Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GENERAL PURPOSE 2N3055 TRANSISTORS Search Results

    GENERAL PURPOSE 2N3055 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL PURPOSE 2N3055 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3055 motorola

    Abstract: motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501
    Text: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501*


    Original     		PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500/D* MJ2500/D 2n3055 motorola motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501

    2N3055

    Abstract: hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier
    Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base


    Original     		PDF 2N3055 MJ2955 2N3055 JESD97. hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier

    2N3055

    Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
    Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base


    Original     		PDF 2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955

    2n3055 malaysia

    Abstract: Mj2955
    Text: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors Applications • General purpose 1 • Audio amplifier 2 Description TO-3 Figure 1.


    Original     		PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955

    2N3055

    Abstract: NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578
    Text: 2H6576 2H6577 2N6578 I NPN SILICON POWER DARLINGTON General-purpose EpiBase for linear and switching Replacement for 2N3055 Popular Voltage transistors, suitable and Driver Performance Diode Protection Can Be Driven from Operating darl ington applications.


    Original     		PDF 2H6576 2H6577 2N6578 2N3055 2N3055 NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578

    pin configuration transistor 2n3055

    Abstract: pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package 2N3055 MJ2955 TRANSISTOR pin configuration transistor mj2955 hfe 2n3055 pnp transistor 2N3055 general purpose 2n3055 transistors
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage


    Original     		PDF ISO/TS16949 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package MJ2955 TRANSISTOR pin configuration transistor mj2955 hfe 2n3055 pnp transistor 2N3055 general purpose 2n3055 transistors

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original     		PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E

    pin configuration transistor 2n3055

    Abstract: pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 2n3055 IC 2n3055 pin hfe 2n3055 Mj2955 power transistor pnp transistor 2N3055
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original     		PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 IC 2n3055 pin hfe 2n3055 Mj2955 power transistor pnp transistor 2N3055

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E

    MJ3001 equivalent

    Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc


    Original     		PDF MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement

    pin configuration transistor mj2955

    Abstract: pin configuration transistor 2n3055 2N3055 pnp transistor 2N3055 hfe 2n3055 MJ2955 TRANSISTOR NPN Transistor 2N3055 2n3055 pin Mj2955 power transistor general purpose 2n3055 transistors
    Text: Transys Electronics L I M I T E D 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage RBE=100Ω


    Original     		PDF 2N3055 MJ2955 kg/100 pin configuration transistor mj2955 pin configuration transistor 2n3055 pnp transistor 2N3055 hfe 2n3055 MJ2955 TRANSISTOR NPN Transistor 2N3055 2n3055 pin Mj2955 power transistor general purpose 2n3055 transistors

    2n3055 malaysia

    Abstract: DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
    Text: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE sat = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.


    Original     		PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve

    MCC 2N3055

    Abstract: 2N3055 2n3055 pin 2n3055 application note
    Text: MCC 2N3055   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 10 Amp NPN Silicon Power Transistors 80 W Features • • Designed for general-purpose switching and amplifier applications


    Original     		PDF 2N3055 MCC 2N3055 2N3055 2n3055 pin 2n3055 application note

    MCC 2N3055

    Abstract: 2n3055 40VDC
    Text: MCC 2N3055   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • 10 Amp NPN Silicon Power Transistors 80 W Designed for general-purpose switching and amplifier applications With TO-3 package


    Original     		PDF 2N3055 MCC 2N3055 2n3055 40VDC

    rca 2n3055

    Abstract: SN3055 2n3055 2N3055 series voltage regulator 2n3055 voltage regulator RCA-2N3055 2N3055 RCA 2n3055 collector characteristic curve power transistor 2n3055 RCA 2N3055 transistor
    Text: Ïïî 38750.81 G E SOLID STATE DË“| 3 f l 7 S a â l 0 1E OQiTJòd 17352 D 5 | \~ T ~ 3 3 - / 3 General-Purpose Power * 2N3055 File Number 1699 General-Purpose Power Transistor


    OCR Scan     		PDF 3fl750Ã 2N3055 RCA-2N3055 2N3055. 2N3055 SN3055. rca 2n3055 SN3055 2N3055 series voltage regulator 2n3055 voltage regulator 2N3055 RCA 2n3055 collector characteristic curve power transistor 2n3055 RCA 2N3055 transistor

