AC188
Abstract: AD156 AUY10 OC23 AC188-01 2N4106 AD157 ac128 2S8473 ADY20
Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 < NthAmerSemi Germanium See Index Space Power SemieonTech Solid Stine Solid Stine Solid Stine Solid Stine NthAmerSemi ~g~~~ ~ermanlum Germanium NthAmerSemi NthAmerSemi Germanium Germanium NthAmerSemi
|
Original
|
PDF
|
ADY10
2N2786
2N1940
2S8180
2S8466
2S863
2S8467
ADY12
AC188
AD156
AUY10
OC23
AC188-01
2N4106
AD157
ac128
2S8473
ADY20
|
ADZ12
Abstract: DTG-1200 DTG-2400 germanium DTG2400 adz11 dtg1200 2N513A 2N2075A 2N2075
Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 30 40 See Index See Index See Index Germanium Germanium SemieonTeeh Germanium See Index See Index See Index 15 15 15 15 15 15 15 15 15 15 ~~~~~~ ~eelndex ~~ 2N314S 2N2079 2N2079A 2N2S12 2Nl0318
|
Original
|
PDF
|
2Nl147A
2NS778
2N1358A
DTG2100
COT9408
DTG1040
2NS788
2N2075
2N2075A
2N314S
ADZ12
DTG-1200
DTG-2400
germanium
DTG2400
adz11
dtg1200
2N513A
|
ad143
Abstract: ASZ15 ASZ18 AUY37 ASZ16 GT906AM AUY35 AU113 ASZ17 AUY22A
Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 20 30 35 40 45 50 60 65 70 -75 80 - 85 90 Min See Index Germanium NthAmerSemi NthAmerSemi CentralSemi NthAmerSemi Germanium See Index See Index Germanium Max .(Hz) ~Y.D~a ~ml 75 250 60 22 25 25 25 32 32
|
Original
|
PDF
|
2N5900
MP3730A
ADY25
AD159
AD138
ASZ17
ASZ18
CTP1306
ad143
ASZ15
AUY37
ASZ16
GT906AM
AUY35
AU113
AUY22A
|
Untitled
Abstract: No abstract text available
Text: SGA-1263 Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) Preliminary DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar
|
Original
|
PDF
|
SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
EDS-100935
SGA-1263Z
|
SGA-1263Z
Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
|
Original
|
PDF
|
SGA1263Z
DCto4000MH
DCto4000MHz
OT-363
SGA1263Z
50GHz
DS100916
SGA-1263Z
SGA1263ZSQ
trace code marking RFMD
InP HBT transistor
PHEMT marking code a
|
TO36 package
Abstract: 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium
Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 - 25 30 >= 40 45 50 60 See Index See Index See Index See Index Germanium See Index See Index See Index See Index Germanium 15 15 15 15 15 15 15 15 15 15 ~~n~7 ~elnClex ~~ 2N1557A MP1557 2N2078 2N2078A
|
Original
|
PDF
|
2N173
2N1358
2N174A
2N1549
MP1549
2N1549A
2N677
2N1553
2N1553A
MP1553
TO36 package
2N2076
pnp germanium to36
TO36
TO41
dtg1210a
2N2076A
2N1560
2N1970
germanium
|
Untitled
Abstract: No abstract text available
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
|
Original
|
PDF
|
SGA1263Z
DCto4000MH
DCto4000MHz
OT-363
SGA1263Z
50GHz
DS111011
|
SGA1263Z
Abstract: SGA1263
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
|
Original
|
PDF
|
SGA1263Z
DCto4000MH
SGA1263Z
DCto4000MHz
OT-363
50GHz
DS111011
SGA1263
|
SMO-14
Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication
|
Original
|
PDF
|
MIL-S-19500A1B(
2N425
2Nb26
-AO07
SMO-14
SLG 2016 D
2SK26
2N42
N4 TAM
marking aaae
2n427
GERMANIUM SMALL SIGNAL TRANSISTORS
2N426
|
nte102
Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:
|
Original
|
PDF
|
NTE102
NTE103
200mV
nte102
NTE103
vpt 20
germanium transistors NPN
NTE10-3
|
NTE105
Abstract: TO36 package pnp germanium to36 Germanium power
Text: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
|
Original
|
PDF
|
NTE105
NTE105
TO36 package
pnp germanium to36
Germanium power
|
NTE131MP
Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.
|
Original
|
PDF
|
NTE131
NTE155
100mA
NTE131MP
NTE155
NTE131
germanium transistors NPN
Germanium power
|
germanium transistor pnp
Abstract: nte213
Text: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:
|
Original
|
PDF
|
NTE213
NTE213
500mA
germanium transistor pnp
|
"PNP Transistor"
Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
|
Original
|
PDF
|
NTE226
NTE226
200mA
200mA,
"PNP Transistor"
germanium transistor pnp
GERMANIUM TRANSISTOR
pnp germanium transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
pnp transistor 6V
transistor 200ma pnp
GERMANIUM
Germanium diode data sheet
germanium pnp transistor
|
|
MARKING HBT
Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
|
Original
|
PDF
|
SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
DS090924
SGA-1263
MARKING HBT
SGA-1263Z
trace code marking RFMD
SGA1263
18 sot-363 rf power amplifier
InP HBT transistor
|
Untitled
Abstract: No abstract text available
Text: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.
|
Original
|
PDF
|
2N4277
-15Ade,
-20Vde,
|
Untitled
Abstract: No abstract text available
Text: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.
|
Original
|
PDF
|
PC3244TB
R09DS0015EJ0100
PC3244TB
|
Untitled
Abstract: No abstract text available
Text: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.
|
Original
|
PDF
|
PC3244TB
R09DS0015EJ0100
PC3244TB
|
germanium Power Transistor
Abstract: Vcb-60V NTE27 Germanium power
Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
|
Original
|
PDF
|
NTE27
NTE27
germanium Power Transistor
Vcb-60V
Germanium power
|
germanium Power Transistor
Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
|
Original
|
PDF
|
NTE27
NTE27
germanium Power Transistor
pnp germanium transistor
germanium transistor pnp
GERMANIUM TRANSISTOR
Germanium power
|
NTE104M
Abstract: NTE104MP NTE104 transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor
Text: NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
|
Original
|
PDF
|
NTE104
NTE104
NTE104M
NTE104MP
transistor germanium
germanium pnp transistor
Germanium power
50V 1A PNP power transistor
|
MP3731
Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
Text: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed
|
OCR Scan
|
PDF
|
MP2100A,
MP2200A,
MP2300A,
MP2400A
MP2000A
MP3730
MP3731
MP3730
MP3731
MP2200A
O446
Motorola germanium transistor pnp
MP2100A
MP2300A
MP2400A
germanium transistors PNP
|
MR830
Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
Text: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —
|
OCR Scan
|
PDF
|
MP600
MP603
MP600
MP601
MP602
MP603
MR830
germanium power transistors
Germanium power
|
motorola MP2400A
Abstract: MP2100A Motorola germanium transistor pnp MP2200A AN-415 MP2000A MP2300A MP2400A Germanium power
Text: MP2000A GERMANIUM MP2100A MP2200A MP2300A MP2400A PNP GERMANIUM POWER TRANSISTORS 25 AMPERES ADE POWER TRANSISTORS . . . designed fo r high-voltage switching, and pow er converter 30-120 VOLTS 106 WATTS applications. • A lloy-D iffused Epitaxial Construction
|
OCR Scan
|
PDF
|
MP2000A
MP2100A
MP2200A
MP2300A
MP2400A
MP2400A
motorola MP2400A
Motorola germanium transistor pnp
AN-415
Germanium power
|