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    GDDG Price and Stock

    Everlight Electronics Co Ltd HLMP1523-QT264-3GD(DGK)

    LED
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    DigiKey HLMP1523-QT264-3GD(DGK) Bulk 750
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    e10cel SYS CX10S-DGGDDG-P-A-DK00000

    ACDC CNVT 2X24V 2X48V 3X24V 960W
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    e10cel SYS CX10S-GDDGCD-P-A-DK00000

    AC/DC CNVT 48V 3X24V 2X48V 1000W
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    e10cel SYS CX10S-GDDGDG-P-A-DK00000

    AC/DC CNVT 2X24V 48V 24V 48V 24V
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    e10cel SYS CX10S-GDDGGD-P-A-DK00000

    ACDC CNVT 48V 3X24V 48V 24V 960W
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    GDDG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    reh3

    Abstract: 9555TAC 7B-26
    Text: 64>*, ?6=33|<60>3 >;872 >?0?3 =380C 4IEUVSIT ^ N`glg akgdYlagf ^ JED klYlmk af\a[Ylgj ^ Da]d][lja[ klj]f_l` 9555T ^ X]jg [jgkk gj jYf\ge lmjf2gf ^ Bmadl2af kfmZZ]j ^ P]egnYZd] ^af_]j hjgg^ [gn]j YnYadYZd] ^ NYf]d egmfl ^ Efnajgfe]flYd ^ja]f\dq hjg\m[l .PgHQ [gehdaYfl/


    Original     		PDF 9555T 87TDC 9555TAC 6555K 55TDC/ 287TDC reh3 9555TAC 7B-26

    DR-B 2003

    Abstract: sw 2604 ic ic sw 2604 YC 2604 sw 2604 SI 1125H DIODE S4 76A TA1360AFG DR26A sw68
    Text: TA1360AFG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA1360AFG YCbCr/YPbPr Signal and Sync Processor for Digital TV, Progressive Scan TV and Double Scan TV The TA1360AFG integrates an analog component signal YCbCr/YPbPr processor and sync processor in a 80-pin QFP


    Original     		PDF TA1360AFG TA1360AFG 80-pin 525I/60, 625I/50, 525P/60, 625P/50, 1125I/50, 1125I/60, DR-B 2003 sw 2604 ic ic sw 2604 YC 2604 sw 2604 SI 1125H DIODE S4 76A DR26A sw68

    S5VB10

    Abstract: s5vb40 SHINDENGEN DIODE
    Text: SHINDENGEN ELECTRIC MFG 54E D • fl2 n 3 6 7 ■ GDDGSIS bST « S H E J O U T L IN E D IM E N S IO N S S5VBD 600V 6A ■ R A T IN G S A b s o lu te Maximum R a tin g s m s Item i£ # S J f Storage Temperature SteSM B« Operating Junction Temperature Maximum Reverse Voltage


    OCR Scan     		PDF S5VB10 S5VB20 S5VB40 S5VB60 Tc--25 SHINDENGEN DIODE

    Untitled

    Abstract: No abstract text available
    Text: ACCUTEK MICROCIRCUIT BTE D DlD7t,47 GDDGDl? 7 ACU T -4 6 -2 3 -1 8 ACCUTEK AK581024W 1,048,576 x 8 bit CMOS Dynamic Random Access Memory MICROCIRCUIT DESCRIPTION The Accutek AK581024W high density memory module is a random access memory organized in 1 Meg x 8 bit words.


    OCR Scan     		PDF AK581024W AK581024W AK581024

    SCR 2000V 1000A

    Abstract: GE-SPCO C702 cycloconverters Thyristor ys 150 C702CA C701PN oms 450 thyristor YS Thyristor SCR C701L
    Text: N l û E CO/ STATIC PUR CMPNT 3ME » 3074504 GDDG1G3 1 • ù E S P High Power 53m m Silicon Controlled Rsctifier GE-SPCO S ta tic Pntoer C nm nonent O peration fifnlnem .P A USA 1000 A Avg. Up To 3200 Volts "7\W\*| PG 6.052 9/1/88 [ C7 Q2 A M P L IF Y IN G G A T E


    OCR Scan     		PDF RS-397 SCR 2000V 1000A GE-SPCO C702 cycloconverters Thyristor ys 150 C702CA C701PN oms 450 thyristor YS Thyristor SCR C701L

    Untitled

    Abstract: No abstract text available
    Text: MAX-L ION CORP 32E D • 5fl75TLi5 GDDGD52 L> ■ SURFACE MOUNT DEVICES OPERATING AND STORAGE TEMPERATURE - 6 5 ° C to +175°G TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV VPK lo @ TC* Aa v 6C Maximum Forward


