FGC1500A-130DS
Abstract: No abstract text available
Text: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS FGC1500A-130DS HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING GATE Dimensions in mm CATHODE 117 ± 1 54.5 CATHODE GATE CATHODE GATE GATE 6-φ 5± (18 ) (54.5) (3) 0.2 15 ± φ63 ± 0.2 φ91MAX φ3.5 ± 0.2
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FGC1500A-130DS
91MAX
FGC1500A-130DS
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symmetrical gate commutated thyristor
Abstract: CS thyristor gct thyristor thyristor 800A thyristor cdi FGC1500B-130DS 0.2uF
Text: MITSUBISHI GCT Gate Commutated Turn-off THYRISTOR FGC1500B-130DS HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING GATE Dimensions in mm CATHODE GATE CATHODE .2 GATE 5 6-φ ) (18 (3) .2 ±0 15 φ63 ± 0.2 φ91MAX φ3.5 ± 0.2 2.2 ± 0.2 DEPTH (6.4)
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FGC1500B-130DS
91MAX
symmetrical gate commutated thyristor
CS thyristor
gct thyristor
thyristor 800A
thyristor cdi
FGC1500B-130DS
0.2uF
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Pluto programming cable, serial
Abstract: AX103 02HEX 0x6201 0x00000303 canopen object dictionary siemens AX102 AX-18B Modbus Organization AX104
Text: PLUTO Gateway User Manual PROFIBUS DeviceNet CANopen Ethernet GATE-P1 GATE-D1 GATE-C1 GATE-E1 1 Pluto_Gateway_Manual_v5A.doc www.jokabsafety.com Revision history: Version 1A Date 2006-04-20 Change First release 2A 2006-10-12 New functions on K-button. Update PROFIBUS req/resp data, diagnostic data. .
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Untitled
Abstract: No abstract text available
Text: 2N4003K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE Features: * Gate Pretection Diode DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching.
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2N4003K
OT-23
08-Sep-09
OT-23
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CI C393C
Abstract: GE c394 ci C393 C393 200mAde C393C GE SCR 1000 C388 C392 C392A
Text: INVERTER SCR's 500 TO 700 A M P E R E S GE TYPE C 387 C 388 C 397 C 398 C 392 C393 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500-1200 500-1200 500-1200 500-1200
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SF1154
CI C393C
GE c394
ci C393
C393
200mAde
C393C
GE SCR 1000
C388
C392
C392A
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400V to 48V converter
Abstract: 2 input and gate 24v DC converter 24v input 100v output 300V dc to dc boost converter MI-200 power not gate 100v boost MI-J00 VI-J00 48V to 300V dc dc converter
Text: 2 DC-DC Converter Pinouts Pinout Description VI-200, VI-J00 Modules –IN –IN –OUT GATE OUT –S –OUT GATE OUT –S GATE IN +S T T GATE IN +S +IN +OUT +IN +OUT –IN, +IN: DC voltage inputs. See tables below for nominal input voltages and ranges for the VI-200,
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VI-200,
VI-J00
VI-J00,
MI-200
MI-J00
VI-J00
150/300V
MI-200,
400V to 48V converter
2 input and gate 24v
DC converter 24v input 100v output
300V dc to dc boost converter
power not gate
100v boost
48V to 300V dc dc converter
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VLA501-01
Abstract: VLA503-01 LNR1 igbt modules application note VLA503 VLA106-15242 15242 igbt desaturation driver schematic VLA502 VLA502-01
Text: First Release: September 23, 2009 Application NOTES: BG2D – Solderless Connection Gate Drive Prototype Board Description: The BG2D is a two channel gate drive circuit board. The dual NX series modules’ gate and emitter pins can be plugged directly into this board. The BG2D utilizes Powerex hybrid gate drivers and DC to DC
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VLA500-01
VLA502-01
VLA501-01
VLA503-01
LNR1
igbt modules application note
VLA503
VLA106-15242
15242
igbt desaturation driver schematic
VLA502
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IGBT DRIVER SCHEMATIC
Abstract: IGBT DRIVER SCHEMATIC chip M57962AL m57962l IGBT Driver Power Schematic IGBT DRIVE 50V 300A 600v 20a IGBT driver zener diode 18V 1.5W Mitsubishi Electric IGBT MODULES IGBT 400 amp
Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES 6.0 Using Hybrid Gate Drivers common mode noise immunity. This feature allows convenient common referencing of high and low side control signals. Mitsubishi
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MJD44H11
D44VH10
MJD45H11
D45VH10
O-220
MJE15030
MJE243
MJE15031
MJE253
IGBT DRIVER SCHEMATIC
IGBT DRIVER SCHEMATIC chip
M57962AL
m57962l
IGBT Driver Power Schematic
IGBT DRIVE 50V 300A
600v 20a IGBT driver
zener diode 18V 1.5W
Mitsubishi Electric IGBT MODULES
IGBT 400 amp
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Untitled
Abstract: No abstract text available
Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●Key Specifications Isolation voltage: Maximum gate drive voltage: I/O delay time: Minimum input pulse width:
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2500Vrms
BM6103FV-C
BM6103FV-C
2500Vrms,
350ns,
180ns,
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BM6101FV
Abstract: No abstract text available
Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6101FV-C ●Key Specifications Isolation voltage: Maximum gate drive voltage: I/O delay time: Minimum input pulse width:
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2500Vrms
BM6101FV-C
BM6101FV-C
2500Vrms,
350ns,
180ns,
SSOP-B20W
BM6101FV
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Untitled
Abstract: No abstract text available
Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●Key Specifications Isolation voltage: Maximum gate drive voltage: I/O delay time: Minimum input pulse width:
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2500Vrms
BM6103FV-C
BM6103FV-C
2500Vrms,
350ns,
180ns,
SSOP-B20W
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Untitled
Abstract: No abstract text available
Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●Key Specifications Isolation voltage: Maximum gate drive voltage: I/O delay time: Minimum input pulse width:
