50G5867 MGFC50G5867, CSTG-14855 MGFC50G

    SSD1963

    Abstract: SSD1963QL9 SSD1963 16 bit SSD1963G41
    Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1963 Advance Information 1215KB Embedded Display SRAM LCD Display Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. http://www.solomon-systech.com


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    PDF SSD1963 1215KB SSD1963 21-Nov-08 08-Dec-08 24-Nov-08 2002/95/EC SSD1963QL9 SSD1963 16 bit SSD1963G41

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V6472A MGFC42V6472A Item-51] June/2004

    MGFC42V5964A

    Abstract: mgfc42v5964
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964A MGFC42V5964A Item-51] June/2004 mgfc42v5964

    MGFC42V6472A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V6472A MGFC42V6472A Item-51]

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGFS44V2735

    Abstract: Q-35 2.7 3.5 s band
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIM INARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFS44V2735 2.7 - 3.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS44V2735 is an internally impedance-matched


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    PDF MGFS44V2735 MGFS44V2735 -45dBc 20th/Jan. Q-35 2.7 3.5 s band

    MGFK44A4045

    Abstract: No abstract text available
    Text: PRELIMINARY MITSUBISHI s e m ic o n d u c t o r <GaAs fet> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING T he M G F K 4 4 A 4 0 4 5 is an internally impedance matched G aAs power F E T especially Unit : millimeters


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    PDF MGFK44A4045 MGFK44A4045 gf-38 25ohm FK44A4045

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F S 45V 2527 pB EU .toys*t0; •,g* _ 2 .5 2 .7 GHz BAND 2 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F S 4 5 V 2 5 2 7 is an internally impedance-matched U n it m tiiim e te rs inches!


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFC45V3642A 3.6 DESCRIPTION - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET u n it : m m OUTLINE The M G F C 45V 3642A is an in ternally im ped ance-m a tched


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    PDF MGFC45V3642A

    MGFC44V

    Abstract: MGFC44V6472
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC44V6472 6 . 4 — 7.2G H Z BAND 2 4 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION T h e M G F C 4 4 V 6 4 7 2 is an in te rn a lly OUTLINE DRAWING im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 6 .4 ~


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    PDF MGFC44V6472 MGFC44V6472 42dBc MGFC44V

    3642G

    Abstract: MGFC44V3642
    Text: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2


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    PDF MGFC44V3642 MGFC44V3642 -42dBc digita27 90GHz 25deg Dec-98 3642G