Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GATE VOLTAGE CONTROL CIRCUIT OF A POWER AMPLIFIER Search Results

    GATE VOLTAGE CONTROL CIRCUIT OF A POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GRT155C81A475ME13D Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155C81A475ME13J Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155D70J475ME13D Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155D70J475ME13J Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd

    GATE VOLTAGE CONTROL CIRCUIT OF A POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GN01037B

    Abstract: No abstract text available
    Text: GaAs MMICs GN01037B GaAs IC with built-in ferroelectric For the preamplifier of the transmitting section in a cellular phone Other communication equipment unit: mm +0.2 +0.25 1 8 V Gate control voltage VAGC 0 to 2 V Circuit current IDD 80 mA Max input power


    Original     		GN01037B SC-74 GN01037B PDF

    BAP1289

    Abstract: 3 phase bridge scr drive circuit diagram
    Text: APPLIED POWER SYSTEMS, INC. BAP1289 HV SCR Gate Driver Board System BAP1289 HIGH VOLTAGE ISOLATED SCR GATE DRIVER The BAP1289 provides a complete, reliable, turnkey solution to control single or multiple High Voltage SCR devices. High current FET amplifiers drive individual


    Original     		BAP1289 3 phase bridge scr drive circuit diagram PDF

    SCR TRIGGER PULSE TRANSFORMER

    Abstract: specifications of scr SCR TRIGGER PULSE circuit 3 phase scr drive circuit diagram 1 phase SCR TRIGGER PULSE TRANSFORMER SCR GATE DRIVER SCR TRIGGER PULSE 3 phase gate drive pulse transformer SCR PULSE transformer circuit scr drive circuit diagram
    Text: APPLIED POWER SYSTEMS, INC. BAP1289 HV SCR Gate Driver Board System BAP1289 HIGH VOLTAGE ISOLATED SCR GATE DRIVER The BAP1289 provides a complete, reliable, turnkey solution to control single or multiple High Voltage SCR devices. High current FET amplifiers drive individual


    Original     		BAP1289 120VAC HFBR-4532 HFBR-2524 HFBR-1524 SCR TRIGGER PULSE TRANSFORMER specifications of scr SCR TRIGGER PULSE circuit 3 phase scr drive circuit diagram 1 phase SCR TRIGGER PULSE TRANSFORMER SCR GATE DRIVER SCR TRIGGER PULSE 3 phase gate drive pulse transformer SCR PULSE transformer circuit scr drive circuit diagram PDF

    HIP4081 pwm

    Abstract: HIP4081A HIP4081 pwm controller AN9405 HIP4080A equivalent
    Text: Harris Semiconductor No. AN9405.3 Harris Intelligent Power September 1997 HIP4081A, 80V High Frequency H-Bridge Driver Author: George E. Danz Introduction ideal for use in various high frequency converter applications, such as motor drives, class-D audio amplifiers, and


    Original     		AN9405 HIP4081A, HIP4081A HIP408X 10VDC 80VDC HIP4081 pwm HIP4081 pwm controller HIP4080A equivalent PDF

    HIP4081 amplifier circuit diagram class D

    Abstract: HIP4081A AN9405 irf520 mosfet power mosfet ic 12 volts for audio amplifier application note gate driver with bootstrap capacitor CD4069 50 amp H-bridge Mosfet stepper motor hip4081 IRF520R
    Text: Harris Semiconductor No. AN9405.2 Harris Intelligent Power September 1996 HIP4081A, 80V High Frequency H-Bridge Driver Author: George E. Danz Introduction motor drives, class-D audio amplifiers, and high-performance DC-DC converters. A typical application is shown in


    Original     		AN9405 HIP4081A, HIP4081A HIP408X HIP408X 10VDC 80VDC HIP4080A/81A HIP4081 amplifier circuit diagram class D irf520 mosfet power mosfet ic 12 volts for audio amplifier application note gate driver with bootstrap capacitor CD4069 50 amp H-bridge Mosfet stepper motor hip4081 IRF520R PDF

    IH33

    Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
    Text: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the


    OCR Scan     		PDF

    RA06H8285M

    Abstract: RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM MOSFET Amplifier Module RA06H8285M-01 RA06H8285M-E01 MOSFET AMPLIFIER Handling Precautions for MOSFET rf mosfet power amplifier Rf power transistor mosfet
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range.


