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    GE200NB60S Search Results

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    GE200NB60S Price and Stock

    STMicroelectronics STGE200NB60S

    Trans IGBT Chip N-CH 600V 200A 4-Pin ISOTOP Tube - Rail/Tube (Alt: STGE200NB60S)
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    Avnet Americas STGE200NB60S Tube 400 14 Weeks 100
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    • 100 $19.54544
    • 1000 $18.38202
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    Mouser Electronics STGE200NB60S 184
    • 1 $30.1
    • 10 $22.41
    • 100 $22.04
    • 1000 $19.3
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    Newark STGE200NB60S Bulk 100
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    • 100 $19.95
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    STGE200NB60S Bulk 1
    • 1 $30.52
    • 10 $22.41
    • 100 $19.69
    • 1000 $19.3
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    STMicroelectronics STGE200NB60S 184 1
    • 1 $29.5
    • 10 $21.96
    • 100 $21.6
    • 1000 $18.91
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    TME STGE200NB60S 1
    • 1 $37.75
    • 10 $27.6
    • 100 $27.6
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    Avnet Silica STGE200NB60S 10 15 Weeks 10
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    Chip One Stop STGE200NB60S Tube 50 0 Weeks, 1 Days 1
    • 1 $28.8
    • 10 $21.5
    • 100 $17.6
    • 1000 $16.9
    • 10000 $16.9
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    EBV Elektronik STGE200NB60S 15 Weeks 10
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    Vyrian STGE200NB60S 141
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    SGS Semiconductor Ltd GE200NB60S

    N-CHANNEL 150A-600V-ISOTOP LOW DROP POWERMESH IGBT Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA GE200NB60S 40
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    GE200NB60S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GE200NB60S STMicroelectronics N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT Original PDF

    GE200NB60S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STGE200NB60S

    Abstract: GE200NB60S JESD97 M1113
    Text: GE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE VCES VCE sat GE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current


    Original     		STGE200NB60S STGE200NB60S GE200NB60S JESD97 M1113 PDF

    SCHEMATIC WITH IGBTS

    Abstract: GE200NB60S JESD97 STGE200NB60S
    Text: GE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE VCES VCE sat GE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current


    Original     		STGE200NB60S STGE200NB60S SCHEMATIC WITH IGBTS GE200NB60S JESD97 PDF

    GE200NB60S

    Abstract: STGE200NB60S Date Code Marking STMicroelectronics diode icl 707
    Text: GE200NB60S N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE GE200NB60S • ■ ■ ■ ■ VCES 600 V VCE sat (typ.) IC TC 1.2 V 1.3 V 150 A 200 A 100°C 25°C HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)


    Original     		STGE200NB60S GE200NB60S STGE200NB60S Date Code Marking STMicroelectronics diode icl 707 PDF