GERMANIUM PNP TRANSISTOR Search Results

GERMANIUM PNP TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

GERMANIUM PNP TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE131MP Abstract: NTE155 NTE131 germanium transistors NPN Germanium power Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.	Original	PDF	NTE131 NTE155 100mA NTE131MP NTE155 NTE131 germanium transistors NPN Germanium power
SMO-14 Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426 Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication	Original	PDF	MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
nte102 Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3 Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:	Original	PDF	NTE102 NTE103 200mV nte102 NTE103 vpt 20 germanium transistors NPN NTE10-3
germanium transistor pnp Abstract: nte213 Text: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:	Original	PDF	NTE213 NTE213 500mA germanium transistor pnp
NTE105 Abstract: TO36 package pnp germanium to36 Germanium power Text: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V	Original	PDF	NTE105 NTE105 TO36 package pnp germanium to36 Germanium power
"PNP Transistor" Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V	Original	PDF	NTE226 NTE226 200mA 200mA, "PNP Transistor" germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
germanium Power Transistor Abstract: Vcb-60V NTE27 Germanium power Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V	Original	PDF	NTE27 NTE27 germanium Power Transistor Vcb-60V Germanium power
germanium Power Transistor Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V	Original	PDF	NTE27 NTE27 germanium Power Transistor pnp germanium transistor germanium transistor pnp GERMANIUM TRANSISTOR Germanium power
pnp germanium to36 Abstract: NTE330 Germanium power Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.	Original	PDF	NTE330 NTE330 pnp germanium to36 Germanium power
NTE104M Abstract: NTE104MP NTE104 transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor Text: NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE104 NTE104 NTE104M NTE104MP transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor
NTE158 Abstract: germanium pnp transistor Germanium power Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V	Original	PDF	NTE158 NTE158 300mA germanium pnp transistor Germanium power
NTE158 Abstract: germanium audio Germanium power Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low−power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V	Original	PDF	NTE158 NTE158 300mA germanium audio Germanium power
NTE158 Abstract: Germanium power Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V	Original	PDF	NTE158 NTE158 300mA Germanium power
NTE121MP Abstract: NTE121 GERMANIUM ie 10a germanium pnp transistor Germanium power Text: NTE121 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE121 NTE121 NTE121MP GERMANIUM ie 10a germanium pnp transistor Germanium power

NTE102A Abstract: nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium Text: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE102A NTE103A 300mA 500mA, NTE102A nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium
oscillator pnp 800MHZ Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power Text: NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V	Original	PDF	NTE160 NTE160 900MHz. 100MHz 450kHz 800MHz oscillator pnp 800MHZ "PNP Transistor" transistor germanium Germanium power
MP3731 Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP Text: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed	OCR Scan	PDF	MP2100A, MP2200A, MP2300A, MP2400A MP2000A MP3730 MP3731 MP3730 MP3731 MP2200A O446 Motorola germanium transistor pnp MP2100A MP2300A MP2400A germanium transistors PNP
transistor WL 431 Abstract: 2N700A BUV pnp 50a MW1131 Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,	OCR Scan	PDF	MIL-S-19500/123A -S-19500/123 2N700A -65to 70MHz 5961-A085 transistor WL 431 2N700A BUV pnp 50a MW1131
pnp germanium transistor Abstract: transistor YA 2N398A Transistor 2N398 pnp germanium transistor 2N398 transistor case To 105 2N398 Germanium Transistor 2N398B germanium transistor pnp Text: 2N398 2N398A 2N398B ♦I Central Sem iconductor Corp. Central semiconductor Corp. PNP GERMANIUM TRANSISTOR 145 Adams Avenue Hauppauge, New York 11 788 JEDEC TO-5 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N398 Series types are PNP Germanium Transistors designed	OCR Scan	PDF	2N398 2N398A 2N398B 2N398 2N398A 2N398B 11MS2 pnp germanium transistor transistor YA Transistor 2N398 pnp germanium transistor 2N398 transistor case To 105 Germanium Transistor germanium transistor pnp
CBC 557 C Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor Text: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB	OCR Scan	PDF
AF279 Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF Text: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB	OCR Scan	PDF
AF280 Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:	OCR Scan	PDF
AF 109 R Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB	OCR Scan	PDF	AF109R AF 109 R AF109R af109 germanium-pnp-mesa-hf-transistor
AF239 Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239 Text: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz	OCR Scan	PDF

GERMANIUM PNP TRANSISTOR Search Results

GERMANIUM PNP TRANSISTOR Result Highlights (5)

GERMANIUM PNP TRANSISTOR Datasheets Context Search

NTE131MP

SMO-14

nte102

germanium transistor pnp

NTE105

"PNP Transistor"

germanium Power Transistor

germanium Power Transistor

pnp germanium to36

NTE104M

NTE158

NTE158

NTE158

NTE121MP

NTE102A

oscillator pnp 800MHZ

MP3731

transistor WL 431

pnp germanium transistor

CBC 557 C

AF279

AF280

AF 109 R

AF239