Untitled
Abstract: No abstract text available
Text: STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032Î2 - 36A - T0-220/T0-220FP STripFET POWER MOSFET TYP E V dss RDS on Id STP36NE06 STP36NE06FP 60 V 60 V < 0 .0 4 0 Q. < 0 .0 4 0 Q. 36 A 20 A . TYPICAL Ros(on) =0.032 £2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED
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STP36NE06
STP36NE06FP
T0-220/T0-220FP
CUR47
O-22QFP
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TP36N
Abstract: DIODE RK 306
Text: STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032Î2 - 36A - T0-220/T0-220FP STripFET POWER MOSFET TYPE V STP36N E06 STP36NE06FP dss 60 V 60 V R D S o n Id < 0.040 Q. < 0.040 Q, 36 A 20 A . TYPICAL RDs(on) = 0.032 C2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED
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T0-220/T0-220FP
STP36N
STP36NE06FP
STP36NE06
TP36N
DIODE RK 306
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GC73830
Abstract: No abstract text available
Text: STGD7NB60H N-CHANNEL 7 A - 600V - DPAK PowerMESH IGBT TYPE STG D 7NB60H . . . . . . . VcES VcE sat lc 600 V < 2.8 V 7 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcssa1) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION
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STGD7NB60H
7NB60H
O-252)
O-252
120kHz)
GC73830
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