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ifm efector inc IGC205 SENSOR PROX INDUCTIVE 12MM CYL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IGC205	Box			1	1 $118.5 10 $118.5 100 $118.5 1000 $118.5 10000 $118.5	Buy Now
TME	IGC205				1	1 $54.14 10 $54.14 100 $54.14 1000 $54.14 10000 $54.14	Get Quote
Neutron USA	IGC205		6			1 $248.54 10 $248.54 100 $248.54 1000 $248.54 10000 $248.54	Buy Now
Littelfuse Inc PGC-2056 200:5 CT 2.2" ID 55MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PGC-2056	Bulk			1	1 $107.56 10 $107.56 100 $107.56 1000 $107.56 10000 $107.56	Buy Now
t-Global Technology TG-C205L-330X330X0.05 RF EMI DBL SIDED TAPE 13"X13"
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TG-C205L-330X330X0.05	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
ifm efector inc IGC205 (ALTERNATE: IGB3012-BPKG/M/US-104-DPS) Inductive sensor, 18mm diameter, 12mm nonflush range, 3wire DC PNP, N.O, QD \| ifm efector IGC205
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IGC205 (ALTERNATE: IGB3012-BPKG/M/US-104-DPS)	Bulk	6		1	1 $123.24 10 $112.15 100 $108.45 1000 $108.45 10000 $108.45	Buy Now
PEER Bearing Company GC205-TC (ALTERNATE: PER.GC205-TC) PEER Agriculture (AG) \| PEER Bearing (SKF) GC205-TC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	GC205-TC (ALTERNATE: PER.GC205-TC)	Bulk		1 Weeks	1	1 $24.28 10 $23.06 100 $21.85 1000 $21.85 10000 $21.85	Get Quote

