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    GB200 Search Results

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    GB200 Price and Stock

    Vishay Beyschlag CMB02070X7509GB200

    RES SMD 75 OHM 2% 1W 0207
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    DigiKey CMB02070X7509GB200 Cut Tape 9,076 1
    • 1 $0.83
    • 10 $0.539
    • 100 $0.3681
    • 1000 $0.26797
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    CMB02070X7509GB200 Digi-Reel 9,076 1
    • 1 $0.83
    • 10 $0.539
    • 100 $0.3681
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    CMB02070X7509GB200 Reel 8,000 2,000
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    • 10000 $0.20967
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    Vishay Beyschlag CMB02070X4709GB200

    RES SMD 47 OHM 2% 1W 0207
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    DigiKey CMB02070X4709GB200 Cut Tape 7,055 1
    • 1 $0.83
    • 10 $0.539
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    CMB02070X4709GB200 Reel 6,000 2,000
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    Vishay Beyschlag CMB02070X1201GB200

    RES SMD 1.2K OHM 2% 1W 0207
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    DigiKey CMB02070X1201GB200 Cut Tape 5,750 1
    • 1 $0.83
    • 10 $0.539
    • 100 $0.3681
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    CMB02070X1201GB200 Digi-Reel 5,750 1
    • 1 $0.83
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    CMB02070X1201GB200 Reel 4,000 2,000
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    Vishay Beyschlag CMB02070X1004GB200

    RES SMD 1M OHM 2% 1W 0207
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMB02070X1004GB200 Cut Tape 2,591 1
    • 1 $0.83
    • 10 $0.539
    • 100 $0.3681
    • 1000 $0.26797
    • 10000 $0.26797
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    CMB02070X1004GB200 Digi-Reel 2,591 1
    • 1 $0.83
    • 10 $0.539
    • 100 $0.3681
    • 1000 $0.26797
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    CMB02070X1004GB200 Reel 2,000 2,000
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    Vishay Beyschlag CMB02070X1203GB200

    CMB 0207 2% B2 120K
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    DigiKey CMB02070X1203GB200 Cut Tape 2,052 1
    • 1 $1.01
    • 10 $0.582
    • 100 $0.3519
    • 1000 $0.22624
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    CMB02070X1203GB200 Digi-Reel 2,052 1
    • 1 $1.01
    • 10 $0.582
    • 100 $0.3519
    • 1000 $0.22624
    • 10000 $0.22624
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    CMB02070X1203GB200 Reel 2,000 2,000
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    Find more GB200 price and stock on Findchips.com

    GB200 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GB200 Microsemi SCR Nanosecond Switching, Planar Scan PDF
    GB200 Microsemi SCRs Nanosecond Switching Planar Scan PDF
    GB200 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    GB200 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    GB200 Unitrode International Semiconductor Data Book 1981 Scan PDF
    GB2000025 Diodes Incorporated CRYSTAL 20.0000MHZ 15PF Original PDF
    GB2000033 Diodes Incorporated CRYSTAL 20.0000MHZ 18PF Original PDF
    GB2000039 Diodes Incorporated CRYSTAL 20.0000MHZ 20PF Original PDF
    GB200A Microsemi SCR Nanosecond Switching, Planar Scan PDF
    GB200A Microsemi SCRs Nanosecond Switching Planar Scan PDF
    GB200A Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    GB200A Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    GB200A Unitrode International Semiconductor Data Book 1981 Scan PDF

    GB200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GA201

    Abstract: GA201A GA200 GA200A GB200 GB200A GB201 GB201A GR201A
    Text: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level


    OCR Scan     		GA200 GB200 GA200A GB200A GA201 GB201 GA201A GB201A GA/GB200 GB200 GB200A GB201 GB201A GR201A PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses


    Original     		VS-GB200TH120U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C


    Original     		VS-GB200TH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    fast diode for welder application

    Abstract: No abstract text available
    Text: VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses


    Original     		VS-GB200TH120U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 fast diode for welder application PDF

    Untitled

    Abstract: No abstract text available
    Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB200TS60NPbF E78996 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half Bridge” Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 s short circuit capability


    Original     		VS-GB200TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C


    Original     		VS-GB200TH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB200TS60NPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    1853G

    Abstract: No abstract text available
    Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability


    Original     		GB200TS60NPbF 18-Jul-08 1853G PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB200LH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB200NH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Sfor1b42

    Abstract: 2SF102B CW12B 2N50S1 E0102FB FBase-F Package SFOR3B
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 45 50 55 2N88S 2N4333 2N5724 GA10l GA200 GA200A GB200 GB200A AAl00 AA107 2N3031 AA114 2N3028 MCR203 E0100FD E0102FA E0102FB E0102FD 10101 MMBS50S1 BRX45 BRX45 C203YY SlYY BRY55-S0 BRY55SS0


    Original     		2N88S 2N4333 2N5724 GA10l GA200 GA200A GB200 GB200A AAl00 AA107 Sfor1b42 2SF102B CW12B 2N50S1 E0102FB FBase-F Package SFOR3B PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB200LH120N 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB200NH120N 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    w438

    Abstract: No abstract text available
    Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability


    Original     		GB200TS60NPbF 18-Jul-08 w438 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB200LH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C


    Original     		VS-GB200TH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB200TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		VS-GB200TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB200NH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    GB200TS60NPBF

    Abstract: No abstract text available
    Text: GB200TS60NPbF Vishay High Power Products INT-A-PAKTM "Half-Bridge" Ultrafast Speed IGBT , 200 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Low VCE(on) COMPLIANT • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient


    Original     		GB200TS60NPbF 12-Mar-07 GB200TS60NPBF PDF

    GB200TS60

    Abstract: No abstract text available
    Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB200TS60NPbF E78996 2002/95/EC 11-Mar-11 GB200TS60 PDF

    GB200TS60N

    Abstract: GB200TS60NPBF DC-209 E78996 datasheet bridge
    Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB200TS60NPbF E78996 2002/95/EC 18-Jul-08 GB200TS60N GB200TS60NPBF DC-209 E78996 datasheet bridge PDF

    GA201

    Abstract: GB201 lcle 10 100S GA200 GA200A GA201A GB200 GB200A GB201A
    Text: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB200A GB201 GB201A FEATU RES D ESCR IPTIO N • • • • • The Unitrode Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current sw itching capability inherent in SCRs. With


    OCR Scan     		GA200 GB200 GA200A GB200A GA201 GB201 GA201A GB201A GA/GB200 GB201 lcle 10 100S GB200 GB200A GB201A PDF