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    GEOMETRY 450 Search Results

    GEOMETRY 450 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    zp42915tc

    Abstract: 78141 ZP-42915-TC ZJ-42915-TC XW-41003-TC transformer EI lamination 40907 tc transformer core 42206-tc EER 42*15 ZP-42206-TC-PO
    Contextual Info: Part Number Identification – How to Order UNGAPPED CORES and TOROIDS 3. 1. Typical Part Number S D-4 30 19 -UG-xx Coating/Shape Code See Note 2 Geometry Code For standard ungapped cores a two letter code indicates the geometry. Unit of Code Geometry Example


    Original     		0P-44317- 0J-42516- ZJ-42915- 0J-41106- DF-42311- 41510N zp42915tc 78141 ZP-42915-TC ZJ-42915-TC XW-41003-TC transformer EI lamination 40907 tc transformer core 42206-tc EER 42*15 ZP-42206-TC-PO PDF

    3N74

    Abstract: 3n70 3N68 3n103
    Contextual Info: NPN/PNP DUAL EMITTK CHOPPER BI-POLAR TRANSISTORS 3N62 / „ to i 3N136 GEOMETRY 450 GEOMETRY 481 3N74-3N76 AVAILABLE AS JANJAN-TXJANÎX-V ' ä S S E S i S S “ ,0 LOW rec(sat) 8 Ohms (typ) ELECTRICAL CHARACTERISTICS AT 25 JC FREE-AIR TEMPERATURE •Vk o ■vcao


    OCR Scan     		3N136 3N74-3N76) 3N68A* 3N915 3N74-3N76fAvailab 3N74 3n70 3N68 3n103 PDF

    BU 508 AF

    Abstract: til 431 TAG 8534 STI SMART POSITIONER Til 160 ET 81 K ic 8279 TIL 123 et 455 MICK 494 CN
    Contextual Info: 7.5” TI-92 Vejledning 10” TI-92 VEJLEDNING TI-92 Geometry er udviklet af TI og forfatterne til Cabri Geometry IIè, der arbejder på Université Joseph Fourier, Grenoble, Frankrig. TI-92 Symbolic Manipulation er udviklet af TI og forfatterne til programmet


    Original     		TI-92 TI-92 28-Jan-99 BU 508 AF til 431 TAG 8534 STI SMART POSITIONER Til 160 ET 81 K ic 8279 TIL 123 et 455 MICK 494 CN PDF

    AM0608-450

    Contextual Info: AM0608-450 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 445 W MIN. WITH 6.9 dB GAIN .400 x .500 2LFL S038 hermetically sealed


    Original     		AM0608-450 AM0608-450 PDF

    pnp for 2n3019

    Abstract: 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2C3019 2N3019S
    Contextual Info: Data Sheet No. 2C3019 Generic Packaged Parts: Chip Type 2C3019 Geometry 4500 Polarity PNP 2N3019, 2N3057 Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general


    Original     		2C3019 2N3019, 2N3057 2C3019 2N3019S, 2N3019UB, 2N3057, 2N3057A, pnp for 2n3019 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2N3019S PDF

    AM0608-450

    Contextual Info: AM0608-450 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 445 W MIN. WITH 6.9 dB GAIN .400 x .500 2LFL S038 hermetically sealed


    Original     		AM0608-450 AM0608-450 PDF

    2N1893S

    Abstract: 2C1893 2N1893 2N1893UB SD1893 SD1893F SQ1893 SQ1893F chip type geometry
    Contextual Info: Data Sheet No. 2C1893 Generic Packaged Parts: Chip Type 2C1893 Geometry 4500 Polarity NPN 2N1893, 2N1893S Chip type 2C1893 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for medium


    Original     		2C1893 2N1893, 2N1893S 2C1893 2N1893S, 2N1893UB, SD1893, SD1893F, 2N1893S 2N1893 2N1893UB SD1893 SD1893F SQ1893 SQ1893F chip type geometry PDF

    bga 0,8 mm

    Abstract: tray matrix bga AN-1126 MO-151 fine BGA thermal profile an1126
    Contextual Info: National Semiconductor Application Note 1126 December 2000 CONTENTS Introduction Package Overview PBGA Construction EBGA Construction Package Handling/Shipping Media Design Recommendations Solder Pad Geometry Escape Routing Guidlines Via Density Assembly Recommendations


    Original     		PDF

    2N3019

    Abstract: 2n3019 transistor
    Contextual Info: Data Sheet No. 2N3019 Generic Part Number: 2N3019 Type 2N3019 Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.


