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    GENERAL SEMICONDUCTOR MARKING SJ SMA Search Results

    GENERAL SEMICONDUCTOR MARKING SJ SMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING SJ SMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: MARKING CODE TL DO-214AC general semiconductor MARKING SJ SMA MARKING S1G semiconductor band color code GENERAL SEMICONDUCTOR MARKING sg A4075 SM1000
    Text: S1A thru S1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band Mounting Pad Layout 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


    Original     		PDF DO-214AC 11-Feb-02 GENERAL SEMICONDUCTOR MARKING SJ SMA MARKING CODE TL DO-214AC general semiconductor MARKING SJ SMA MARKING S1G semiconductor band color code GENERAL SEMICONDUCTOR MARKING sg A4075 SM1000

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: SMA MARKING S1G S1G HE3 marking SM DO-214AC MARKING CODE TL DO-214AC VISHAY MARKING SJ SMA s1m marking code MARKING CODE S1M SMA SMA MARKING S1J S1M HE3
    Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 40 A, 30 A IR 1.0 µA, 5.0 µA VF 1.1 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • •


    Original     		PDF DO-214AC J-STD-020C UL-94V-0 J-STD-002B JESD22-B102D 06-Sep-05 GENERAL SEMICONDUCTOR MARKING SJ SMA SMA MARKING S1G S1G HE3 marking SM DO-214AC MARKING CODE TL DO-214AC VISHAY MARKING SJ SMA s1m marking code MARKING CODE S1M SMA SMA MARKING S1J S1M HE3

    88710

    Abstract: s07j Do219AB marking code sg S07G VISHAY MARKING SG DO-219AB S07B S07D S07J S07M
    Text: S07B thru S07M Vishay Semiconductors New Product formerly General Semiconductor Small Surface Mount Rectifier Forward Current 0.7A Reverse Voltage 100 to 1000V DO-219AB SMF Cathode Band Top View 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Detail Z enlarged 0.00 – 0.10


    Original     		PDF DO-219AB 26-Apr-02 88710 s07j Do219AB marking code sg S07G VISHAY MARKING SG DO-219AB S07B S07D S07J S07M

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    Untitled

    Abstract: No abstract text available
    Text: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Low Forward Voltage Drop - General purpose rectification application


    Original     		PDF B5817WS/B5818WS/B5819WS OD-323 OD-323 C/10s 278mg B5817WS B5818WS B5819WS S1404015

    Untitled

    Abstract: No abstract text available
    Text: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA SOD-323 - Case: Bend lead SOD-323 package


    Original     		PDF B5817WS/B5818WS/B5819WS OD-323 OD-323 C/10s B5817WS B5818WS B5819WS S1404015

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SG SMA SMA MARKING S1J marking aj aj rectifier
    Text: S1A thru S1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band Mounting Pad Layout 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


    Original     		PDF DO-214AC 50mVp-p 013mm) 09-Feb-04 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SG SMA SMA MARKING S1J marking aj aj rectifier

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SG SMA s1m marking code SMA MARKING S1G VISHAY MARKING SG VISHAY MARKING SJ SG 27 surge current MARKING S1 SMA MARKING S1d VISHAY S1M
    Text: S1A thru S1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band Mounting Pad Layout 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


    Original     		PDF DO-214AC 50mVp-p 013mm) 11-Feb-02 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SG SMA s1m marking code SMA MARKING S1G VISHAY MARKING SG VISHAY MARKING SJ SG 27 surge current MARKING S1 SMA MARKING S1d VISHAY S1M

    VISHAY MARKING SG SMA

    Abstract: GENERAL SEMICONDUCTOR MARKING SJ SMA S1G HE3 VISHAY S1M S1M e3 AJ-10 JESD22-B102D J-STD-002B SG 27 surge current
    Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 40 A, 30 A IR 1.0 µA, 5.0 µA VF 1.1 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • •


    Original     		PDF DO-214AC UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 VISHAY MARKING SG SMA GENERAL SEMICONDUCTOR MARKING SJ SMA S1G HE3 VISHAY S1M S1M e3 AJ-10 JESD22-B102D SG 27 surge current

    Untitled

    Abstract: No abstract text available
    Text: Series 2 8Amp • 120, 240 Vac - AC OUTPUT • • • • Zero Voltage Switching 2500 Volt Isolation Panel Mount Triac Output C U R R E N T D E R AT I N G C U R V E S Relays combine small size and high ratings in a package designed for easy heat sink or panel mounting. Standard


    Original     		PDF S228C SJ/T11364 SJ/T11364

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600 P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X

    3SK264

    Abstract: EN4901A bx-1489
    Text: 3SK264 Ordering number : EN4901A SANYO Semiconductors DATA SHEET 3SK264 N-Channel Silicon MOSFET VHF Tuner, High-Frequency Amplifier Applications Features • • • • Enhancement type Easy AGC Cut off at VG2S=0V Small noise figure Excels in cross modulation characteristics


    Original     		PDF EN4901A 3SK264 014A-006 3SK264-5-TG-E 3SK264 EN4901A bx-1489

    54f164admqb

    Abstract: No abstract text available
    Text: 54F 74F164A Serial-In Parallel-Out Shift Register General Description Features The ’F164A is a high-speed 8-bit serial-in parallel-out shift register Serial data is entered through a 2-input AND gate synchronous with the LOW-to-HIGH transition of the clock


    Original     		PDF 74F164A F164A 74F164APC 96286071012A 54F164ADM 5962-8607101CA 54f164admqb

    74F169PC

    Abstract: No abstract text available
    Text: 54F 74F169 4-Stage Synchronous Bidirectional Counter General Description Features The ’F169 is a fully synchronous 4-stage up down counter The ’F169 is a modulo-16 binary counter Features a preset capability for programmable operation carry lookahead for


    Original     		PDF 74F169 modulo-16 74F169PC 16-Lead 962-86072012A 54F169 96286072012A 54F169DMQB 5962-8607201EA 74F169PC

    VISHAY MARKING CODE

    Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
    Text: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600ï P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 VISHAY MARKING CODE Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S

    Untitled

    Abstract: No abstract text available
    Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 m Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH47N60N 11PLANARâ

    FCA76N60N

    Abstract: SJ 76 A DIODE
    Text: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next • Ultra Low Gate Charge (Typ. Qg = 218 nC) generation of high voltage super-junction (SJ) technology


    Original     		PDF FCA76N60N FCA76N60N SJ 76 A DIODE

    Untitled

    Abstract: No abstract text available
    Text: FCA16N60N N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCA16N60N FCA16N60N

    SERDES

    Abstract: fch47n60n 511 MOSFET
    Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH47N60N FCH47N60N SERDES 511 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 2 8 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rs : rs = 0.3O Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage


    OCR Scan     		PDF 1SV228 SC-59

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1 SV 217 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 CATV TUNING. U nit in mm • High Capacitance Ratio : C 2 V /C 2 5 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 1.25 • + 0.2 0. -


    OCR Scan     		PDF 1SV217

    NA42

    Abstract: No abstract text available
    Text: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.


    OCR Scan     		PDF 1SV303 C2V/C25V NA42

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1SV302 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 2 CATV TUNING C%sj! C2 5 V = 17.5 • High Capacitance Ratio : • Low Series Resistance : rs = 1.05Q Typ. • Useful for Small Size Tuner. U nit in mm (Typ.)


    OCR Scan     		PDF 1SV302