GC205 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CT-1004 Abstract: D4808 Text: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω	Original	STB30NM50N STI30NM50N STF30NM50N STP30NM50N, STW30NM50N O-220FP, O-220, O-247 CT-1004 D4808	PDF
STW30NM50N Abstract: 30NM50N STP30NM50N STB30NM50N STF30NM50N STI30NM50N Text: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω	Original	STB30NM50N STI30NM50N STF30NM50N STP30NM50N, STW30NM50N O-220FP, O-220, O-247 STB30NM50N STI30NM50N STW30NM50N 30NM50N STP30NM50N STF30NM50N	PDF
GC2035 Abstract: Cutler-Hammer HFD J250H GC2015 BS 4752 E125H j250e cutler hammer ghb CUTLER HAMMER E125S Cutler-Hammer* E125B Text: Cutler-Hammer Molded Case Circuit Breakers 15-100 Amperes January 2001 12-11 Vol. 1, Ref. No. [0477] G-Frame Types GC, GHC and HGHC Circuit Breakers Product Selection Table 12-14. Type GC Thermal-Magnetic Circuit Breakers with Non-interchangeable Trip Units	Original	125/250V GC1015® GC1020 GC1025 GC1030 GC1035 GC1040 GC1045 GC1050 GC2035 Cutler-Hammer HFD J250H GC2015 BS 4752 E125H j250e cutler hammer ghb CUTLER HAMMER E125S Cutler-Hammer* E125B	PDF
DTM180AA Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB Text: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS	Original	200mW 100mW DTM180AA DT-408 STD8018A LP05018 LS1012 DTM180AB	PDF
Untitled Abstract: No abstract text available Text: STW 9 NA60 S T H 9 N A 6 0 FI S G S -T H O M S O N [M O ig œ ilL ie ra *® N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STW 9N A60 STH 9N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 0 .8 Q. < 0 .8 Q. 9.5 A 6.4 A TYPICAL RüS(on) = 0.69 Cl	OCR Scan	A60FI	PDF
Untitled Abstract: No abstract text available Text: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	STB6NA60 O-262) O-263) O-262 O-263	PDF
STP4NB80 Abstract: No abstract text available Text: STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 iî - 4A - TO -220/T0220FP PowerMESH MOSFET TYPE V S TP4N B80 STP 4N B80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 n 4 A 4 A TYPICAL RDS(on) = 3 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED	OCR Scan	STP4NB80 STP4NB80FP -220/T0220FP B80FP STP4NB80/FP O-22QFP STP4NB80	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ STP80NE06-10 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE S T P 8 0 N E 0 6 -1 0 V dss 60 V R d Id S (o i i ) <0.01 Q. 80 A . • TYPICAL RDS(on) = 0.0085 EXCEPTIONAL dv/dt CAPABILITY	OCR Scan	STP80NE06-10	PDF
STP60 Abstract: stp60n06 Text: SGS-THOMSON £j ï ¡mora « STP60N05-16 STP60N06- 16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 dss 50 V 60 V . RDS on Id < 0 .0 1 6 Q. < 0 .0 1 6 Q. 60 A 60 A Q . . TYPICAL RDs(on) = 0.013 AVALANCHE RUGGED TECHNOLOGY	OCR Scan	STP60N05-16 STP60N06- STP60 stp60n06	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STP3NA100 STP3N A1OOFI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE S T P 3 N A 1 00 S T P 3 N A 1 00FI • . . . . . . V dss R d S(oii) Id 1 0 00 V 1 0 00 V <5 Q. < 5 0. 3 .5 A 2 A TYPICAL R D S (on) =4.3 Î2	OCR Scan	STP3NA100 STP3NA10 ISOWATT22Q	PDF
Headland Technology Product Group Abstract: headland headland technology 80386 microprocessor pin out diagram GC205 M240-M241 CC182 logical block diagram of 80286 headland 386 SPA21 Text: II GCK181 Universal PS/2 Chip Set Headland Technology Inc FEATURES d e s c r ip t io n • Universal Micro Channel Com patible chip set supporting the Intel 80286,386SX and 80386 to 25 MHz • Designed in 0.9 Micron channel length HCMOS and BiCMOS in Surface Mount Packages	OCR Scan	GCK181 386SX 20MHz 20MHz Headland Technology Product Group headland headland technology 80386 microprocessor pin out diagram GC205 M240-M241 CC182 logical block diagram of 80286 headland 386 SPA21	PDF
ym 238 Abstract: No abstract text available Text: STP50NE10 N - CHANNEL 100V - 0.021Q - 50A - D2PAK STripFET POWER MOSFET TYPE S TP 50N E10 V dss RDS on Id 1 00 V <0.027 Q 50 A TYPICAL Ftos(on) = 0.021 Q m EXCEPTIONALdv/dt CAPABILITY . . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100 °C . APPLICATION ORIENTED	OCR Scan	STP50NE10 ym 238	PDF
Untitled Abstract: No abstract text available Text: STP45N10 STP45N1OFI N - CHANNEL 100V - 0.027Î2 - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE V STP45N10 S T P 45 N 1 OFI . . . . . . . . dss 100 V 100 V R D S o n Id < 0 .0 3 5 Q. < 0 .0 3 5 CÌ 45 A 24 A TYPICAL RDs(on) = 0.027 £2 AVALANCHE RUGGED TECHNOLOGY	OCR Scan	STP45N10 STP45N1OFI O-220/TO-220FI STP45N 10/FI ISQWATT220	PDF
VNV35N07 Abstract: No abstract text available Text: VNP35N07FI VNB35N07/VNV35N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 Q. 0.028 a 0.028 n 35 A 35 A 35 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION	OCR Scan	VNP35N07FI VNB35N07/VNV35N07 VNB35N07 VNV35N07 VNP35N07FI, VNB35N07 NB35N07-VNV35N07 PowerSO-10 VNV35N07	PDF