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2500Vrms
BM6103FV-C
BM6103FV-C
2500Vrms,
350ns,
180ns,
SSOP-B20W
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Untitled
Abstract: No abstract text available
Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6101FV-C ●Key Specifications Isolation voltage: Maximum gate drive voltage: I/O delay time: Minimum input pulse width:
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2500Vrms
BM6101FV-C
BM6101FV-C
2500Vrms,
350ns,
180ns,
SSOP-B20W
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BM6103
Abstract: No abstract text available
Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input
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2500Vrms
BM6103FV-C
BM6103FV-C
2500Vrms,
350ns,
180ns,
BM6103
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BM6103
Abstract: RSR025N3
Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input
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2500Vrms
BM6103FV-C
BM6103FV-C
2500Vrms,
350ns,
180ns,
BM6103
RSR025N3
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M57962L
Abstract: m57959l "MITSUBISHI HYBRID" CM600HA-24H CM600HA-24 "IGBT Drivers" 57962l CM600HA24H
Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES 5.0 Using Hybrid Gate Drivers Mitsubishi offers four single in-line hybrid ICs for driving IGBT modules. All four drivers are high speed devices designed to convert
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00V/ms
MJD44H11
D44VH10
MJE15030
MJE243
2SC4151
MJD45H11
D45VH10
MJE15031
MJE253
M57962L
m57959l
"MITSUBISHI HYBRID"
CM600HA-24H
CM600HA-24
"IGBT Drivers"
57962l
CM600HA24H
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Untitled
Abstract: No abstract text available
Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input
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2500Vrms
BM6103FV-C
BM6103FV-C
2500Vrms,
350ns,
180ns,
SSOP-B20W
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GTO thyristor
Abstract: 40A GTO thyristor GTO thyristor driver thyristor inverter circuit diagram THYRISTOR GTO GTO thyristor Application notes gto Gate Drive circuit vvvf speed control of 3 phase induction motor GTO gate drive unit Snubber circuits theory, design and application
Text: MITSUBISHI HIGH POWER SEMICONDUCTORS MITSUBISHI HIGH POWER SEMICONDUCTORS FEATURE AND APPLICATIONAND OF GATE TURN-OFF THYRISTORS FEATURE APPLICATION OF GATE TURN-OFF THYRISTORS Gate turn-off GTO thyristors are able to not only turn on the main current but also turn it off, provided with a gate drive circuit. Unlike conventional thyristors, they have no commutation circuit, downsizing application systems while improving
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IGBT gate drive board
Abstract: No abstract text available
Text: APPLIED POWER SYSTEMS, INC. BAP1491 IGBT Gate Drive Board BAP1491 IGBT Gate Drive Board for Three Phase and Full Bridge Inverters Complete IGBT Gate Drive Board with the following feature: Current sensing and heatsink temperature sensing capability
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BAP1491
AP-1491
IGBT gate drive board
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single phase igbt based inverter 200 amps circuit
Abstract: IGBT gate drive board single phase igbt based inverter 200 amps circuit board single phase IGBT based PWM inverters IGBT Gate Drive ap-1491 inverter igbt circuit diagrams in bridge LM35 application circuits 5045-04A BAP1491
Text: APPLIED POWER SYSTEMS, INC. BAP1491 IGBT Gate Drive Board BAP1491 IGBT Gate Drive Board for Three Phase and Full Bridge Inverters Complete IGBT Gate Drive Board with the following feature: Current sensing and heatsink temperature sensing capability
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BAP1491
AP-1491
single phase igbt based inverter 200 amps circuit
IGBT gate drive board
single phase igbt based inverter 200 amps circuit board
single phase IGBT based PWM inverters
IGBT Gate Drive
inverter igbt circuit diagrams in bridge
LM35 application circuits
5045-04A
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MOSFET
Abstract: No abstract text available
Text: ACE3400B N-Channel Enhancement Mode MOSFET Description The ACE3400BBM+ uses advanced trench technology to provide excellent RDS ON and low gate charge low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load
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ACE3400B
ACE3400BBM+
MOSFET
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ICC24
Abstract: No abstract text available
Text: BM6103FV-C Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input
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BM6103FV-C
2500Vrms
BM6103FV-C
2500Vrms,
350ns,
180ns,
ICC24
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Vishay nobel AST 3
Abstract: weight transmitter e 1 wei Vishay nobel vishay nobel gate 3s Vishay nobel AST 3B weight transmitter ast 3b ast 3 nobel Vishay nobel tad E-2-WEI
Text: Gate 3S Vishay Nobel Transducers Gateway FEATURES ∑ Gate 3S significantly reduces overall system costs compared against equipping each weigh system with separate fieldbus interfaces ∑ Up to 16 units can be connected to GATE 3S ∑ Can be connected to most existing fieldbuses
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08-Apr-05
Vishay nobel AST 3
weight transmitter e 1 wei
Vishay nobel
vishay nobel gate 3s
Vishay nobel AST 3B
weight transmitter
ast 3b
ast 3 nobel
Vishay nobel tad
E-2-WEI
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Untitled
Abstract: No abstract text available
Text: RT8298E 6A, 24V, 600kHz Step-Down Converter with Synchronous Gate Driver General Description Features The RT8298E is a synchronous step-down DC/DC converter with an integrated high side internal power MOSFET and a gate driver for a low side external power MOSFET. It
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RT8298E
600kHz
RT8298E
300kHz
DS8298E-01
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