MDC 2301
Abstract: 74ACT04 J330 LM108 MIL-HDBK-263 National semiconductor die fr003 NSC die
Text: Name: ME MAS-2301 Department Specification Title:" GENERAL PROCEDURE FOR DIE AND WAFER SALES " Rev:"2.0" Page: 1 TABLE OF CONTENTS 1. PURPOSE 2 2. APPLICABLE DOCUMENTS 2 3. GENERAL INFORMATION 2 4. DIE AND WAFER PACKAGING SPECIFICATIONS 3 5. GENERAL INSPECTION CRITERIA
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MAS-2301
MDC 2301
74ACT04
J330
LM108
MIL-HDBK-263
National semiconductor die
fr003
NSC die
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PDF
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IPC-6012
Abstract: IPC-D-279 IPC-6013 IPC-6016 IPC-2223 ipc 7094 IPC-7094 IPC-2226 IPC-6011 IPC-7525
Text: Maxim > App Notes > General Engineering Topics Prototyping and PC- Board Layout Wireless and RF Keywords: chip scale package, flip chip, CSP, UCSP, U- CSP, BGA, WLCSP May 01, 2008 APPLICATION NOTE 1891 Wafer-level packaging WLP and its applications Abstract: This application note discusses Maxim's wafer-level package (WLP). Topics include: wafer construction, tape-and-reel
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1000x
com/an1891
AN1891,
APP1891,
Appnote1891,
IPC-6012
IPC-D-279
IPC-6013
IPC-6016
IPC-2223
ipc 7094
IPC-7094
IPC-2226
IPC-6011
IPC-7525
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PDF
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Untitled
Abstract: No abstract text available
Text: AN-617 Application Note One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Wafer Level Chip Scale Package by the Wafer Level Package Development Team GENERAL DESCRIPTION PURPOSE
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AN-617
AN03272-0-5/12
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Untitled
Abstract: No abstract text available
Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate
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03-Apr-08
CF001-03
CF001-03
MIL-STD-750
comm-000X
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CF001-03
Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate
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03-Apr-08
CF001-03
CF001-03
MIL-STD-750
CF001-03-000X
CFA0103A
low noise x band hemt transistor
cfb0103
CFB0103-B
CFB0103B
CFS0103-SB
CFA0103-A
Mimix Broadband
CF001
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PDF
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RW34
Abstract: No abstract text available
Text: Engineering Bulletin No RW34 Rotary Wafer Switches - Model MSD General Information Electrical Characteristics. The MSD is essentially a Heavy Duty rotary switch which is rated at 6amps. at 250Vac. Designed to handle higher currents than is possible with normal types of leaf clip wafer switches. It is eminently
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250Vac.
RW34
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PDF
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RW34
Abstract: 028Nm "Rotary Switch 5 ways 2 poles 6 ways Rotary Switch
Text: Engineering Bulletin No RW34 Rotary Wafer Switches - Model MSD General Information Electrical Characteristics. The MSD is essentially a Heavy Duty rotary switch which is rated at 6amps. at 250Vac. Designed to handle higher currents than is possible with normal types of leaf clip wafer switches. It is eminently
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250Vac.