    Original     		2N3019 MIL-PRF-19500/391 MIL-PRF-19500/391 2N3019 2n3019 transistor PDF

    2N3057A

    Contextual Info: Data Sheet No. 2N3057A Generic Part Number: 2N3057A Type 2N3057A Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-46 case.


    Original     		2N3057A MIL-PRF-19500/391 MIL-PRF-19500/391 2N3057A PDF

    3N123

    Contextual Info: ^zmi-donauckoi , inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 LOW COST 3N123 SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450 » t-.in : 001 ELECTRICAL DATA ABSOLUTE MAXIMUM RATING


    Original     		3N123 10QMA 3N123 PDF

    2N3700UB

    Contextual Info: Data Sheet No. 2N3700UB Generic Part Number: 2N3700UB Type 2N3700UB Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • General-purpose low power silicon transistor. • Housed in a cersot case. • Also available in chip form using


    Original     		2N3700UB MIL-PRF-19500/391 MIL-PRF-19500/391 2N3700UB PDF

    transistor PT 4500

    Abstract: 2N72 2N720A
    Contextual Info: Data Sheet No. 2N720A Generic Part Number: 2N720A Type 2N720A Geometry 4500 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/182 Features: • • • • General-purpose low-power NPN transistor. Housed in a TO-18 case. Also available in chip form using


    Original     		2N720A MIL-PRF-19500/182 MIL-PRF-19500/182 MIL-S-19500/182 x10-4 transistor PT 4500 2N72 2N720A PDF

    B2060G

    Contextual Info: MBRJ2060CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		MBRJ2060CTG MBRJ2060CT/D B2060G PDF

    2N3019S

    Abstract: 2N3019
    Contextual Info: Data Sheet No. 2N3019S Generic Part Number: 2N3019 Type 2N3019S Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case.


    Original     		2N3019S 2N3019 MIL-PRF-19500/391 MIL-PRF-19500/391 2N3019S 2N3019 PDF

    transistor PT 4500

    Abstract: 2N1893
    Contextual Info: Data Sheet No. 2N1893 Generic Part Number: 2N1893 Type 2N1893 Geometry 4500 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/182 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-5 case. • Also available in chip form using


    Original     		2N1893 MIL-PRF-19500/182 MIL-PRF-19500/182 5x10-4 MIL-S-19500/182D transistor PT 4500 2N1893 PDF

    2N3700

    Abstract: 2n3700 geometry
    Contextual Info: Data Sheet No. 2N3700 Generic Part Number: 2N3700 Type 2N3700 Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • General-purpose low power silicon transistor. • Housed in TO-46 case. • Also available in chip form using


    Original     		2N3700 MIL-PRF-19500/391 MIL-PRF-19500/391 2N3700 2n3700 geometry PDF

    b20100

    Abstract: MBRF20100CTG
    Contextual Info: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		MBRF20100CT MBRF20100CT/D b20100 MBRF20100CTG PDF

    b20100

    Abstract: MBRF20100CTG 221D-03 B20100 diode
    Contextual Info: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		MBRF20100CT MBRF20100CT/D b20100 MBRF20100CTG 221D-03 B20100 diode PDF

    b2060

    Abstract: B2060A
    Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		MBRF2060CT MBRF2060CT/D b2060 B2060A PDF

    2N1893S

    Abstract: 2N1893 transistor PT 4500
    Contextual Info: Data Sheet No. 2N1893S Generic Part Number: 2N1893 Type 2N1893S Geometry 4500 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/182 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-39 case. • Also available in chip form using


    Original     		2N1893S 2N1893 MIL-PRF-19500/182 MIL-PRF-19500/182 MIL-S-19500/182D 2N1893S 2N1893 transistor PT 4500 PDF

    B20100G

    Abstract: B20100G diode MBRF20100CTG AKA B20100G b20100 b20100 g B20100G AKA B20100G on aka AKA B20100 B20100G diode AKA
    Contextual Info: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		MBRF20100CT MBRF20100CT/D B20100G B20100G diode MBRF20100CTG AKA B20100G b20100 b20100 g B20100G AKA B20100G on aka AKA B20100 B20100G diode AKA PDF

    b2060

    Abstract: 221D-03
    Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		MBRF2060CT MBRF2060CT/D b2060 221D-03 PDF

    b2060

    Contextual Info: MBRF2060CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		MBRF2060CT AN1040. b2060 PDF