MGFC42V5964A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC42V5964A
MGFC42V5964A
Item-51]
|
MGFS45V2735
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFS45V2735
MGFS45V2735
-45dBc
25deg
|
MGFK44A4045
Abstract: SCL4035
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK44A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFK44A4045
MGFK44A4045
00GHz
01GHz
20GHz14
21GHz
SCL4035
|
MGFC45V5964A
Abstract: IM324
Text: 27-March'98 MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY MGFC45V5964A Notice : This is not a final specification. Some parametric limits are subject to change. 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched
|
Original
|
PDF
|
27-March
MGFC45V5964A
MGFC45V5964A
IM324
|
Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC45V5964A 5.9 – 6.4 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC45V5964A
MGFC45V5964A
-45dBc
|
Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC45V3642A
MGFC45V3642A
-45dBc
|
mgfs44v2735
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFS44V2735
MGFS44V2735
-45dBc
|
Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC45V4450A 4.4 – 5.0 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC45V4450A
MGFC45V4450A
-45dBc
|
Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC44V4450 4.4 – 5.0 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC44V4450
MGFC44V4450
-45dBc
|
MGFS45V2735
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFS45V2735
MGFS45V2735
-45dBc
|
Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC45V6472A
MGFC45V6472A
-45dBc
|
Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC44V3642
MGFC44V3642
-42dBc
|
MGFC50G
Abstract: No abstract text available
Text: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2
|
Original
|
PDF
|
MGFC50G5867
MGFC50G5867,
CSTG-14855
MGFC50G
|
SSD1963
Abstract: SSD1963QL9 SSD1963 16 bit SSD1963G41
Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1963 Advance Information 1215KB Embedded Display SRAM LCD Display Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. http://www.solomon-systech.com
|
Original
|
PDF
|
SSD1963
1215KB
SSD1963
21-Nov-08
08-Dec-08
24-Nov-08
2002/95/EC
SSD1963QL9
SSD1963 16 bit
SSD1963G41
|
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC42V6472A
MGFC42V6472A
Item-51]
June/2004
|
MGFC42V5964A
Abstract: mgfc42v5964
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC42V5964A
MGFC42V5964A
Item-51]
June/2004
mgfc42v5964
|
MGFC42V6472A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC42V6472A
MGFC42V6472A
Item-51]
|
C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
|
Original
|
PDF
|
M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
|
MGFS44V2735
Abstract: Q-35 2.7 3.5 s band
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIM INARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFS44V2735 2.7 - 3.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS44V2735 is an internally impedance-matched
|
OCR Scan
|
PDF
|
MGFS44V2735
MGFS44V2735
-45dBc
20th/Jan.
Q-35
2.7 3.5 s band
|
MGFK44A4045
Abstract: No abstract text available
Text: PRELIMINARY MITSUBISHI s e m ic o n d u c t o r <GaAs fet> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING T he M G F K 4 4 A 4 0 4 5 is an internally impedance matched G aAs power F E T especially Unit : millimeters
|
OCR Scan
|
PDF
|
MGFK44A4045
MGFK44A4045
gf-38
25ohm
FK44A4045
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F S 45V 2527 pB EU .toys*t0; •,g* _ 2 .5 2 .7 GHz BAND 2 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F S 4 5 V 2 5 2 7 is an internally impedance-matched U n it m tiiim e te rs inches!
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFC45V3642A 3.6 DESCRIPTION - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET u n it : m m OUTLINE The M G F C 45V 3642A is an in ternally im ped ance-m a tched
|
OCR Scan
|
PDF
|
MGFC45V3642A
|
MGFC44V
Abstract: MGFC44V6472
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC44V6472 6 . 4 — 7.2G H Z BAND 2 4 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION T h e M G F C 4 4 V 6 4 7 2 is an in te rn a lly OUTLINE DRAWING im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 6 .4 ~
|
OCR Scan
|
PDF
|
MGFC44V6472
MGFC44V6472
42dBc
MGFC44V
|
3642G
Abstract: MGFC44V3642
Text: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2
|
OCR Scan
|
PDF
|
MGFC44V3642
MGFC44V3642
-42dBc
digita27
90GHz
25deg
Dec-98
3642G
|