    Original     		RA06H8285M 820-851MHz RA06H8285MB 851-MHz RA06H8285M RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM MOSFET Amplifier Module RA06H8285M-01 RA06H8285M-E01 MOSFET AMPLIFIER Handling Precautions for MOSFET rf mosfet power amplifier Rf power transistor mosfet PDF

    LM1212

    Abstract: LM121 C1996 LM1212N V17L
    Text: LM1212 230 MHz Video Amplifier System with OSD Blanking Y General Description Y The LM1212 is a very high frequency video amplifier system intended for use in high resolution monochrome or RGB color monitor applications with OSD In addition to the wideband video amplifier the LM1212 contains a gated differential input black level clamp comparator for brightness control a DC controlled attenuator for contrast control and a


    Original     		LM1212 LM1212 LM121 C1996 LM1212N V17L PDF

    LM1202

    Abstract: LM2202 LM2202M LM2202N national semiconductor 1976 monochrome monitor schematic crt monitor circuit diagram
    Text: LM2202 230 MHz Video Amplifier System General Description The LM2202 is a very high frequency video amplifier system intended for use in high resolution monochrome or RGB color monitor applications. In addition to the wideband video amplifier the LM2202 contains a gated differential input black


    Original     		LM2202 LM2202 LM1202 LM2202M LM2202N national semiconductor 1976 monochrome monitor schematic crt monitor circuit diagram PDF

    ROHM capacitor

    Abstract: 7660 harris SOIC-16 TQ9142B 2N3906 MAX850 ROHM capacitor MCH155F103ZK ROHM resistor
    Text: WIRELESS COMMUNICATIONS DIVISION TQ9142B RF OUT 1 16 RF OUT GND 2 15 GND VG3 3 14 V D2 GND 4 13 GND GND 5 12 GND RF IN 6 11 V G2 GND 7 10 GND 8 9 VD1 V G1 DATA SHEET High-Efficiency 3-Stage AMPS Power Amplifier IC Features TQ9142B §60% drain efficiency §+31.0 dBm power output @4.8V


    Original     		TQ9142B TQ9142B ROHM capacitor 7660 harris SOIC-16 2N3906 MAX850 ROHM capacitor MCH155F103ZK ROHM resistor PDF

    7660 harris

    Abstract: transistor 2n 3906 -338 2N3906 MAX850 SOIC-16 TQ9142 TQ9142B rf power amplifier 850 MHZ Dual PNP Transistor diode 824
    Text: T R I Q U I N T S E M I C O N D U C T O R , I N C . WIRELESS COMMUNICATIONS TQ9142B VD2 TQ9142 VD3 ZO = 50Ω RF OUT RF IN VG1 VG2 VG3 High-Efficiency 3-Stage AMPS Power Amplifier IC GND The TQ9142B is a highly efficient 3-stage power amplifier developed for handsets and


    Original     		TQ9142B TQ9142 TQ9142B 7660 harris transistor 2n 3906 -338 2N3906 MAX850 SOIC-16 TQ9142 rf power amplifier 850 MHZ Dual PNP Transistor diode 824 PDF

    ILC7660S

    Abstract: ilc7660 MCH182F104ZK 2N3906 TQ9147B C5352 48volt power supply applications
    Text: WIRELESS COMMUNICATIONS DIVISION TQ9147B RFOUT 1 16 RFOUT GND 2 15 GND GND 3 14 GND GND 4 13 GND GND 5 12 GND RFIN 6 11 VG2 GND 7 10 GND §High Efficiency VG1 8 9 VD1 §+32 dBm Output Power DATA SHEET 2-Stage AMPS Power Amplifier IC Features §50Ω Matched Input