    OCR Scan     		PDF FGS101 FGS102 FGS103 FGS104 FGS105 FGS106 FGS107 FJS101 FJS102 FJS103

    GDDG

    Abstract: GDDG37G 1413L
    Text: IINTL MICROCIRCUITS INC E5E » 4050410 GDDG37G 1 MPY-12 IMli 72 X /2 PARALLEL MULTIPLIER * I n t e r n a t io n a l M ic r o c ir c u it s I nc PRODUCT D E S C R IP TIO N S PRODUCT F E A T U R E S ^ Fast parallel 12 x 12 bit multiplication T he M PY-12IM I family of circuits are high-speed, 12 by


    OCR Scan     		PDF GDDG37G MPY-12 MIL-STD-883 PY-12IM GDDG 1413L

    2N4039

    Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
    Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES


    OCR Scan     		PDF DQD0144 2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4221

    2N4303

    Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
    Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES


    OCR Scan     		PDF DQD0144 2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N4303 2n3866 noise 2N5566 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161

    Untitled

    Abstract: No abstract text available
    Text: S7E ]> BMSIBSS GDDGÛ12 PAG • F G R S B40C20ÜÜ/15ÜÜ FAGOR BüUUUüUUO/1500 FAGOR ELECTRONICS Dimensions in mm. Plastic Voltage 100 to 1.000 V. Case 1 .1 ±0.05 Current 2.0 A. i= P = a • In process of evaluation UL 1449 • Low Cost • Case: Epoxy encapsulation


    OCR Scan     		PDF B40C20Ã UUO/1500 DO-201AD DO-27A DO-201AE DO-201

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E Û1331Ô7 GDDG1SÔ SEMELAB K BUP49 /> o d NPN MULTI-EPITAXIAL TRANSISTOR M E C H A N IC A L D A T A Designed for high energy applications requiring robust fast switching devices D im ensions in mm FEATURES • LOW V CE|I11, 1-6 • FA ST SW ITCHING


    OCR Scan     		PDF BUP49

    uA 726 HC

    Abstract: IC00030
    Text: 323 011 4 ELECTRONIC DESIGNS INC_ 71C 0 0026 7 ELE CTR ON IC DESIGNS INC 71 D e | 323D114 GDDGQBt. 7 | Electronic Designs Inc. EDH5832-30/35/45 32K x 8 EEPROM T he EDH5832 is an e le ctrica lly erasable, p ro gra m m a ble rea d-o nly m e m o ry EEPRO M w ith ea se -o f-u se features. EEPRO M can be m od ifie d using sim p le T T L level


    OCR Scan     		PDF EDH5832-30/35/45 EDH5832 TELEX-858325 uA 726 HC IC00030

    B250 FAGOR C2000 1500

    Abstract: fagor b40 C2000 fagor B250 C2000 b380 c2000 B40C2000/1500 b40c200 fagor b380 c2000 B80C2000 fagor b380 c2000/1500 fagor b80 c2000
    Text: BMSIBSS GDDGÛ12 PAG • F G R S S7E ]> B40C20ÜÜ/15ÜÜ FAGOR BüUUUüUUO/1500 FAGOR ELECTRONICS Dimensions in mm. .1 ±0.05 Plastic Case Voltage 100 to 1.000 V. Current 2.0 A. i= P = a • In process of evaluation UL 1449 \ + «y ~ co co co • Low Cost


    OCR Scan     		PDF B40C2000/1500. B5OOUZO00/1500 T-Z-S-05 C2000/15000 C2000/13000 C20CKI/1SOOO C2-17 DO-201AD DO-27A B250 FAGOR C2000 1500 fagor b40 C2000 fagor B250 C2000 b380 c2000 B40C2000/1500 b40c200 fagor b380 c2000 B80C2000 fagor b380 c2000/1500 fagor b80 c2000

    Cyrix FasMath

    Abstract: CX-83S87 cyrix 386SX fcom 7c DATA SHEET FOR OL 107 E SOLDER PEST FasMath 83D87 386SX CIRCUIT diagram 80386 83S87
    Text: 83S87 User’s Manual High Performance CMOS Math Processor CYRIX CORP 3bE » H SSñ^ñn □ GQDlB'ì fi • T—49—1 2-05 FasMath CX-83S87 User's Manual January, 1990 o * P.O. Box 850118 Richardson, TX 76085-0118 CYR CYRIX CORP 3bE D ■ 2 5 ö t filici □ □ D D I M Q


    OCR Scan     		PDF QQD13tà CX-83S87 X-/V9-12-05 16-bit 16-blt 16-bltlnt -64-bit 64-blt 89ABCDE Cyrix FasMath cyrix 386SX fcom 7c DATA SHEET FOR OL 107 E SOLDER PEST FasMath 83D87 386SX CIRCUIT diagram 80386 83S87

    VCC3 1156 01

    Abstract: VCC3 1156
    Text: » I T T I O L O » _ S S S S S S GSM31P512KB-I66 256KB/512KB Modules s— Features Functional Description cont’d • • • • The GSM31P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single 5V 8Kx8 SRAM for the tag. The GSM14P512K-I66, a


