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    STK9N10

    Abstract: GC233
    Text: r z 7 S C S -T H O M S O N Ä 7# S T K 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK9N10 . . • . . . V dss RoS on Id 100 V 0 .3 Í1 9 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE


    OCR Scan     		PDF STK9N10 OT-82 OT-194 GC2334Û GC20270 STK9N10 GC233