RW34
028Nm
"Rotary Switch 5 ways
2 poles 6 ways Rotary Switch
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2 poles 6 ways Rotary Switch
Abstract: PT6005 PT603 lorlin uk rotary switch 12 positions PT6006 PT6002 PT6003 PT6004 PT6014 PT6461
Text: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:
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500mA
000Vac
500Vdc
CZ108,
2 poles 6 ways Rotary Switch
PT6005
PT603
lorlin uk rotary switch 12 positions
PT6006
PT6002
PT6003
PT6004
PT6014
PT6461
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lorlin uk rotary switch 12 positions
Abstract: PT6005 CZ108 PT6002 PT6003 PT6004 PT6006 PT6034 PT6461 wafer rotary switches
Text: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:
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500mA
000Vac
500Vdc
CZ108,
lorlin uk rotary switch 12 positions
PT6005
CZ108
PT6002
PT6003
PT6004
PT6006
PT6034
PT6461
wafer rotary switches
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PDF
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PT6005
Abstract: CZ108 PT6002 PT6003 PT6004 PT6006 PT6034 PT6461 lorlin uk rotary switch 12 positions
Text: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:
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500mA
000Vac
500Vdc
CZ108,
PT6005
CZ108
PT6002
PT6003
PT6004
PT6006
PT6034
PT6461
lorlin uk rotary switch 12 positions
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PDF
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Untitled
Abstract: No abstract text available
Text: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:
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500mA
000Vac
500Vdc
CZ108,
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PDF
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CFA0301-A
Abstract: CF003-01 CFB0301-B CFB0301
Text: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon
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CF003-01
15-Jul-08
CF003-01
CF003-01-000X
CFA0301-A
CFB0301-B
CFB0301
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pseudomorphic HEMT
Abstract: CF003-03 Hemt transistor
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,
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19-Jul-08
CF003-03
CF003-03
CF003-03-000X
pseudomorphic HEMT
Hemt transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,
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19-Jul-08
CF003-03
CF003-03
for-000X
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PDF
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combination lock circuit
Abstract: CZ108 CKL5100 lock key switch ck
Text: CKL5100 LOCK SWITCHES GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating: Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Housing Material: Wafer Material: Contact/Terminal Material: Lock Housing: Keys: o o o
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CKL5100
150mA
500Vac
500Vdc
CZ108
combination lock circuit
lock
key switch ck
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PDF
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1745-DIMMER
Abstract: No abstract text available
Text: 1745-DIMMER SWITCH MODULE MDSP SWITCH MODULE GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Rating: Life: Operating Temperature: Proof voltage: Insulation Resistance: 1 Pole Changeover: Housing: Wafer: Plunger: Contacts: Rotor Contacts: Terminals RoHS COMPLIANT
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1745-DIMMER
250Vac
999M1
CZ108
EN61058
1745-501S
1745-505S
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PDF
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Untitled
Abstract: No abstract text available
Text: RA ROTARY SWITCH RoHS COMPLIANT GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating: Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal : End Stop Torque (nominal): Wafer: Housing: Contact/Terminal Material:
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150mA
350Ma
000Vac
500Vdc
CZ108
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PDF
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lorlin uk rotary switch 12 positions
Abstract: "Rotary Switch" Bush Lorlin Electronics CZ108
Text: RA ROTARY SWITCH RoHS COMPLIANT GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating: Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal : End Stop Torque (nominal): Wafer: Housing: Contact/Terminal Material:
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150mA
350Ma
000Vac
500Vdc
CZ108
lorlin uk rotary switch 12 positions
"Rotary Switch"
Bush
Lorlin Electronics
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PDF
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photoswitch
Abstract: photoswitch npn
Text: PHOTOSWITCH R Photoelectric Sensors 42KF Teflon Coated Sensor Description General Specifications Light Source The Teflon encased 42KF photoelectric sensor is an ideal solution for liquid level detection applications typically found in the semiconductor wafer
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880nm)
300mm
100mA
photoswitch
photoswitch npn
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PDF
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Zener Diode SOT-23 929b
Abstract: 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona
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OT-23
03A-03
Zener Diode SOT-23 929b
13.8 8w zener diode
zener diode t5
MMSZ4V7T1
MOTOROLA 929B
953b
X2 diode zener
zener diode T3 Marking
diodes zener de 3.5 volts
938B
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PDF
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Y1 SOT-23
Abstract: 338 sot-23 SOT-23 marking 77 y6 sot-23 BZX84C12LT1 SOT-23 marking y1 z7 sot-23 marking 638 sot-23 marking Z2 sot23 Z16 SOT23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona
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OT-23
OT-23
Y1 SOT-23
338 sot-23
SOT-23 marking 77
y6 sot-23
BZX84C12LT1
SOT-23 marking y1
z7 sot-23 marking
638 sot-23
marking Z2 sot23
Z16 SOT23
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Untitled
Abstract: No abstract text available
Text: SB 3100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 3 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
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SB3100
25mil)
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Untitled
Abstract: No abstract text available
Text: SB 5100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 5 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
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SB5100
96mil)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Specification 250V, 64 Channel Push-Pull Driver with Adjustable Source/Sink Current Ordering Information Package Options Device Die in waffle pack Bumped die in waffle Pack Die in wafer form HV3225 HV3225X HV3225BX HV3225WX Features General Description
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OCR Scan
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HV3225
HV3225X
HV3225BX
HV3225WX
HVOUT53/12
HVOUT52/13
HVQUT51/14
HVOUT50/15
T48/17
HVOUT42/23
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