    OCR Scan     		PDF GSM31P512KB-I66 256KB/512KB GSM31P256KB-I66, 256KB GS81132Q 32KX32 GSM14P512K-I66, 512KB GS82032Q 64KX32 VCC3 1156 01 VCC3 1156

    Untitled

    Abstract: No abstract text available
    Text: PDM41096S PDM41096L Paradigm 4 Megabit Static RAM 512Kx 8-Bit Features Description □ High speed access times Com'l: 15,17, 20, 25, 35 and 45 ns Ind: 17, 20, 25, 35, and 45 ns The PDM41096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. This product is


    OCR Scan     		PDF PDM41096S PDM41096L 512Kx PDM41096 PPM41096S, PDM41096 36-pin

    alpha wire catalog

    Abstract: RW-69W RW67V
    Text: •rlnm SEMI-PRECISION POWER WIREWOUND LAS/AS Alloy resistance w ire wound to specific parameters including TCR’s from +20 to +5500 ppm /'C SERIES* Alpha - Digital Marking Silicone conformai coating AI! welded cap — i and lead assembly 1/2 watt to 10 watts


    OCR Scan     		PDF MIL-R-26 S7242 alpha wire catalog RW-69W RW67V

    I-CUBE

    Abstract: P103t zener diode phc 16 ZENER diode p317 AB P89 zener PLK3210 hk30 transistor 4287 AB zener phc 12 kck 223
    Text: SH5 I-Cube* IQX Family Data Sheet Description Features The IQX family of SRAM-based bit-oriented switching devices is manufactured using a 0.6vim CMOS process. These devices offer clock speed of up to 150 MHz and fastest pin-to-pin delay of 6 ns. • SRAM-based, in-system programmable


    OCR Scan     		PDF D-11-014W I-CUBE P103t zener diode phc 16 ZENER diode p317 AB P89 zener PLK3210 hk30 transistor 4287 AB zener phc 12 kck 223

    KL21

    Abstract: T12N
    Text: EUPEC SEE T> 3 4 0 3 2* 1 7 GQGGbm S3Ö H U P E C T12N T 'Z J 5 -IS TVpenrelhe/iype range T 12 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom


    OCR Scan     		PDF GGGGb41 -7-Z5-15 KL21 T12N

    Untitled

    Abstract: No abstract text available
    Text: Standard Product February, 1994 LXT304A Low -Pow er T1/E1 Integrated Short H aul Transceiver with Receive Jitter Attenuation Features The LXT304A is a fully integrated low-power transceiver for both North American 1.544 MHz Tl , and European 2.048 MHz (E l) applications. It features a constant low


    OCR Scan     		PDF LXT304A LXT304A LXP600A LXP2180A 5MbT23b 00D03S

    SO-DIMM 144-pin

    Abstract: No abstract text available
    Text: IBM11T1640L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns


    OCR Scan     		PDF IBM11T1640L 110ns 130ns Vss/18Vcc 128ms 00D0751 IBM11T1640L 50H8015 SA14-4462-00 SO-DIMM 144-pin

    Untitled

    Abstract: No abstract text available
    Text: ^ 3 “ ^ I / I J • ^ A dvanced L in e a r D evices, Inc. ALD4706A/ALD4706B ALD4706 QUAD ULTRA MICROPOWER RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES T h e A LD 4706 is a quad monolithic C M O S ultra micropower high slew-rate operational amplifier intended for a broad range of analog applications


    OCR Scan     		PDF ALD4706A/ALD4706B ALD4706 yv50mV/div AL04706

    ilpi 031

    Abstract: NB10EP143 NB10EP143J IOR 450 M ILPI
    Text: NTT Electronics NB10EP143 9-bit Hold Register PIN NAME FUNCTIONS Pin Function Dü - D8 SEL CLK1, CLK2 MR QO - Q8 NC Data Inputs Mode Select Input Clock Inputs Master Reset Data Outputs No Connection -h o 4 D2 SEL Mode L H Load Hold o W u m a £ > isd fed


    OCR Scan     		PDF NB10EP143 NB10EP143 NB10EP143J ilpi 031 NB10EP143J IOR 450 M ILPI

    equivalent D 13007

    Abstract: equivalent 13007 valox* 457 LD 13007
    Text: General Specifications MATERIALS Insulator: Blue glass filled thermopalstic polyester Valox UL 94V-0 Approved; Green glass filled ployphenylene sulfide Ryton UL 94V-0 Approved; Natural brown polyetheretherketone Peek UL 94V-0 Approved; Other materials available.


    OCR Scan     		PDF E64287 Voltag09 EZM36DCSH) 7ETL47 equivalent D 13007 equivalent 13007 valox* 457 LD 13007