    Original     		TQ9147B SO-16 TQ9147 IS-19) ILC7660S ilc7660 MCH182F104ZK 2N3906 TQ9147B C5352 48volt power supply applications PDF

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the


    Original     		RA30H4452M RA30H4452M 30-watt 520-MHz PDF

    7660 harris

    Abstract: 840 rectifier 820 860 2N3906 SOIC-16 TQ9147B
    Text: T R I Q U I N T S E M I C O N D U C T O R , I N C . WIRELESS COMMUNICATIONS TQ9147B VD1 TQ9147B VD2 ZO = 50Ω RF OUT ICs RF IN 2-Stage AMPS Power Amplifier IC VG1 VG2 Features The TQ9147B is a highly efficient power amplifier developed for portable terminals


    Original     		TQ9147B SO-16 TQ9147B po075 7660 harris 840 rectifier 820 860 2N3906 SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: WIRELESS COMMUNICATIONS DIVISION TQ9142B RF OUT RFOUT 1 16 GND 2 15 GND VG3 3 14 VD2 GND 4 13 GND GND 5 12 GND RFIN 6 11 VG2 GND 7 10 GND VG1 8 9 VD1 DATA SHEET High-Efficiency 3-Stage AMPS Power Amplifier IC Features TQ9142B 60% drain efficiency +31.0 dBm power output @4.8V


    Original     		TQ9142B S0-16 50-ohm TQ9142B PDF

    RA07M1317MS

    Abstract: 135175MHz ra07m1317msa
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original     		RA07M1317MSA 135-175MHz RA07M1317MSA 175-MHz RA07M1317MS 135175MHz PDF

    LM1202

    Abstract: No abstract text available
    Text: December 1995 Semiconductor & LM1202 230 MHz Video Amplifier System General Description The LM1202 is a very high frequency video amplifier system intended for use in high resolution monochrome or RGB color monitor applications. In addition to the wideband video


    OCR Scan     		LM1202 PDF

    RA07M4047MS

    Abstract: RF MODULE 435Mhz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4047MSA RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 400- to


    Original     		RA07M4047MSA 400-470MHz RA07M4047MSA 470-MHz RA07M4047MS RF MODULE 435Mhz PDF

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the


    Original     		RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz PDF

    schematic diagram of transistor amplifier 5v to 6

    Abstract: LM1202 br21 a150 attenuator C1996 LM1202M LM1202N monochrome monitor schematic IC36
    Text: LM1202 230 MHz Video Amplifier System Y General Description Y The LM1202 is a very high frequency video amplifier system intended for use in high resolution monochrome or RGB color monitor applications In addition to the wideband video amplifier the LM1202 contains a gated differential input


    Original     		LM1202 schematic diagram of transistor amplifier 5v to 6 br21 a150 attenuator C1996 LM1202M LM1202N monochrome monitor schematic IC36 PDF

    RA07H4047M

    Abstract: RA07H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4047M RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 400- to 470-MHz


    Original     		RA07H4047M 400-470MHz RA07H4047M 470-MHz RA07H4047M-101 PDF

    HMC415

    Abstract: microwave mosfet
    Text: MICROWAVE CORPORATION v00.0103 A SIMPLE CMOS POWER CONTROL CIRCUIT FOR THE HMC408LP3 AMPLIFIER General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.


    Original     		HMC408LP3 HMC407MS8G HMC413QS16G HMC414MS8G HMC415LP3 HMC415 microwave mosfet PDF

    RA07M3340M

    Abstract: RA07M3340M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to


    Original     		RA07M3340M 330-400MHz RA07M3340M 400-MHz RA07M3340M-101 PDF

    gsm vco

    Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
    Text: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the


    Original     		EHT09097 EHT09123 EHT09124 gsm vco bfr93aw schematic gsm 900 amplifier k 3531 transistor PDF