GBU25M Search Results

GBU 25M

Abstract: gbu25m GBU25K
Contextual Info: GBU25A-GBU25M Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 25.0 A GBU Features 22.3± 0.3 Ideal for printed circuit board 3.7± 0.35 94V-O - AC P. TY 2.2± 0.2 .9 R1 Plas tic m aterrial has U/L flam m ability clas s ification 1.9± 0.3 plas tic technique

Contextual Info: GBU25A – GBU25M 25A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction A       Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability

gbu25m

Abstract: GBU 25M GBU25A
Contextual Info: BL GALAXY ELECTRICAL GBU25A - GBU25M VOLTAGE RANGE: 50 - 1000 V CURRENT: 25.0 A SILICON BRIDGE RECT IFIERS FEATURES GBU Ideal for printed circuit board .933 23.7 .894(22.7) Reliable low cos t cons truction utilizing m olded .140(3.56) .130(3.30) .185(4.7)

Contextual Info: GBU25B Thru GBU25M High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 25A FEATURES z Plastic Package has Underwriters Laboratory z High current capacity with small package z Glass passivated chip junctions

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package GBU Package Weight mg 4000 Product Group Type No. GBU4A – GBU4M GBU6A – GBU6M GBU8A – GBU8M GBU10A – GBU10M GBU12A – GBU12M GBU15A – GBU15M GBU25A – GBU25M

Contextual Info: PRODUCT SELECTION GUIDE Bridge Rectifiers 1 http://www.wontop.com WON-TOP ELECTRONICS 2 Contents Introduction 4 Selector Guides 5 Bridge Rectifiers 6 SMD 6 Dual In-Line 7 Single In-Line 8 Round Type 14 Square Type 15 Three Phase 22 3 Introduction Constructed with both glass passivated die and silicon open junction die, Won-Top Electronics manufactures a

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V