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    GE-46 TRANSISTOR Search Results

    GE-46 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GE-46 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB553Y

    Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15


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    2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553 PDF

    c845

    Abstract: c846 transistor D-12 IRGBC30K C-844
    Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K O-220AB C-848 c845 c846 transistor D-12 IRGBC30K C-844 PDF

    c845

    Abstract: c845 TO 92 D-12 IRGBC30K C844 c847 C-844 DC MOTOR CONTROL IGBT
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K O-220AB C-848 c845 c845 TO 92 D-12 IRGBC30K C844 c847 C-844 DC MOTOR CONTROL IGBT PDF

    c845

    Abstract: C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER
    Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K O-220AB C-848 c845 C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER PDF

    C-865

    Abstract: smd C865 AN-994 D-12 IRGBC30K-S SMD-220 C865 C863
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K-S SMD-220 C-866 C-865 smd C865 AN-994 D-12 IRGBC30K-S SMD-220 C865 C863 PDF

    AN-994

    Abstract: IRGBC30K-S SMD-220 GC smd transistor
    Text: PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K-S AN-994 IRGBC30K-S SMD-220 GC smd transistor PDF

    2n1547

    Abstract: 2N1711 to3 LM390
    Text: 2N1547 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1547 Availability Online Store


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    2N1547 2N1547 STV3208 LM3909N 2N1711 to3 LM390 PDF

    2N158

    Abstract: No abstract text available
    Text: 2N158 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N158 Availability Online Store Diodes


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    2N158 2N158 STV3208 LM3909N PDF

    PXF-10

    Abstract: 24VAC to 24VDC converter PXU-20 input output npn 547 transistor diagram Converter 230v to 24v Transistor z1 Current to voltage Converter 4-20mA to 0-10v 0-30V ac dc converters adjustable 0-30v power supply
    Text: Signal Converters & Isolators Process Signal To Frequency Converter PXF-10 DESCRIPTION WIRING DIAGRAM Signal converter for the conversion of an analogue process signal to a pulsating 50% duty cycle transistor output. A typical application would be to convert an analogue signal from a probe to a pulsating


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    PXF-10 8/10kHz 40/50Hz 0V/-10- 10VDC/0 EN61010. IEC414 EN50081-1. EN50082-2. IEC68-2-3; PXF-10 24VAC to 24VDC converter PXU-20 input output npn 547 transistor diagram Converter 230v to 24v Transistor z1 Current to voltage Converter 4-20mA to 0-10v 0-30V ac dc converters adjustable 0-30v power supply PDF

    IRGBC30KD2-S

    Abstract: GC smd diode AN-994 SMD-220
    Text: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes


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    IRGBC30KD2-S applica480V SMD-220 IRGBC30KD2-S GC smd diode AN-994 SMD-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGW15N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,


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    SGW15N60RUF SGW15N60RUF SGW15N60RUFTM O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1132 International d û Rectifier IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 1 Ops @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K-S C-865 SMD-220 C-866 0020fc PDF

    transistor c905

    Abstract: igbt c905 IRGBC30KD2 C909 D-12 qe r 908
    Text: International i«rJRectifier P D - 9.1107 IRGBC3ÖKD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c VcES = 6 0 0 V • Short circuit rated -1 Ops @125°C, V GE = 15V • Swiiching-loss rating includes ail "tail" tosses


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    IRGBC30KD2 C-911 TQ-220AB C-912 transistor c905 igbt c905 C909 D-12 qe r 908 PDF

    transistor c925

    Abstract: DIODE C921
    Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses


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    IRGBC30KD2-S -10ns D020717 SMD-220 C-928 transistor c925 DIODE C921 PDF

    850 U01

    Abstract: transistor 66a
    Text: International g ü Rectifier IRGPH20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT P D - 9.1138 Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve


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    IRGPH20S 400Hz) O-247AC 4A5545E 850 U01 transistor 66a PDF

    SOLID STATE INC

    Abstract: MJ15022 15024 J15022 J15024
    Text: B SO LID STATE INC. 46 FARRAND STREET Product Specification BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com MJ15022 MJ15024 Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15023; MJ15025 • Excellent safe operating area


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    MJ15023; MJ15025 MJ15022 MJ15024 SOLID STATE INC 15024 J15022 J15024 PDF

    GT123

    Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


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    NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 GT123 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    317A-01

    Abstract: 2G0909
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line fj 4 .5 G H z @ 1 0 m A HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR d e s ig n e d p r i m a r i l y f o r u s e in M A T V / C A T V a m p li f i e r s a n d o t h e r NPN SILICO N b r o a d b a n d lin e a r a p p lic a t io n s d e m a n d in g h ig h p o w e r g a in w i t h lo w


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    transistor TF78

    Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 transistor TF78 AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202 PDF

    MHT5002

    Abstract: MHT5001 MHT5006 2sc113 D11C211B20 DC5501 DC6112B MD20 BSY47
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    NPN110. BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A MHT5002 MHT5001 MHT5006 2sc113 D11C211B20 DC5501 DC6112B MD20 BSY47 PDF

    AD166

    Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT


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    transistor c905

    Abstract: No abstract text available
    Text: P D - 9.1107 International Rectifier IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V c es = 6 0 0 V Short circuit rated -1 Ops @125°C, VGe = 15V Switching-loss rating includes all "tail" losses


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    IRGBC30KD2 C-911 S5452 TQ-220AB C-912 transistor c905 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


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    IRGBC20UD2 application16 TQ-220AB PDF