    RCA-2N3055

    Abstract: rca 2n3055 2N3055 2N3055 typical applications 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator RCA 2N3055 transistor 2n3055 RCA data 2N3055 RCA
    Text: ÏÏÏ 3875081 G E SOLID STATE DE •3 Û7 SQ Û1 0Qi7J.bc! 5 01E 17352 D ì~ T -3 3 -/3 General-Purpose Power Transistors_ » 2N3055 File Number 1699 General-Purpose Power Transistor Broadly Applicable Devices for Industrial and Commercial Use Features:


    OCR Scan     		PDF 2N3055 RCA-2N3055 2N3055. for2N3055. rca 2n3055 2N3055 2N3055 typical applications 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator RCA 2N3055 transistor 2n3055 RCA data 2N3055 RCA

    Westinghouse Semiconductor

    Abstract: westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055
    Text: POüJEREX INC TD 54-673 Page 1 i Silicon Power Transistors J E D E C T y p e 2N3055 Westinghouse ö > H > co For Switching Amplifier and Regulator Applications 15 Amperes, 115 Watts IV sQ X m m Application The Westinghouse 2N3055 is an NPN dif­ fused transistor. This general-purpose tran­


    OCR Scan     		PDF 2N3055 2N3055 C/2116/DB; C/2117 Westinghouse Semiconductor westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055

    2n3055

    Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR
    Text: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A


    OCR Scan     		PDF 2N3055 MJ2955 MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR

    MJ2955 TRANSISTOR

    Abstract: pnp transistor 2N3055 2n3055 collector characteristic curve 2N3055 Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve
    Text: SOLID STATE INC. 46 FARRAND STR EE T BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com COMPLEMENTARY SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching applications NPN PNP 2N3055 MJ2955 FEA TU RES: * Power Dissipation - PD = 115W @ Tc = 25°C


    OCR Scan     		PDF 2N3055 MJ2955 2N3055 MJ2955 MJ2955 TRANSISTOR pnp transistor 2N3055 2n3055 collector characteristic curve Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve

    2N3055 power amplifier circuit

    Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 2n3055 circuit 2N3055 power circuit 2N3055 typical applications 2N3055-1 TRANSISTOR 2n3055 TRANSISTOR MJ2955
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2 N3 0 5 5 * Com plem entary Silicon Power Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • ‘ Motorola Preferred Device


    OCR Scan     		PDF 2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 2n3055 circuit 2N3055 power circuit 2N3055 typical applications 2N3055-1 TRANSISTOR 2n3055 TRANSISTOR MJ2955

    2n3055 regulator 10a

    Abstract: 2n3055 voltage regulator Transistors 2N3055 Transistor 358 to3 2N3055 2n3055 collector characteristic curve npn 2n3055 J 2N3055 NPN Transistor 2N3055
    Text: 2N3055 NPN POWER TRANSISTORS 60 VOLTS 15 AMP, 115 WATTS General purpose power transistor designed for power regu­ lator, switching and solenoid drive applications. NPN C OLLECTOR Features: • High gain at high current • Low saturation voltage: VcE sat < 1-1V,


    OCR Scan     		PDF 2N3055 T0-204AA 2n3055 regulator 10a 2n3055 voltage regulator Transistors 2N3055 Transistor 358 to3 2N3055 2n3055 collector characteristic curve npn 2n3055 J 2N3055 NPN Transistor 2N3055

    2n3055

    Abstract: 2N3055M 2n3055 collector characteristic curve MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 curve 2n3055 application note 2n3055 amplifier 2N3055/MJ2955 MJ2955
    Text: M m ospec COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A * VCE sat - 1 . 1 V (Max.) @ lc = 4.0 A, lB = 400 mA


    OCR Scan     		PDF 2N3055 MJ2955 2N3055M 2n3055 collector characteristic curve MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 curve 2n3055 application note 2n3055 amplifier 2N3055/MJ2955 MJ2955

    RCS258

    Abstract: RCA 40373 BD182 rca RCA 40363 RCA 40251 40363 2N3055 rca 40411 40411 rca bd142
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ {s a t ) —V 'C E X - m A h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 MHz min; P j to 150 W max


    OCR Scan     		PDF 2N3055 2N6371 BD142 2N6253 BD181 BD182 2N6254 BD183 BD450 BD451 RCS258 RCA 40373 BD182 rca RCA 40363 RCA 40251 40363 2N3055 rca 40411 40411 rca

    rca 40411

    Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max


    OCR Scan     		PDF 2N3055 2N6371 BD142 2N6253 BD181 BD182 2N6254 BD183 BD450 BD451 rca 40411 RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 rcs258 rca 40363