FCH47N60N Search Results

Contextual Info: SupreMOS TM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 m Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

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Abstract: FCH47N60NF
Contextual Info: SupreMOS FCH47N60NF TM tm N-Channel MOSFET, FRFET 600V, 47A, 65mΩ Features Description • RDS on = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

MOSFET 1 KW

Contextual Info: SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65mΩ Features Description • RDS on = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

Contextual Info: SupreMOS TM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Contextual Info: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 m Features Description • 650 V @TJ = 150 The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction SJ technology employing a deep trench filling process that differentiate it from

Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

SERDES

Abstract: fch47n60n 511 MOSFET
Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

fch47n60nf

Contextual Info: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 mΩ Features Description • 650 V @TJ = 150 The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction SJ technology employing a deep trench filling process that differentiate it from

Contextual Info: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

FCH47N60N

Abstract: Tl141
Contextual Info: SupreMOSTM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description • RDS on = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585