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    Abstract: No abstract text available
    Text: 1 7c1gcia37 0045Û14 Sbfl •SGTH _ *57 S C S -T H O M S O N IL C K g ra *! S T E 4 5 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE S TE45N 50 V dss 500 V RDS on Id < 0.11 n 45 A ■ HIGH CURRENT POWER MODULE


    OCR Scan     		PDF TE45N IRFP450 E81743) STE45N50

    Ultrasonic welding circuit diagram

    Abstract: GC54800
    Text: SGS-THOMSON STE45N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V dss RDS on Id STE45N50 500 V < 0 .1 1 Ì2 45 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER


    OCR Scan     		PDF STE45N50 IRFP450 E81743) Ultrasonic welding circuit diagram GC54800