Untitled Abstract: No abstract text available Text: SGS-THOMSON :LiM iO gS STP3NA1oo STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE S T P 3N A 1 00 S T P 3N A 1 00 F I . rn . . . . . V dss RDS(on Id 1 000 V 1 000 V <5 Q < 5 Q 3.5 A 2 A TYPICAL RDS(on) = 4.3 Q ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	STP3NA100FI STP3NA100	PDF
Untitled Abstract: No abstract text available Text: rz 7 SGS-THOMSON m 7# S T B 1 8N20 RaDeiBOILiCTI^OTDeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss RDS on Id STB18N20 200 V < 0.18 n 18 A Q • TYPICAL RDS(on) =0.145 AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED	OCR Scan	STB18N20 O-262) O-263) O-262 O-263 7T2T237	PDF
7AS1 Abstract: No abstract text available Text: STGP7NB60HD STGP7NB60HDFP N-CHANNEL 7A - 600V - TO-220/FP PowerMESH IGBT TYPE STG P7N B60H D STG P7N B60H D FP . V CES VcE sat lc 6 00 V 6 00 V < 2 .8 V < 2 .8 V 7 A 7 A H IG H IN PU T IM PEDA N C E (VO LTA G E DR IVEN) . LOW ON-VOLTAGE DROP (Vcesat) .	OCR Scan	STGP7NB60HD STGP7NB60HDFP O-220/FP 7AS1	PDF
.2TY Abstract: gc224 1N239 Text: t r i SGS-THOMSON IRF840/FI IRF841/FI ¡L[iOT 2 iQ(gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R d S(o ii ) Id IR F 8 4 0 IR F 8 4 0 F I 500 V 500 V 0 .8 5 a 0 .8 5 Q 8 A 4 .5 A IR F841 IR F 8 4 1 F I 450 V 450 V 0 .8 5 a 0 .8 5 L i 8 A 4 .5 A	OCR Scan	IRF840/FI IRF841/FI O-220 ISOWATT220 GC22430 .2TY gc224 1N239	PDF
4NB80 Abstract: STP4NB80 c60930 Text: STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Î2 - 4A - T O -220/T0220F P PowerMESH MOSFET TYPE V STP4NB 80 STP4NB80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 Q, 4 A 4 A TYPICAL RDS(on) = 3 £2 EXTREMELY HIGHdv/dt CAPABILITY 100% AVALANCHE TESTED	OCR Scan	STP4NB80 STP4NB80FP -220/T0220F 4NB80 c60930	PDF
STB80NE06-10 Abstract: No abstract text available Text: SGS-THOMSON RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ STB80NE06-10 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE S T B 8 0 N E 0 6 -1 0 V dss 60 V R d Id S (o i i ) <0.01 Q. 80 A . • TYPICAL RDS(on) = 0.0085 EXCEPTIONAL dv/dt CAPABILITY	OCR Scan	STB80NE06-10 O-263 STB80NE06-10	PDF
STP5N90 Abstract: STP5N90FI CC-20-5 Text: SGS-THOMSON BteiOHLKeiTKsJiOei w /-v-n o . r- • TYPE V dss STP5N90 STP5N90FI . • . . . . , 900 V 900 V R STP5N90 STP5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR d S O II < 2.4 Q < 2.4 Q Id 5A 2.8 A TYPICAL RDS(on) = 1.9 Q AVALANCHE RUGGED TECHNOLOGY	OCR Scan	STP5N90 STP5N90FI STP5N90 STP5N90FI gc34750 1000VOS STP5N90/FI CC-20-5	PDF
S935 Abstract: No abstract text available Text: STP45N10 STP45N10FI N - CHANNEL 100V - 0.027a - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYP E STP45N10 S T P 45N 1 0FI Voss RDS on Id 100 V 100 V < 0 .0 3 5 Î2 < 0 .0 3 5 Q 45 A 24 A . TYPICAL Rds(oh) = 0.027 Cl m AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED	OCR Scan	STP45N10 STP45N10FI O-220/TO-220FI TP45N S935	PDF
erso Abstract: VNV35N07 Text: VNP35N07FI VNB35N07/VNV35N07 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp R D S o n lli m VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.0 28 Î2 0 .0 28 Q 0.0 28 Q 35 A 35 A 35 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION	OCR Scan	VNP35N07FI VNB35N07/VNV35N07 VNB35N07 VNV35N07 VNP35N07FI, erso	PDF

GC205 Search Results

GC205 Price and Stock

ifm efector inc IGC205

Littelfuse Inc PGC-2056

t-Global Technology TG-C205L-330X330X0.05

ifm efector inc IGC205 (ALTERNATE: IGB3012-BPKG/M/US-104-DPS)

PEER Bearing Company GC205-TC (ALTERNATE: PER.GC205-TC)

GC205 Datasheets Context Search

CT-1004

STW30NM50N

GC2035

DTM180AA

Untitled

Untitled

STP4NB80

Untitled

STP60

Untitled

Headland Technology Product Group

ym 238

Untitled

VNV35N07

Untitled

Untitled

7AS1

.2TY

4NB80

STB80NE06-10

STP5N90

S935

erso