GES RG 58 Search Results

KTD-166

Contextual Info: GSD REVISIONS ch an ges CN 34481 C REDRAWN KH 04/22/93 OJ co o ho CN JCA 10 ho 35064 C 11/22/93 o I o cn o 4^ NOTES: 1. FOR USE WITH RG-58, 141 k 303/U CABLE. 2. FOR CABLING INSTRUCTIONS SEE CP-465. 3. FOR CABLE TRIMMING USE KTJ-123 & KTD-166. 4. FOR CRIMPING USE DIE KTH-2001.

IXLH35N140A

Contextual Info: ÖIXYS High Voltage, High speed IGBT IXLH 35N140 A V CES = 1400 V ^C25 = 58 A = 3.6 V vCE sat Short Circuit SOA Capability P re lim in a ry d a ta ) °\^ *S OE Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 1400 V V CGR Td = 25°C to 150°C; RGE = 1 M£2

35n120

Abstract: IXLH35N120A 35N120A 35n120 IGBT
Contextual Info: IXLH 35N120 A VCES High Voltage, High speed IGBT = 1200 V = 58 A = 3.6 V ^C25 V CE sat Short Circuit SOA Capability P re lim in a ry d a ta Maximum Ratings Symbol Test Conditions v CES T j = 25°C to 150°C 1200 V v CGR T.J = 25°C to 150°C;1 RGE „ = 1 M fi

IXLK35N120AU1

Contextual Info: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous

ges rg 58

Contextual Info: SEMiX 202GB128D Absolute Maximum Ratings Symbol Conditions IGBT  0 056 8 ":.     SEMiX 2 SPT IGBT Modules SEMiX 202GB128D Target Data Features                  ! "  !     

Contextual Info: SEMiX 603GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT  $ $ $#! 4 -6     SEMiX 3s   ' 6       %   '( 8. )6 -  &(. )   '( 8. )6 -  &9( )   &  Values Units 1. 95. ('. 8. 1&.

Contextual Info: SEMiX 603GB066HD . Absolute Maximum Ratings Symbol Conditions IGBT  $ $ $#! 4 -6     SEMiX 3   ' 6       %   '( 8. )6 -  &(. )   '( 8. )6 -  &9( )   &  Values Units 1. 95. ('. 8. 1&.

OF IGBT

Contextual Info: SEMiX 603GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT  $ $ $#! 4 -6     SEMiX 3s   ' 6       %   '( 8. )6 -  &(. )   '( 8. )6 -  &9( )   &  Values Units 1. 95. ('. 8. 1&.

Contextual Info: SEMiX 101GD066HDs Absolute Maximum Ratings Symbol Conditions IGBT  $ $ $#! 4 -6   SEMiX 13s Trench IGBT Modules SEMiX 101GD066HDs Target Data Features                          

603GAL066HD

Abstract: 603GB066HD semix igbt GAL 603GAR066HD
Contextual Info: SEMiX 603GB066HD . Absolute Maximum Ratings Symbol Conditions IGBT  $ $ $#! 4 -6     SEMiX 3   ' 6       %   '( 8. )6 -  &(. )   '( 8. )6 -  &9( )   &  Values Units 1. 95. ('. 8. 1&.

Contextual Info: APT30GT60KR A dvanced W .A P o w e r Te c h n o l o g y 6o o v 58a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology theThunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

35N120

Abstract: 35n120 IGBT IXLH35N120A
Contextual Info: High Voltage, High speed IGBT IXLH 35N120 A VCES = 1200 V = 58 A = 3.6 V IC25 VCE sat Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES

Contextual Info: High Voltage, High speed IGBT IXLH 35N140 A V CES = 1400 V ^C25 = 58 A = 3.6 V v_ Short Circuit S O A C apability Preliminary data °V^S OE Maximum Ratings V CES T j = 25°C to 150°C 1400 V vCGR T j = 25°C to 150°C; RGe = 1 MQ 1400 V V GES Continuous

IXLH35N140A

Contextual Info: High Voltage, High speed IGBT IXLH 35N140 A VCES = 1400 V = 58 A = 3.6 V IC25 VCE sat Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1400 V VGES

SMBH1G400US60

Contextual Info: Prelim inary SMBH1G400US60 IG B T M O D U L E FE A TU R ES • High Speed Switching • Low Conduction Loss : V CE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S Package code : 7-PM-EA

SMBL1G400US60

Contextual Info: Prelim inary SMBL1G400US60 IG B T M O D U L E FE A TU R ES • High Speed Switching • Low Conduction Loss : V CE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S Package code : 7-PM-EA

SM2G400US60

Contextual Info: Prelim inary SM2G400US60 IG B T M O D U L E FE A TU R ES • High Speed Switching • Low Conduction Loss : V CE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S • • • • • Package code : 7-PM-EA

RM18T

Abstract: IXLK35N120AU1
Contextual Info: DIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V IC25 VCE sat High Short Circuit SOA Capability Symbol Test C onditions v CES Tj = 25°C to 150°C 1200 V V CGR T.J = 25°C to 150°C; RrP = 1 M£2 tit 1200 V V GES Continuous +20 V V GEM Transient

Contextual Info: POWEREX INC 3=iE D m 7 2 ^ 2 1 WM/BREX GD0MÔ47 O JHPRX ID 1 2 6 0 4 0 * Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Dual IGBTMOD Powerex, Europe, S.A. 428 Avenue G. Durand, B P 1 0 7 ,72003 Le Mans, France (43)41.14.14 P o W 6 t M o d u lB

Contextual Info: FZ 600 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 600 A 1 ms 1200 A O Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,057 °C/W 2200 W V ge 20 V Inversdiode

C15VL

Contextual Info: DIXYS IGBT IXSH 25N100 Low V,CE sat vCES = 1000 V 1025 = 50 V CE(Sa„ = 3.5 V Short Circuit SOA Capability Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V CGR T j = 2 5 °C to 1 5 0 °C ;R GE=1 M ii 1000 V GES Continuous +20 V GEM Transient i3 0

Contextual Info: SGP10N60RUF FEATURES N-CHANNEL IGBT TO-220 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 1.95 V @ lc=10A * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls

ixsm

Abstract: 25N100 D-68623 25N100A N100
Contextual Info: VCES Low VCE sat IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 VCE(sat) 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: Preliminary SM2G400US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • Package code : 7-PM-EA