GB200TS60NPBF Search Results
GB200TS60NPBF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability |
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GB200TS60NPbF E78996 2002/95/EC 11-Mar-11 | |
Contextual Info: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half Bridge” Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 s short circuit capability |
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VS-GB200TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability |
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GB200TS60NPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
1853GContextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability |
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GB200TS60NPbF 18-Jul-08 1853G | |
Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching operating frequencies 8 to 60 kHz COMPLIANT • Low VCE(on) |
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GB200TS60NPbF 12-Mar-07 | |
w438Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability |
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GB200TS60NPbF 18-Jul-08 w438 | |
Contextual Info: GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability |
Original |
GB200TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability |
Original |
VS-GB200TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
GB200TS60NPBFContextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAKTM "Half-Bridge" Ultrafast Speed IGBT , 200 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Low VCE(on) COMPLIANT • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient |
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GB200TS60NPbF 12-Mar-07 GB200TS60NPBF | |
GB200TS60Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability |
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GB200TS60NPbF E78996 2002/95/EC 11-Mar-11 GB200TS60 | |
GB200TS60N
Abstract: GB200TS60NPBF DC-209 E78996 datasheet bridge
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GB200TS60NPbF E78996 2002/95/EC 18-Jul-08 GB200TS60N GB200TS60NPBF DC-209 E78996 datasheet bridge | |
Contextual Info: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability |
Original |
VS-GB200TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Vishay Intertechnology, Inc. Industrial Fabrication One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial Fabrication Welding 4 Cutting 5 Melting 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay |
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VMN-MS6761-1212 | |
diode KVP 83 AContextual Info: Vishay Intertechnology, Inc. Industrial Fabrication One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial 製造装置 溶接 4 切断 5 融解 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay |
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VMN-MS6792-1304-INFB diode KVP 83 A |