0.2UF Search Results

LM4780

Contextual Info: LM4780, LM4780TABD www.ti.com SNAS193B – JULY 2003 – REVISED APRIL 2013 LM4780 Overture Audio Power Amplifier Series Stereo 60W, Mono 120W Audio Power Amplifier with Mute Check for Samples: LM4780, LM4780TABD FEATURES DESCRIPTION • • • • •

Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Contextual Info: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

SMCTTA32N14A10

Abstract: TA32N14A10
Contextual Info: SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid.

EMP8

Abstract: NJM2729
Contextual Info: NJM2729 1 回路 高精度オペアンプ 高精度オペアンプ • 特長 ■ 外形 VIO=60 V max. VIO=100μV max. Ta= -40℃~+85℃ ⊿VIO/⊿T=0.9µV/℃ max. (Ta= -40℃~+85℃) ●高精度 ●低温度ドリフト ●±5V 電源スペック ●高同相信号除去比

EPC1213

Contextual Info: Configuration EPROMs / g ' T ï ï r f s W for FLEX Devices y Data Sheet J a n u a r y 1 9 9 8 , v e r. 8 Features * • ■ ■ ■ ■ ■ Serial EPROM family for configuring FLEX devices Simple, easy-to-use 4-pin interface to FLEX devices Low current during configuration and near-zero standby current

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

7N65A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65A Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand

586A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65Z Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

POWER MOSFET Rise Time

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3710 Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or

DIODE 349

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

BD 4215

Abstract: SOT23-6 5mm uv led datasheet adc 0808 MARK A5 SOT23-6 marking B6 sot23 MARKING CF sot23-6 marking code DN SOT23 SOT23-6 MARKING b4 LTC4215CUFD-1
Contextual Info: LTC4215-1 Hot Swap Controller with I2C Compatible Monitoring FEATURES DESCRIPTION n The LTC 4215-1 Hot Swap controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor, board supply voltage

SN65DSI96

Contextual Info: SN65DSI86 SN65DSI96 www.ti.com SLLSEH2 – SEPTEMBER 2013 MIPI DSI BRIDGE to eDP Check for Samples: SN65DSI86 , SN65DSI96 FEATURES APPLICATIONS • Embedded DisplayPort eDP 1.4 Compliant Supporting 1, 2, or 4 Lanes at 1.62Gbps (RBR), 2.7Gbps (HBR), or 5.4Gbps (HBR2).

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET 1   FEATURES TO-220F TO-220 DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Ceramic Capacitors 0.2UF 50V

Abstract: 0.2uf 50V Ceramic Capacitor Ceramic capacitor 0,2uF 50V CH141 20KV CH10 CH11 PACDN007
Contextual Info: PACDN007 18 Channel ESD Protection Array Features Product Description • • • +20 kV of ESD protection per channel HBM +15 kV contact ESD protection per channel • • (IEC 61000-4-2 standard) Low loading capacitance—7pF typical 24-pin QSOP package

RUTTONSHA SCR

Abstract: RUTTONSHA 81 ria 120 600 amp RUTTONSHA diode datasheet RUTTONSHA SILICON RECTIFIER 25 ria 120 25 RIA 120 SCR RUTTONSHA SCR 25 RIA 120 SCR 40 RIA 120 RUTTONSHA SILICON RECTIFIER 81 ria 120 600 amp RUTTONSHA all diodes datasheet RUTTONSHA all diodes datasheet
Contextual Info: Ruttonsha International Rectifier Ltd. SILICON CONTROLLED RECTIFIERS RUTTONSHA 71RIA, 81RIA SERIES Power Silicon Controlled Rectifiers 110, 125 Amp RMS SCRs Types : 71RIA10-71RIA140, 81RIA10-81RIA140 71RIA, 81RIA FEATURES v All diffused series. v High di/dt and dv/dt capabilities.

transformer 15v 500mA

Abstract: 500-D24
Contextual Info: TWR Series 30W, Triple Output DC/DC Converters This family of triple output DC/DC converters was developed for xDSL line card applications. Two independently regulated converters in a 2" x 2" x 0.5" plastic package offer 3.3V @ 4.25A and ± 12V @ ±625mA or ± 15V @ ±500mA.

XXHX

Abstract: LHi 987 lprom c 32 SASM64K FJUL64168-03 ML64168 ML64P168 QFP80-P-1420-0 3P40p42 na11 pnp
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

3n70

Abstract: pwm mosfet 3a 700v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

capacitor 0.2uf 50v

Contextual Info: PACVGA200 VGA Port Companion Circuit Features Product Description • • The PACVGA200 incorporates seven channels of ESD protection for all signal lines commonly found in a VGA port. ESD protection is implemented with current steering diodes designed to safely handle the high

irg7r313u

Abstract: irg7r313 IRG7R313UPbF irg7r31 12A1000 EIA-541 IRFR120 JESD22-A114 igbt data
Contextual Info: PD - 97484 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability

Contextual Info: / ^ L i n t A B _ LT1330 5 7 RS232 Transceiver with 3V Logic Interface and O ne Receiver A ctive in SHUTDOWN TECHNOLOGY June, 1992 KATURCS DESCRIPTION • 3V Logic Interface The LT1330 is a three driver, five receiver RS232 trans­ ceiver with low supply current. Designed to interface with

0.6uH inductor delta

Abstract: IR3629 IR3629A JESD22-A114
Contextual Info: Data Sheet No. PD94726 IR3629/IR3629A MPbF HIGH FREQUENCY SYNCHRONOUS PWM BUCK CONTROLLER WITH POWER GOOD OUTPUT Features Description • • • • The • • • • • • Internal 600kHz Oscillator 300kHz “A version” Operates with Single 5V or 12V Supply

DAC-IC

Abstract: Non VGA Video Controller IC IEC-61000-4-2 PACVGA203 PACVGA203Q PACVGA203QR QSOP-24 schematic diagram video to vga
Contextual Info: PACVGA203 VGA Port Companion Circuit Features Product Description • • The PACVGA203 incorporates seven channels of ESD protection for all signal lines commonly found in a VGA port. ESD protection is implemented with current steering diodes designed to safely handle the high

1N4148 sod123

Abstract: 1N4148 equivalent SMD Diode Equivalent 1n4148 1N4148 SMD PACKAGE DL-41 package equivalent for ZENER DIODE 1N4148 Diode Equivalent 1n4148 bridge diode 1N4148 SMD 1N4148 DL-35 Panasonic PPS film
Contextual Info: HV9906DB3 Off-Line PFC Current Source Controller Introduction Features The Supertex HV9906DB3 demo board is a power factor corrected PFC LED driver using the HV9906 IC. A power converter of the demo board consists of an input buck-boost stage and an output buck stage.